Page 1
2SK2397-01MR
N-channel MOS-FET
FAP-II Series 800V 2,3Ω 5A 50W
> Features > Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
Drain-Gate-Voltage(RGS=20KΩ)
Continous Drain Current I
Pulsed Drain Current I
Gate-Source-Voltage V
Max. Power Dissipation P
Operating and Storage Temperature Range T
V
T
DS
DGR
D
D(puls)
GS
D
ch
stg
-55 ~ +150 °C
800 V
800 V
5 A
20 A
±30 V
50 W
150 °C
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
Gate Threshhold Voltage V
Zero Gate Voltage Drain Current I
Gate Source Leakage Current I
Drain Source On-State Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On-Time ton (ton=t
Turn-Off-Time t
off (ton=td(off)+tf
d(on)+tr
)
)
Avalanche Capability I
Diode Forward On-Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
(BR)DSSID
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
t
d(on)
t
r
t
d(off)
t
f
AV
SD
rr
rr
=1mA VGS=0V
ID=1mA V
DS=VGS
VDS=800V Tch=25°C
VGS=0V Tch=125°C
VGS=±30V VGS=0V
ID=2,5A VGS=10V
ID=2,5A VDS=25V
VDS=25V
VGS=0V
f=1MHz 60 90 pF
VCC=600V
ID=5A
VGS=10V
RGS=25 Ω
L=100µH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
800 V
2,5 4,0 5,0 V
10 500 µA
0,2 1,0 mA
10 100 nA
1,7 2,3
1,8 3,5 S
800 1200 pF
120 180 pF
25 40 ns
100 150 ns
130 200 ns
70 110 ns
5 A
1,0 1,5 V
700 ns
15,0 µC
Ω
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
R
th(ch-a)
th(ch-c)
channel to air 62,5 °C/W
channel to case 2,5 °C/W
Page 2
N-channel MOS-FET
2SK2397-01MR
2,3Ω
FAP-II Series
Typical Output Characteristics
Drain-Source On-State Resistance vs. T
Typical Transfer Characteristics
→
→
→
Typical Drain-Source On-State-Resistance vs. I
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T
→
→
→
Typical Capacitances vs. V
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
→
→
→
Power Dissipation
Safe Operation Area
→
→
→
This specification is subject to change without notice!
800V
> Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
5A 50W
R
= f(Tch); ID=2,5A; VGS=10V
DS(on)
ch
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
↑
[A]
D
I
]
Ω
[
DS(ON)
R
1
VDS [V]
R
=f(ID); 80µs pulse test; TC=25°C
DS(on)
4
ID [A]
C=f(VDS); VGS=0V; f=1MHz
↑
]
Ω
[
DS(ON)
R
D
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
2
Tch [°C]
D
↑
[S]
fs
g
DS
5
ID [A]
VGS=f(Qg); ID=5A; Tc=25°C
↑
[A]
D
I
3
VGS [V]
V
=f(Tch); ID=1mA; VDS=V
GS(th)
ch
GS
↑
[V]
GS(th)
V
IF=f(VSD); 80µs pulse test; VGS=0V
6
Tch [°C]
↑
7
C [nF]
VDS [V]
PD=f(Tc) ID=f(VDS): D=0,01, Tc=25°C
↑
[V]
DS
V
↑ 10 ↑ 12
[W]
D
P
Tch [°C]
[A]
D
I
VDS [V]
8
Qg [nC]
↑
[K/W]
th(ch-c)
Z
↑ ↑
[V]
GS
V
[A]
F
I
VSD [V]
Transient Thermal impedance
Z
=f(t) parameter:D=t/T
thch
t [s]
9
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