Datasheet 2SK2554 Datasheet (HIT)

2SK2554

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• R

• High speed switching

• 4 V gate drive device can be driven from 5 V source

= 4.5 mΩ typ.

DS(on)

ADE-208-359 D

5th. Edition

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK2554

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current IDR*
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

1

*

2

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V
±20 V
75 A
300 A
75 A
50 A
214 mJ
150 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs|5080—SI

Input capacitance Ciss — 7700 — pF VDS = 10 V
Output capacitance Coss — 4100 — pF VGS = 0
Reverse transfer capacitance Crss — 760 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse Test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 100 µAVDS = 60 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 4.5 6 mΩ ID = 40 A

V

= 10 V*

GS

— 5.8 10 mΩ ID = 40 A

V

= 4 V*

GS

= 40 A

D

V

= 10 V*

DS

1

1

1

— 60 — ns ID = 40 A
— 420 — ns VGS = 10 V
— 1200 — ns RL = 0.75 Ω
— 900 — ns
— 0.95 — V IF = 75 A, VGS = 0

— 105 — ns IF = 75 A, VGS = 0

diF / dt = 50 A / µs

2SK2554

3

2SK2554

200

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10 V

100

5 V
4 V

80

D

60

3 V

Pulse Test

500

Maximum Safe Operation Area

200
100

D

50
20

Operation in

10

this area is
limited by R

5

DS(on)

Drain Current I (A)

2
1

Ta = 25 °C

0.5

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

100

V = 10 V

DS

Pulse Test

80

D

60

10 µs

100 µs

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

3

10

1 ms

30

DS

100

40

Drain Current I (A)

20

0

246810

Drain to Source Voltage V (V)

2.5 V

V = 2 V

GS

DS

40

25°C

–25°C

0

Tc = 75°C

12345

Drain Current I (A)

20

Gate to Source Voltage V (V)

GS

4

2SK2554

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5

0.4

DS(on)

Pulse Test

0.3
I = 50 A

D

0.2

0.1

Drain to Source Voltage V (V)

0

24

Gate to Source Voltage V (V)

6

810

GS

Static Drain to Source on State Resistance

vs. Temperature

0.02

Ω

DS(on)

R ( )

0.016

0.012

0.008

Pulse Test

V = 4 V

GS

I = 50 A

D

20 A
10 A

10, 20 A

Static Drain to Source on State Resistance

vs. Drain Current

0.5

Ω

0.2

0.1

0.05

DS(on)

R ( )

0.02

0.01

0.005

0.002

0.001

Drain to Source On State Resistance

0.0005

1 10 100 1000

3

V = 4 V

GS

30 300

Drain Current I (A)

Pulse Test

10 V

D

Forward Transfer Admittance vs.

Drain Current

500

V = 10 V

200

DS

Pulse Test

100

50

Tc = –25 °C

20
10

5

75 °C

25 °C

0.004

10 V

0

10, 20, 50 A

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

2
1

Forward Transfer Admittance |yfs| (S)

0.5

0.1

0.3 1 3 10 30 100
Drain Current I (A)

D

5

2SK2554

Body to Drain Diode Reverse

Recovery Time

500

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

100

I = 75 A

D

80

DS

60

V

DS

V = 10 V

DD

25 V
50 V

20

16

12

100000

30000

10000

3000

1000

Capacitance C (pF)

300

V = 0
f = 1 MHz

100

01020304050

Drain to Source Voltage V (V)

10000

3000

GS

1000

300

Typical Capacitance vs.
Drain to Source Voltage

GS

Switching Characteristics

t

d(off)

t

f

t

r

Ciss

Coss

Crss

DS

40

20

V = 50 V

DD

Drain to Source Voltage V (V)

0

80 160 240 320 400

V

25 V
10 V

Gate Charge Qg (nc)

GS

8

100

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

30

V = 10 V, V = 30 V

GS

PW = 5 µs, duty < 1 %

10

0.1 0.3 1 3 10 30 100
Drain Current I (A)

DD

t

d(on)

D

6

2SK2554

Reverse Drain Current vs.

Source to Drain Voltage

200

160

DR

10 V

120

5 V

80

V = 0, –5 V

GS

40

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

Pulse Test

SD

Maximun Avalanche Energy vs.

Channel Temperature Derating

250

I = 50 A

AP

AR

200

V = 25 V

DD

duty < 0.1 %
Rg > 50

150

100

50

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Tc = 25°C

Ω

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 0.83 °C/W, Tc = 25 °C

P

DM

PW

T

D =

100 m 1 10

PW

T

7

2SK2554

Vin
15 V

Switching Time Test Circuit Waveform

V

DS

Monitor

Rg

50Ω

Avalanche Test Circuit and Waveform

AR

1
2

L

E = • L • I •

I

AP

Monitor

I

AP

D. U. T

V

DD

V

DD

0

V

2

AP

I

D

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

8

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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