Datasheet 2SK2569 Datasheet (HIT)

Silicon N-Channel MOS FET

Application

Low frequency power switching

Features

• Low on-resistance.

• R

• 2.5V gate drive device.

• Small package (MPAK).

= 2.6 max. (at VGS = 4 V, ID = 100mA)

DS(on)

2SK2569

ADE-208-384

1st. Edition

Outline

MPAK

G

3

1

2

D

1. Source

2. Gate

3. Drain

S

2SK2569

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Zero gate voltage drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

DSS

GSS

R

GS(off)

DS(on)1

resistance
Static drain to source on state

R

DS(on)2

resistance
Foward transfer admittance |yfs| 0.13 0.23 — S ID = 100 mA

Input capacitance Ciss — 14.0 — pF VDS = 10 V
Output capacitance Coss — 17.2 — pF VGS = 0
Reverse transfer capacitance Crss — 1.73 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Notes 1. Pulse Test

2. Marking is "ZN–"

50 — — V ID = 100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

— — 1.0 µAVDS = 40 V, VGS = 0
——±2.0 µAVGS = ±16 V, VDS = 0

0.5 — 1.5 V ID = 10 µA, VDS = 5 V
— 2.0 2.6 Ω ID = 100 mA

— 3.1 5.0 Ω ID = 40 mA

—40—µsVGS = 10 V, ID = 100 mA
—86—µsR
— 1120 — µs
— 430 — µs

50 V
±20 V

0.2 A

0.4 A
150 mW

= 4 V*

= 2.5 V*

= 10 V

1

1

V

GS

V

GS

V

DS

= 300 Ω

L

2

2SK2569

g

)

Maximum Channel

Dissipation Curve

200

150

100

50

Channel Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

10 V 4 V

0.20

0.16

D

2.5 V

0.12

0.08

2.3 V

2 V

Maximum Safe Operation Area

1

1 ms

PW = 10 ms

DC Operation

D

0.3

0.1

0.03

Operation in
this area is
limited by R

DS(on)

0.01

Drain Current I (A)

0.003

0.001

Ta = 25 °C

0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)

Typical Transfer Characteristics

0.20

0.16

D

0.12

25°C

Tc = 75°C

–25°C

0.08

DS

Drain Current I (A)

0.04
Pulse Test

0

246810

Drain to Source Voltage V (V)

V = 1.5 V

GS

DS

0.04

Drain Current I (A)

0

12345

Gate to Source Volta

V = 5 V

DS

Pulse Test

e V (V

GS

3

2SK2569

)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5

Pulse Test

0.4

DS(on)

I = 0.2 A

D

0.3

0.2

0.1 A

0.1

0.05 A

Drain to Source Voltage V (V)

0

246

Gate to Source Voltage V (V)

8

GS

Static Drain to Source on State Resistance

vs. Temperature

10

Ω

Pulse Test

8

DS(on)

R ( )

6

V = 2.5 V

4

2

GS

I = 0.2 A

D

0.05, 0.1 A

0.05 A

4 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C

10

0.1 A

0.2 A

Static Drain to Source on State Resistance

20

Ω

vs. Drain Current

Pulse Test

10

5

DS(on)

R ( )

V = 2.5 V

GS

2

4 V

1

0.5

Drain to Source On State Resistance

0.2

0.01 0.02 0.05 0.1 0.2 0.5 1
Drain Current I (A)

D

Forward Transfer Admittance vs.

0.5

0.2

0.1

Drain Current

Tc = –25 °C

25 °C

0.05
75 °C

0.02

0.01

Forward Transfer Admittance |yfs| (S)

0.005

0.001 0.003 0.01 0.03 0.1 0.3 1

Drain Current I (A)

V = 10 V

DS

Pulse Test

D

4

100

30

10

Typical Capacitance vs.
Drain to Source Voltage

Ciss

Coss

0.5

2SK2569

2

1

Switching Characteristics

t

d(off)

t

f

3

1

Crss

Capacitance C (pF)

0.3

V = 0

GS

f = 1 MHz

0.1
0 10 20304050

Drain to Source Voltage V (V)

DS

Reverse Drain Current vs.

Source to Drain Voltage

0.20

0.16

DR

0.12

0.08

0.04

Reverse Drain Current I (A)

Pulse Test

0

0.2 0.4 0.6 0.8 1.0

Source to Drain Voltage V (V)

–5 V

Switching Time t (µs)

V = 0

GS

0.2
t

r

0.1

V = 10 V

GS

0.05

V = 30 V

DD

t

d(on)

PW = 5 µs
duty < 1 %

0.02

0.01 0.02 0.05 0.1 0.2 0.5
Drain Current I (A)

SD

D

1

5

2SK2569

Avalanche Test Circuit and Waveform

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

6

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

+ 0.2

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

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