Page 1
Power F-MOS FETs
2SK2571
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed
●High-speed switching
●Low ON-resistance
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 2.4mH, IL = 13A, 1 pulse
Symbol
V
V
I
D
I
DP
EAS
P
D
T
ch
T
stg
DSS
GSS
*
= 25°C)
C
Ratings
−55 to +150
450
±30
±13
±26
200
100
3
150
Unit
V
V
A
A
mJ
W
°C
°C
4.5
4.0
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
3.3±0.3
15.5±0.5
5˚
123
φ3.2±0.1
2.0 2.0 1.2 10.0
5.45±0.3
2.0
26.5±0.5
18.6±0.5
5.5±0.3
unit: mm
3.0±0.3
5˚ 5˚
23.4
5˚
5˚
5˚
0.7±0.1
1: Gate
2: Drain
3: Source
TOP-3E Package
22.0±0.5
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
= 25°C)
Conditions
VDS = 360V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 7A
VDS = 25V, ID = 7A
IDR = 13A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 150V, ID = 7A
VGS = 10V, RL = 21.4Ω
min
450
2
5
typ
0.34
8
1700
300
120
110
90
220
max
100
±1
5
0.45
−2
1.25
41.67
Unit
µA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
°C/W
°C/W
1
Page 2
Power F-MOS FETs 2SK2571
Area of safe operation (ASO) PD Ta IAS L-load
2
10
I
DP
)
I
D
A
(
10
D
1
Drain current I
–1
10
–1
10
Non repetitive pulse
=25˚C
T
C
DC
100ms
10ms
11010210
Drain to source voltage VDS (V
I
V
D
30
VDS=25V
T
=25˚C
C
25
)
A
(
20
D
15
GS
t=1ms
120
)
W
(
100
D
80
60
40
20
Allowable power dissipation P
3
)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
6
)
5
V
(
th
4
3
(1) TC=Ta
(2) Without heat sink
P
=3.0W
D
(1)
(2)
Vth T
C
VDS=25V
I
=1mA
D
)
2
10
)
A
(
10
1
Avalanche current IAS
–1
10
–1
10
11010
L-load (mH
R
I
DS(on)
1.2
)
Ω
(
1.0
DS(on)
0.8
0.6
TC=25˚C
E=200mJ
)
D
TC=25˚C
2
10
Drain current I
5
0
0108264
Gate to source voltage VGS (V
VDS V
35
)
30
V
(
DS
25
20
15
10
5
Drain to source voltage V
3.25A
0
030252051510
Gate to source voltage VGS (V
GS
TC=25˚C
I
=26A
D
13A
6.5A
2
1
Gate threshold voltage V
0
0 15012510025 7550
)
Case temperature TC (˚C
20
)
S
(
|
fs
15
10
5
Forward transfer admittance |Y
0
0252051510
)
| Yfs | I
D
VDS=25V
T
C
Drain current ID (A
=25˚C
)
)
,
)
Common source
(
, Output capacitance
)
Common source
(
Input capacitance
=10V
0.4
0.2
Drain to source ON-resistance R
0
0252051510
V
GS
15V
Drain current ID (A
C
, C
, C
oss
rss
V
f=1MHz
T
=25˚C
C
iss
10000
)
pF
(
rss
3000
,C
oss
,C
1000
iss
C
)
300
Common source
(
100
30
Reverse transfer capacitance
10
0 25020050 150100
Drain to source voltage VDS (V
DS
)
C
iss
C
oss
C
rss
)
2
Page 3
Power F-MOS FETs 2SK2571
ton, tf, t
d(off)
300
)
250
ns
(
200
d(off)
,t
f
,t
on
150
100
50
Switching time t
0
020108264
Drain current ID (A
2
10
Note: Rth was measured at Ta=25˚C
)
˚C/W
(
(t)
th
and under natural convection.
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
10
1
t
d(off)
t
on
t
I
f
D
VDD=150
V
=10V
GS
=25˚C
T
C
)
VDS, VGS Q
300
)
V
250
(
DS
V
DS
200
150
100
50
Drain to source voltage V
0
0 1008020 6040
Gate charge amount Qg (nC
R
t
th(t)
g
12
ID=13A
V
GS
)
V
10
(
GS
8
6
4
2
Gate to source voltage V
0
)
(1)
(2)
–1
10
Thermal resistance R
–2
10
–3
10
–2
10
–1
110
Time t (s
10 10
10
)
2
3
3
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