Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2476 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
2SK2476
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 590 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±3.0 A
Drain Current (pulse)* ID(pulse) ±9.0 A
Total Power Dissipation (Tc = 25 ˚C) PT1 40 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 37.8 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
A = 25 ˚C) PT2 2.0 W
VDSS 800 V
GSS ±30 V
AS 3.0 A
10.0±0.3 4.5±0.2
15.0±0.3
0.7±0.1
2.54
123
MP-45F (ISOLATED TO-220)
3.2±0.2
3±0.14±0.2
1.5±0.2
2.54
Drain
2.7±0.2
12.0±0.213.5MIN.
2.5±0.11.3±0.2
0.65±0.1
1. Gate
2. Drain
3. Source
Document No. D10268EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1995
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2476
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 3.4 5.0 VGS = 10 V, ID = 2.0 A
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 1.0 VDS = 20 V, ID = 2.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 590 VDS = 10 V
Output Capacitance Coss 100 VGS = 0
Reverse Transfer Capacitance Crss 20 f = 1 MHz
Turn-On Delay Time td (on) 15 ID = 2.0 A
Rise Time tr 5 VGS = 10 V
Turn-Off Delay Time td (off) 45 VDD = 150 V
Fall Time tf 7 R
Total Gate Charge QG 20 ID = 3.0 A
Gate to Source Charge QGS 5 VDD = 450 V
Gate to Drain Charge QGD 10 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 3.0 A, VGS = 0
Reverse Recovery Time trr 510 IF = 3.0 A, VGS = 0
Reverse Recovery Charge Qrr 2.2 di/dt = 50 A/µs
UNIT
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
= 10 Ω
G
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
G = 2 mA
PG.
I
50 Ω
RL
VDD
VDS
Test Circuit 2 Switching Time
L
V
DD
PG.
RG
G = 10 Ω
R
R
VDD
L
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
D.U.T.
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2476
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
= 10 V)
GS
ID(DC)
Power Dissipation Limited
1
ID - Drain Current - A
Limited (at V
DS(on)
R
ID(pulse)
100 ms
PW = 10 s
1 ms
10 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
PT - Total Power Dissipation - W
0
20
40 60 80 100 120 140 160
T
C - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10
VGS = 20 V
µ
5
10 V
8 V
6 V
ID - Drain Current - A
TC = 25 ˚C
Single Pulse
0.1
1
10 100 1000
V
DS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
100
TA = –25 ˚C
10
25 ˚C
75 ˚C
125 ˚C
1.0
ID - Drain Current - A
0.1
0
51015
GS - Gate to Source Volta
V
e - V
Pulsed
VDS = 10 V
0
10
V
DS - Drain to Source Voltage - V
20
30
40
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Page 4
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R
th(ch-a)
2SK2476
= 62.5(˚C/W)
10
1
0.1
- Transient Thermal Resistance - ˚C/W
0.01
th(t)
r
0.001
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
TA = –25˚C
1
25˚C
75˚C
125˚C
0.1
R
th(ch-c)
= 3.13(˚C/W)
Single Pulse
c
= 25 ˚C
T
µµ
1 m 10 m 100 m 1 10 100 1 000 10
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
DS
= 20 V
Pulsed
Pulsed
10
ID = 3 A
5
1.5 A
0.6 A
| - Forward Transfer Admittance - S
fs
0.01
| y
1
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
I
D
- Drain Current - A
10
5
- Drain to Source On-State Resistance - Ω
DS(on)
R
0
1.0
ID - Drain Current - A
10 100
1.0 10
Pulsed
V
GS
= 10 V
- Drain to Source On-State Resistance - Ω
0
DS(on)
R
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
10
V
GS
- Gate to Source Voltage - V
5
- Gate to Source Cutoff Voltage - V
GS(off)
0
V
–50
T
0 50 100 150
ch
- Channel Temperature - ˚C
20 30
VDS = 10 V
I
D
= 1 mA
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2SK2476
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
0
–50
RDS(on) - Drain to Source On-State Resistance - Ω
0
ch - Channel Temperature - ˚C
T
50
100 150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
1 000
100
V
GS = 10 V
I
D = 2 A
VGS = 0
f = 1 MHz
Ciss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
VGS = 10 V
0.1
ISD - Diode Forward Current - A
0
0.5
V
SD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
100
10
VGS = 0
1.0
Pulsed
1.5
tr
td(off)
tf
td(on)
Ciss, Coss, Crss - Capacitance - pF
10
1.0
10 100 1 000
V
DS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
10 000
1 000
100
trr - Reverse Recovery time - ns
10
0.1
1.0 10 100
I
D - Drain Current - A
Crss
Coss
di/dt = 50 A/ s
GS = 0
V
µ
td(on), tr, td(off), tf - Switching Time - ns
1.0
0.1
1.0 10 100
I
D - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
14
12
VDD = 150 V
10
300 V
450 V
8
6
4
2
VGS - Gate to Source Voltage - V
0
10 20 30
Q
g - Gate Charge - nC
DD = 150 V
V
VGS = 10 V
RG = 10 Ω
I
D = 3.0 A
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2SK2476
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
10
IAS = 3.0 A
1.0
0.1
VDD = 150 V
VGS = 20 V
IAS - Single Avalanche Current - A
G = 25 Ω
R
100
µ
→ 0
1 m 10 m 100 m
L - Inductive Load - H
E
AS
= 37.8 mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
140
120
100
80
60
40
Energy Derating Factor - %
20
0
50 75 100 125 150
25
Starting T
ch - Starting Channel Temperature - ˚C
VDD = 150 V
R
G
= 25 Ω
V
GS
= 20 V → 0
I
AS
≤ 3.0A
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2SK2476
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
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2SK2476
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8
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