Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
2SK2409
DESCRIPTION
The 2SK2409 is N-Channel MOS Field Effect Transistor de-
signed for solenoid, motor, and lamp driver.
FEATURES
• Low On-Resistance
RDS(on) ≤ 27 mΩ (VGS = 10 V, ID = 20 A)
DS(on) ≤ 40 mΩ (VGS = 4 V, ID = 20 A)
R
• Low Ciss Ciss = 2040 pF TYP.
• Built-in Gate Protection Diode
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Device”
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±40 A
Drain Current (pulse) I
Total Power Dissipation (Ta = 25 ˚C) PT1 2.0 W
Total Power Dissipation (Tc = 25 ˚C) PT2 35 W
Channel Temperature T
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current IAS** 40 A
Single Avalanche Energy E
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
D(pulse)* ±160 A
ch 150 ˚C
AS** 160 mJ
PACKAGE DIMENSION
(in millimeters)
10.0 ±0.3
15.0 ±0.3
0.7 ±0.1 1.3 ±0.2
2.54 2.54
123
MP-45F (ISOLATED TO-220)
Gate
Gate Protection
Diode
3.2 ±0.2
3 ±0.1
4 ±0.2
1.5 ±0.2
Drain
Source
4.5 ±0.2
12.0 ±0.2
13.5 MIN.
0.65 ±0.1
1.
Gate
2.
Drain
3.
Source
Body
Diode
2.7 ±0.2
2.5 ±0.1
Document No. TC-2489
(O. D. No. TC-8028)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
Page 2
ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C)
2SK2409
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-State Resistance RDS(on)1 22 27 VGS = 10 V, ID = 20 A
Drain to Source On-State Resistance RDS(on)2 30 40 VGS = 4 V, ID = 20 A
Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 20 35 VDS = 10 V, ID = 20 A
Drain Cutoff Current IDSS 10 VDS = 60 V, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 2040 VDS = 10 V
Output Capacitance Coss 1080 VGS = 0
Reverse Transfer Capacitance Crss 300 f = 1 MHz
Turn-On Delay Time td(on) 30 ID = 20 A
Rise Time tr 350 VGS(on) = 10 V
Turn-Off Delay Time td(off) 210 VDD = 30 V
Fall Time tf 260 R
Total Gate Charge QG 72 ID = 40 A
Gate to Source Charge QGS 6.0 VDD = 48 V
Gate to Drain Charge QGD 24 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.1 IF = 40 A, VGS = 0
Reverse Recovery Time trr 110 IF = 40 A, VGS = 0
Reverse Recovery Charge Qrr 360 di/dt = 100 A/µs
UNIT
mΩ
mΩ
V
S
µ
A
µ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
= 10 Ω
G
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
V
GS
= 20 0 V→
PG
R
G
= 25 Ω
V
DD
50 Ω
I
D
DUT
I
AS
BV
DSS
V
Starting T
L
V
DD
PG.
V
GS
0
DS
ch
t
t = 1 s
µ
Duty Cycle ≤ 1%
R
G
= 10 Ω
DUT
R
G
Test Circuit 3 Gate Charge
DUT
G = 2 mA
PG.
I
50 Ω
RL
VDD
V
V
GS
Wave
Form
D
I
Wave
Form
GS
0
I
D
0
10 %
10 %
t
d (on)tr
t
on
90 %
V
GS(on)
I
D
t
d (off)tf
t
off
90 %
90 %
10 %
R
L
V
DD
2
Page 3
TYPICAL CHARACTERISTICS (Ta = 25 ˚C)
2SK2409
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
PW = 10 s
100
10
ID - Drain Current - A
Limited
DS(on)
R
(at V
= 10 V)
GS
ID(DC)
Power Dissipation Limited
ID(pulse)
200 ms
DC
1 ms
10 ms
100 s
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulsed
100
µ
80
60
40
ID - Drain Current - A
VGS = 6 V
VGS = 4 V
TC = 25 ˚C
Single Pulse
1
0.1 100
110
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
100
10
ID - Drain Current - A
1
0
Ta = –25 ˚C
25 ˚C
125 ˚C
510
VGS - Gate to Source Voltage - V
20
0481216
VDS - Drain to Source Voltage - V
Pulsed
VDS=10 V
3
Page 4
2SK2409
1000
100
1000
100
10
1
0.1
0.01
rth(t) - Transient Thermal Resistance - ˚C/W
0.001
10 100 1 m 10 m 100 m 1 10 100 1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Ta = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
µµ
VDS = 10 V
Pulsed
PW - Pulse Width - s
60
50
40
Rth (ch-a) = 62.5 ˚C/W
Rth (ch-c) = 3.75 ˚C/W
Single Pulse
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
10
IyfsI - Forward Transfer Admittance - S
1
1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
60
50
40
30
20
10
0
RDS (on) - Drain to Source On-State Resistance - mΩ
VGS = 4 V
VGS = 10 V
1 100
ID - Drain Current - A
10 100
10 50
Pulsed
30
20
10
010
RDS (on) - Drain to Source On-State Resistance - mΩ
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
1.5
1.0
0.5
VGS (off) - Gate to Source Cutoff Voltage - V
0
–50 0
ID = 20 A
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - ˚C
20 30
VDS = 10 V
ID = 1 mA
100 150
4
Page 5
2SK2409
g
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
60
40
VGS = 4 V
VGS = 10 V
20
0
–50
RDS (on) - Drain to Source On-State Resistance - mΩ
0 50 100 150
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
1000
Coss
ID = 20 A
VGS = 0
f = 1 MHz
Ciss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
10 V
10
ISD - Diode Forward Current - A
1
VGS = 0
0 1.0
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1000
100
tf
Pulsed
2.0 3.0
td(off)
tr
100
Ciss, Coss, Crss - Capacitance - pF
10
1
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
100
trr - Reverse Recovery time - ns
10
0.1
1.0
ID - Drain Current - A
Crss
10
di/dt = 50 A/ s
V
10 100
GS = 0
µ
100
10
td(on)
VDD = 30 V
td(on), tr, td(off), tf - Switching Time - ns
1.0
VGS = 10 V
RG = 10 Ω
0.1 1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
D = 40 A
I
VDD = 48 V
60
VDS
40
20
VDS - Drain to Source Voltage - V
0
20
Q
40 60 80
- Gate Change - nC
VGS
16
14
12
10
8
6
4
VGS - Gate to Source Voltage - V
2
5
Page 6
2SK2409
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 40 V
10
1.0
VDD = 30 V
VGS = 20 V → 0
IAS - Single Avalanche Energy - mJ
RG = 25 Ω
10
µ
100
µ
L - Inductive Load - H
E
AS
= 160 mJ
1 m 10 m
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
80
60
40
20
dt- Energy Derating Factor - %
0
25 75
50 125
Stating Tch - Starting Channel Temperature - ˚C
100 150
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0
IAS ≤ 40 A
6
Page 7
2SK2409
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
7
Page 8
[MEMO]
2SK2409
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear
reactor control systems and life support systems. If customers intend to use NEC devices for above applications
or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact
our sales people in advance.
Application examples recommended by NEC Corporation
Standard:Computer, Office equipment, Communication equipment, Test and Measurement equipment,
Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc.
Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime
systems, etc.
M4 92.6
Loading...