Datasheet 2SK2529 Datasheet (HIT)

2SK2529

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• R

• High speed switching

• 4 V gate drive device can be driven from 5 V source

= 7 mΩ typ.

DS(on)

ADE-208-356F

7th. Edition

Outline

TO-220CFM

G

D

S

1

2

3

1. Gate

2. Drain

3. Source

2SK2529

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V
±20 V
50 A
200 A
50 A
45 A
174 mJ
35 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs|3555—SI

Input capacitance Ciss — 3550 — pF VDS = 10 V
Output capacitance Coss — 1760 — pF VGS = 0
Reverse transfer capacitance Crss — 500 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 60 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 7 10 mΩ ID = 25 A

V

= 10 V*

GS

—1016mΩI

= 25 A

D

V

= 4 V*

GS

= 25 A

D

V

= 10 V*

DS

1

1

1

— 35 — ns ID = 25 A
— 230 — ns VGS = 10 V
— 470 — ns RL = 1.2 Ω
— 360 — ns
— 0.85 — V IF = 50 A, VGS = 0

— 135 — ns IF = 50 A, VGS = 0

di

/ dt = 50 A / µs

F

2SK2529

3

2SK2529

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10 V

100

6 V

5 V

80

4 V

Pulse Test

3.5 V

500

Maximum Safe Operation Area

200
100

D

50
20

10

Operation in
this area is

5

Drain Current I (A)

limited by R

DS(on)

2
1

Ta = 25 °C

0.5

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

100

V = 10 V

DS

Pulse Test

80

10 µs

100 µs

PW = 10 ms (1shot)

1 ms

DC Operation (Tc = 25°C)

3

10

30

DS

100

D

60

40

Drain Current I (A)

20

0

246810

Drain to Source Voltage V (V)

3 V

V = 2.5 V

GS

DS

D

60

40

Tc = 75°C

Drain Current I (A)

20

0

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

4

2SK2529

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0

0.8

DS(on)

Pulse Test

0.6

I = 50 A

0.4

0.2

D

20 A
10 A

Drain to Source Voltage V (V)

0

24

Gate to Source Voltage V (V)

6

810

GS

Static Drain to Source on State Resistance

vs. Temperature

0.04

Ω

DS(on)

R ( )

0.032

0.024

0.016

0.008

Pulse Test

V = 4 V

GS

I = 50 A

D

10, 20, 50 A

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

10, 20 A

Static Drain to Source on State Resistance

vs. Drain Current

0.5

Ω

0.2

0.1

0.05

DS(on)

R ( )

0.02

0.01

0.005

0.002

0.001

Drain to Source On State Resistance

0.0005

1 10 100 1000

3

V = 4 V

GS

10 V

30 300

Drain Current I (A)

Pulse Test

D

Forward Transfer Admittance vs.

Drain Current

500

V = 10 V

200

DS

Pulse Test

100

50

Tc = –25 °C

20
10

5

75 °C

25 °C

2
1

Forward Transfer Admittance |yfs| (S)

0.5

0.1

0.3 1 3 10 30 100
Drain Current I (A)

D

5

2SK2529

Body to Drain Diode Reverse

Recovery Time

5000
2000

1000

500
200

100

50
20

10

Reverse Recovery Time trr (ns)

5

0.3 1 3 10 30 100

0.1

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

Reverse Drain Current I (A)

Dynamic Input Characteristics

100

I = 50 A

D

80

DS

V = 10 V

DD

60

V

DS

25 V
50 V

40

20

Drain to Source Voltage V (V)

0

40 80 120 160 200

V = 50 V

DD

25 V
10 V

Gate Charge Qg (nc)

V

DR

GS

Typical Capacitance vs.

Drain to Source Voltage

10000

5000

2000

1000

500

Capacitance C (pF)

200

V = 0

GS

f = 1 MHz

100

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

5000
2000

GS

1000

16

500

12

200
100

8

4

50

Switching Time t (ns)

20
10

Gate to Source Voltage V (V)

0

5

0.1

0.3 1 3 10 30 100
Drain Current I (A)

Ciss

Coss

Crss

DS

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

D

6

2SK2529

Reverse Drain Current vs.

Source to Drain Voltage

100

80

DR

10 V

60

40

5 V

V = 0, –5 V

GS

20

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

Pulse Test

SD

Maximun Avalanche Energy vs.

Channel Temperature Derating

200

I = 45 A

AP

AR

160

V = 25 V

DD

duty < 0.1 %
Rg > 50

Ω

120

80

40

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Tc = 25°C

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Pulse Width PW (S)

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 3.57 °C/W, Tc = 25 °C

P

DM

PW
T

D =

100 m 1 10

PW

T

7

2SK2529

Vin
15 V

Switching Time Test Circuit Waveform

V

DS

Monitor

Rg

50Ω

Avalanche Test Circuit and Waveform

AR

1
2

L

E = • L • I •

I

AP

Monitor

I

AP

D. U. T

V

DD

V

DD

0

V

2

AP

I

D

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

8

Unit: mm

1.0 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

10.0 ± 0.3

2.542.54

φ

3.2 ± 0.2

12.0 ± 0.3

2.5 ± 0.2

4.1 ± 0.3

4.5 ± 0.3

2.7 ± 0.2

15.0 ± 0.3

13.60 ± 1.0

0.7 ± 0.1

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-220CFM
—
—

1.9 g

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