Datasheet 2SK2645-01MR Datasheet

2SK2645-01MR

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

FAP-IIS Series

N-channel MOS-FET

600V 1,2Ω 9A 50W

>Features > Outline Drawing

-High Speed Switching

-Low On-Resistance

-No Secondary Breakdown

-Low Driving Power

-High Voltage

GS = ± 30V Guarantee

-V

-Repetitive Avalanche Rated

>Applications

-Switching Regulators

-UPS

-DC-DC converters

-General Purpose Power Amplifier

>Maximum Ratings and Characteristics > Equivalent Circuit

-Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item Symbol Rating Unit
Drain-Source-Voltage V
Continous Drain Current I
Pulsed Drain Current I
Gate-Source-Voltage V
Repetitive or Non-Repetitive (T

≤ 150°C)

ch

Avalanche Energy E
Max. Power Dissipation P
Operating and Storage Temperature Range T

T

DS
D
D(puls)
GS

I

AR
AS
D
ch
stg

-55 ~ +150 °C

600 V

9 A

32 A

±30 V

9 A

71,9 mJ

50 W

150 °C

Electrical Characteristics (T

-

=25°C), unless otherwise specified

C

Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
Gate Threshhold Voltage V
Zero Gate Voltage Drain Current I

Gate Source Leakage Current I
Drain Source On-State Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On-Time t

Turn-Off-Time t

(ton=t

on

d(on)+tr

off (ton=td(off)+tf

)

)

Avalanche Capability I
Diode Forward On-Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

(BR)DSS ID
GS(th) ID
DSS VDS

GSS VGS
DS(on) ID
fs ID
iss VDS
oss VGS
rss

t

d(on)

t

r ID

t

d(off)

t

f
AV
SD IF
rr IF=IDR
rr

=1mA VGS=0V
=1mA V

=600V Tch=25°C

V

=0V Tch=125°C

GS

=±30V VDS=0V
=4A VGS=10V
=4A VDS=25V

VCC=300V

RGS=10 Ω

L = 100µH

=2x IDR VGS=0V Tch=25°C

-dIF/dt=100A/µs Tch=25°C

DS=VGS

=25V

=0V

f=1MHz 70 110 pF

=9A

VGS=10V

=25°C

T

ch

VGS=0V

600 V

3,5 4,0 4,5 V

10 500 µA

0,2 1,0 mA

10 100 nA

1,0 1,2

2,5 5 S

900 1400 pF
150 230 pF

25 40 ns
70 110 ns
60 90 ns
35 60 ns

9 A

1,0 1,5 V

550 ns

7,0 µC

Ω

- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R

R

th(ch-a)
th(ch-c)

channel to air 62,5 °C/W
channel to case 2,5 °C/W

Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

N-channel MOS-FET

2SK2645-01MR

FAP-IIS Series

Typical Output Characteristics

Drain-Source On-State Resistance vs. T

Typical Transfer Characteristics

→

→

→

Typical Drain-Source On-State-Resistance vs. I

Typical Forward Transconductance vs. I

Gate Threshold Voltage vs. T

→

→

→

Typical Capacitances vs. V

Typical Gate Charge Characteristic

Forward Characteristics of Reverse Diode

→

→

→

Avalanche Energy Derating

Safe Operation Area

→

→

→

This specification is subject to change without notice!

600V 1,2Ω 9A 50W

> Characteristics

ID=f(VDS); 80µs pulse test; TC=25°C

R

= f(Tch); ID=4A; VGS=10V

DS(on)

ch

ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C

↑

↑

[A]

D

I

]

Ω

[

DS(ON)

R

1

VDS [V]

R

=f(ID); 80µs pulse test; TC=25°C

DS(on)

4

ID [A]

C=f(VDS); VGS=0V; f=1MHz

↑

]

Ω

[

DS(ON)

R

D

gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C

2

Tch [°C]

D

↑

[S]

fs

g

DS

5

ID [A]

VGS=f(Qg); ID=9A; Tc=25°C

↑

[A]

D

I

3

VGS [V]

V

=f(Tch); ID=1mA; VDS=V

GS(th)

ch

GS

↑

[V]

GS(th)

V

IF=f(VSD); 80µs pulse test; VGS=0V

6

Tch [°C]

↑

C [F]

7

VDS [V]

Eas=f(starting Tch); VCC=60V; IAV=9A ID=f(VDS): D=0,01, Tc=25°C

↑

[V]

DS

V

↑ 10 ↑ 12

[A]

D

I

Eas [mJ]

Starting Tch [°C]

VDS [V]

8

Qg [nC]

↑

[K/W]

th(ch-c)

Z

↑ ↑

[V]

GS

V

[A]

F

I

VSD [V]

Transient Thermal impedance

Z

=f(t) parameter:D=t/T

thch

t [s]

9