Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2410 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
2SK2410
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
DS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
R
• Low Ciss Ciss = 1500 pF TYP.
• High Avalanche Capability Ratings
• Built-in G-S Gate Protection Diodes
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) I
Drain Current (pulse)* ID(pulse) ±120 A
Total Power Dissipation (Tc = 25 ˚C) PT1 35 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 90 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
A = 25 ˚C) PT2 2.0 W
D(DC) ±30 A
AS 30 A
15.0 ±0.3
0.7 ±0.1
10.0 ±0.3
3.2 ±0.2
3 ±0.1
4 ±0.2
1.3 ±0.2
1.5 ±0.2
2.542.54
123
MP-45F(ISOLATED TO-220)
Gate
Gate Protection
Diode
4.5 ±0.2
12.0 ±0.2
MIN.
13.5
0.65 ±0.1
1. Gate
2. Drain
3. Source
Drain
Body
Diode
Source
2.7 ±0.2
2.5 ±0.1
Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2410
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS(on)1 31 40 VGS = 10 V, ID = 15 A
Drain to Source On-Resistance RDS(on)2 40 60 VGS = 4 V, ID = 15 A
Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 15 27 VDS = 10 V, ID = 15 A
Drain Leakage Current IDSS 10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 1500 VDS = 10 V
Output Capacitance Coss 720 VGS = 0
Reverse Transfer Capacitance Crss 190 f = 1 MHz
Turn-On Delay Time td(on) 22 ID = 15 A
Rise Time tr 260 VGS(on) = 10 V
Turn-Off Delay Time td(off) 130 VDD = 30 V
Fall Time tf 150 RG = 10 Ω
Total Gate Charge QG 50 ID = 30 A
Gate to Source Charge QGS 5.0 VDD = 48 V
Gate to Drain Charge QGD 15 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.1 IF = 30 A, VGS = 0
Reverse Recovery Time trr 110 IF = 30 A, VGS = 0
Reverse Recovery Charge Qrr 320 di/dt = 100 A/µs
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
V
GS
= 20 → 0 V
PG
R
V
DD
G
= 25 Ω
50 Ω
I
D
D.U.T.
I
AS
BV
DSS
V
Starting T
L
DD
V
PG.
V
GS
0
DS
t
µ
t = 1 s
Duty Cycle ≤ 1 %
ch
R
G
= 10 Ω
D.U.T.
R
G
Test Circuit 3 Gate Charge
PG.
I
G
= 2 mA
50 Ω
D.U.T.
R
L
V
DD
L
R
V
DD
V
GS
Wave
Form
I
D
Wave
Form
V
I
GS
0
D
10 %
10 %
0
t
d (on)
90 %
t
on
90 %
V
GS (on)
90 %
I
D
10 %
t
d (off)
t
t
r
f
t
off
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2410
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160
50
40
30
20
10
PT - Total Power Disslipation - W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
Tc - Case Temperature - ˚C Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
FORWARD BIAS SAFE OPERATING AREA
1000 100
PW = 10 s
100
10
LImited
ID (DC)
= 10 V)
DS(on)
GS
R
Power Dissipation Limited
(at V
ID(pulse)
10 ms
200 ms
DC
10 s
1 ms
µ
µ
ID - Drain Current - A
c = 25 ˚C
T
Single Pulse
1
0.1 1 10 100 2 4 6 8 10 12
90
80
70
60
50
40
30
ID - Drain Current - A
20
10
0
DRAIN TO SOURCE VOLTAGE
GS = 10 V
V
VGS = 6 V
VGS = 4 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
1000
100
ID - Drain Current - A
10
0
VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V
Pulsed
V
DS = 10 V
TA = –25 ˚C
25 ˚C
125 ˚C
51015
VGS - Drain to Source Voltage - V
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Page 4
1000
100
2SK2410
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
1
0.1
rth (t) - Transient Thermal Resistance - ˚C/W
0.01
µµ
10 100 1 m 10 m 100 m 1 10 100 1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1000
TA = –25 ˚C
25 ˚C
100
75 ˚C
125 ˚C
10
VDS = 10 V
Pulsed
Rth (ch - a) = 62.5 ˚C/W
Rth (ch - c) = 3.57 ˚C/W
Single Pulse
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
50
40
30
ID = 15 A
20
10
lyfsl - Forward Transfer Admittance - S
1
1 10 100 5 1015 2025
I
D - Drain Current - A VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60
Pulsed
50
40
30
VGS = 4 V
VGS = 10 V
0
DS(on) - Drain to Source On-State Resistance - mΩ
R
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 10 V
I
D = 1mA
1.5
1.0
20
0.5
10
GS(off) - Gate to Source Cutoff Voltage - V
0
RDS(on) - Drain to Source On-State Resistance - mΩ
1 10 100 –50 –25 0 25 50 75 100 125 150
I
D - Drain Current - A Tch - Channel Temperature - ˚C
V
0
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2SK2410
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
70
60
50
40
30
VGS = 4 V
VGS = 10 V
100
10
10 V
V
GS = 0
20
10
0
–50 0 50 100 150 0 0.5 1.0 1.5 2.0
RDS(on) - Drain to Source On-State Resistance - mΩ
ID = 15 A
Tch - Channel Temperature - ˚C V
SD - Diode Forward Current - A
I
1
SD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SWITCHING CHARACTERISTICS
10000
SOURCE VOLTAGE
VGS = 0
1000
f = 1 MHz
1000
100
Ciss
100
Coss
Crss
10
t
d(off)
tf
tr
td(on)
Pulsed
Ciss, Coss, Crss - Capacitance - pF
10
1
DS - Drain to Source Voltage - V
V
10 100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
di/dt = 50 A/ s
V
GS = 0
µ
100
trr - Reverse Recovery time - ns
10
0.1 0
1.0 10 100
ID - Drain Current - A Qg - Gate Charge - nC
td(on), tr, td(off), tf - Switching Time - ns
1.0
0.1
1.0 10 100
ID - Drain Current - A
DYANMIC INPUT/OUTPUT CHARACTERISTICS
80
70
60
50
VDD = 48 V
40
30
VDS
20
DS - Drain to Source Voltage - V
10
V
10 20 30 40 50 60 70 80
VDD = 30 V
V
GS = 10 V
R
G = 10 Ω
ID = 30 A
V
GS
16
14
12
10
8
6
4
2
VGS - Gate to Source Voltage - V
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Page 6
2SK2410
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 30 A
10
VDD = 30 V
GS = 20 V → 0
V
IAS - Single Avalanche Energy -mJ
R
G = 25 Ω
1.0
10
µ
100
µ
L - Inductive Load - H Starting Tch - Starting Channel Temperature - ˚C
E
AS
= 90 mJ
1m 10m
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
80
60
40
20
dt - Energy Derating Factor - %
0
25
50 75 100 125 150
VDD = 30 V
G = 25 Ω
R
V
GS = 20 V → 0
I
AS ≤ 30 A
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2SK2410
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
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[MEMO]
2SK2410
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard:Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
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