Datasheet 2SK2573 Datasheet (Panasonic)

Power F-MOS FETs

2SK2573 (Tentative)

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed

●High-speed switching

●Low ON-resistance

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage Gate to Source voltage

Drain current

DC

Pulse Avalanche energy capacity Allowable power dissipation

TC = 25°C

Ta = 25°C Channel temperature Storage temperature

*

L = 0.1mH, IL = 20A, 1 pulse

Symbol

V V I

D

I

DP

EAS

P

D

T

ch

T

stg

DSS

GSS

*

= 25°C)

C

Ratings

−55 to +150

500 ±30 ±20 ±40

20

100

3

150

Unit

V V A A

mJ

W

°C °C

4.5

4.0

2.0±0.2

1.1±0.1

5.45±0.3

0.7±0.1

3.3±0.3

15.5±0.5

5˚

123

φ3.2±0.1

2.0 2.0 1.2 10.0

5.45±0.3

2.0

26.5±0.5

18.6±0.5

5.5±0.3

unit: mm

3.0±0.3

5˚ 5˚

23.4

5˚

0.7±0.1

1: Gate 2: Drain 3: Source

TOP-3E Package

22.0±0.5

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs | V

DSF

C

iss

C

oss

C

rss

t

on

t

f

t

d(off)

R

th(ch-c)

R

th(ch-a)

= 25°C)

Conditions

VDS = 400V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 10A VDS = 25V, ID = 10A IDR = 20A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VDD = 150V, ID = 10A VGS = 10V, RL = 15Ω

min

500

1

7.2

typ

0.32 12

3000

430 175 150 140 480

max

100

±1

5

0.4

−2.8

1.25

41.67

Unit

µA µA

V V

Ω

S

V pF pF pF

ns ns

ns °C/W °C/W

1

Power F-MOS FETs 2SK2573

Area of safe operation (ASO) PD  Ta IAS  L-load

2

10

I

DP

I

D

) A

(

10

D

1

Non repetitive pulse T

=25˚C

C

DC

100ms

10ms

Drain current I

–1

10

–1

10

11010210

Drain to source voltage VDS (V

I

 V

D

GS

30

VDS=25V T

=25˚C

C

25

) A

(

20

D

15

10

Drain current I

5

t=1ms

160

)

140

W

(

D

120

100

80

60

40

20

Allowable power dissipation P

PD=3.0W

3

)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

1.2

)

Ω

(

1.0

DS(on)

0.8

0.6

0.4

0.2

(1) TC=Ta (2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(1)

(2)

(3)

R

 I

DS(on)

D

TC=25˚C

=10V

V

GS

15V

)

2

10

) A

(

10

1

Avalanche current IAS

–1

10

–2

10

–1

10

L-load (mH

C

, C

iss

oss

10000

)

,

)

pF

(

rss

3000

,C

Common source

(

oss

,C

1000

iss

C

)

300

, Output capacitance

)

Common source

(

100

Common source

(

30

TC=25˚C

E=20mJ

110

)

, C

 V

rss

C

iss

DS

f=1MHz

=25˚C

T

C

oss

C

rss

0

0108264

Gate to source voltage VGS (V

| Yfs |  I

16

) S

(

14

|

fs

12

10

8

6

4

2

Forward transfer admittance |Y

0

0504010 3020

Drain current ID (A

2

D

VDS=25V T

=25˚C

C

Drain to source ON-resistance R

0

0504010 3020

)

) µs

(

d(off)

,t

f

,t

on

Switching time t

)

800

700

600

500

400

300

200

100

0

0252051510

Drain current ID (A

ton, tf, t

d(off)

Drain current ID (A

 I

t

D

VCC=150 V

GS

=25˚C

T

C

d(off)

t

on

t

f

)

=10V

)

Input capacitance

Reverse transfer capacitance

10

0 20050 150100

Drain to source voltage VDS (V

)

Power F-MOS FETs 2SK2573

R

 t

th(t)

2

10

Note: Rth was measured at Ta=25˚C

) ˚C/W

( (t)

th

10

and under natural convection. (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink

10

1

–1

Thermal resistance R

–2

10

–3

10

–2

10

–1

110

Time t (s

10 10

)

(1)

(2)

2

10

3