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2SK2645-01MR
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
FAP-2S Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage VDS 600
Continuous drain current ID ±9
Pulsed drain current ID(puls] ±32
Gate-source voltage VGS ±35
Repetitive or non-repetitive IAR *2 9
Maximum Avalanche Energy EAS *1 71.9
Max. power dissipation PD 50
Operating and storage Tch +150
temperature range Tstg
Absolute maximum ratings
-55 to +150
*1 L=1.63mH, Vcc=60V *2 Tch=150°C
Outline Drawings
TO-220F
Equivalent circuit schematic
V
A
A
V
A
mJ
W
°C
°C
<
Gate(G)
Drain(D)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermalcharacteristics
Item Symbol Test Conditions
Thermal resistance
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VDS=600V
VGS=0V Tch=125°C
VGS=±35V
VDS=0V
ID=4.5A VGS=10V
ID=4.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=9A
VGS=10V
RGS=10 Ω
L=100 µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
Min. Typ. Max. Units
600
3.5 4.0 4.5
10 500
0.2 1.0
10 100
1.0 1.2
2.5 5.0
900 1400
150 230
70 110
25 40
70 110
60 90
35 60
9
1.0 1.5
550
7.0
V
V
µA
mA
nA
Ω
S
pF
ns
A
V
ns
µC
Min. Typ. Max. Units
2.5
62.5
°C/W
°C/W
1
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2SK2645-01MR
Characteristics
FUJI POWER MOSFET
Power Dissipation
PD=f(Tc)
70
60
50
40
PD [W]
30
20
10
0
0 50 100 150
Tc [oC]
Typical output characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
20
15
VGS=20V
10V
8V
Safe operating area
ID=f(VDS):D=0.01,Tc=25°C
1
10
DC
0
10
ID [A]
-1
10
-2
10
10
t
t
D=
T
T
0
1
10
2
10
VDS [V]
Typical transfer characteristic
ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C
1
10
t=0.01µs
1µs
10µs
100µs
1ms
10ms
100ms
3
10
10
ID [A]
5
0
0 5 10 15 20 25 30 35
VDS [V]
Typical forward transconductance
gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C
1
10
gfs [s]
0
10
7V
6.5V
6V
5.5V
5V
0
10
ID [A]
-1
10
-2
10
012345678910
VGS [V]
Typical drain-source on-state resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
VGS=
9
5V
8
7
6
]
Ω
5
4
RDS(on) [
3
2
1
6V
7V6.5V5.5V
8V
10V
20V
-1
-1
10
10
0
10
1
10
ID [A]
0
0 5 10 15 20
ID [A]
2
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2SK2645-01MR
FUJI POWER MOSFET
Drain-source on-state resistance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
4.0
3.5
3.0
2.5
]
Ω
2.0
1.5
RDS(on) [
1.0
0.5
0.0
-50 0 50 100 150
max.
Tch [oC]
Typical gate charge characteristic
VGS=f(Qg):ID=9A,Tch=25°C
500
Vcc=480V
450
400
350
300V
300
250
VDS [V]
200
150
120V
100
50
0
0 20 40 60 80 100 120 140
Qg [nC]
typ.
Vcc=120V
300V
480V
50
45
40
35
30
25
20
15
10
5
0
VGS [V]
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0
5.0
4.0
3.0
max.
typ.
min.
VGS(th) [V]
2.0
1.0
0.0
-50 0 50 100 150
Tch [oC]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
10n
1n
C [F]
100p
10p
-2
10
-1
10
0
10
VDS [V]
Ciss
Coss
Crss
1
10
2
10
Forward characteristic of reverse of diode
IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=60V,IAV=9A
1
10
Tch=25oC typ.
0
10
Avalanche energy derating
100
80
60
IF [A]
40
Eas [mJ]
-1
10
-2
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
20
0
0 50 100 150
Starting Tch [oC]
3
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2SK2645-01MR
Transient thermal impedande
Zthch=f(t) parameter:D=t/T
1
10
D=0.5
0
10
0.2
0.1
0.05
-1
0.02
10
Zthch-c [K/W]
0.01
0
-2
10
-5
10
10
FUJI POWER MOSFET
t
t
D=
T
T
-4
10
-3
10
-2
10
-1
10
0
10
1
t [s]
4
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