Page 1
Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed
●High-speed switching
●Low ON-resistance
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
Allowable power
dissipation
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
*
L = 3.6mH, IL = 5A, 1 pulse
Symbol
V
V
I
D
I
DP
EAS
P
D
T
ch
T
stg
DSS
GSS
*
= 25°C)
C
Ratings
−55 to +150
900
±30
±5
±10
45
50
2
150
Unit
V
V
A
A
mJ
W
°C
°C
φ3.2±0.1
15.0±0.313.7
–0.2
+0.5
8.0±0.2
4.1±0.2
Solder Dip
7
9.9±0.3
231
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
unit: mm
4.6±0.2
2.9±0.2
2.6±0.1
0.7±0.1
1: Gate
2: Drain
3: Source
TO-220E Package
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
= 25°C)
Conditions
VDS = 720V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 3A
VDS = 25V, ID = 3A
IDR = 5A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VDD = 200V, ID = 3A
VGS = 10V, RL = 66.6Ω
min
900
2
1.5
typ
2
3.5
1400
140
60
30
60
60
170
max
100
±1
5
2.8
−1.6
2.5
62.5
Unit
µA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
°C/W
1
Page 2
Power F-MOS FETs 2SK2340
Area of safe operation (ASO) PD Ta IAS L-load
100
I
DP
10
)
I
A
D
(
D
1
Non repetitive pulse
=25˚C
T
C
t=100ms
1ms
10ms
60
)
W
(
50
D
40
30
(1) TC=Ta
(2) Without heat sink
=2W)
(P
D
(1)
100
30
)
A
(
10
3
TC=25˚C
45mJ
Drain current I
0.1
0.01
1 10 100 1000
Drain to source voltage VDS (V
I
V
D
GS
10
8
)
A
(
D
6
4
Drain current I
2
0
01234567
Gate to source voltage VGS (V
DC
VDS=25V
=25˚C
T
C
20
10
Allowable power dissipation P
0
020
)
)
Ambient temperature Ta (˚C
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
Case temperature TC (˚C
(2)
40 60 80 100 120 140 160
)
Vth T
C
VDS=25V
=1mA
I
D
)
1
Avalanche current IAS
0.3
0.1
0.1 10.3 3 10
L-load (mH
VDS V
50
)
V
(
40
DS
30
20
10
)
GS
Drain to source voltage V
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V
TC=25˚C
ID=10A
5A
2.5A
)
R
I
DS(on)
6
)
Ω
(
5
DS(on)
4
3
V
=10V
2
1
Drain to source ON-resistance R
0
0108264
GS
15V
Drain current ID (A
2
D
TC=25˚C
)
| Yfs | I
6
)
S
(
5
|
fs
4
3
2
1
D
Forward transfer admittance |Y
0
24681357
0
Drain current ID (A
VDS=25V
T
=25˚C
C
)
C
, C
, C
iss
oss
10000
)
,
)
pF
(
rss
,C
Common source
(
1000
oss
,C
iss
C
)
100
, Output capacitance
)
Common source
(
Common source
(
10
Input capacitance
Reverse transfer capacitance
1
0 40 80 120 160 200
Drain to source voltage VDS (V
rss
V
DS
f=1MHz
=25˚C
T
C
C
C
C
iss
oss
rss
)
Page 3
Power F-MOS FETs 2SK2340
10
–4
10
–3
10
–2
10
–1
11010210
3
0.01
0.1
1
10
100
(1)
(2)
Notes: Rth was measured at Ta=25˚C
and under natural convection.
(1) without heat sink
(2) with a 50 × 50 × 2mm Al heat sink
Time t (s
)
Thermal resistance R
th
(t)
(
˚C/W
)
VDS, VGS Q
600
)
V
500
(
V
DS
DS
400
300
200
100
Drain to source voltage V
0
0 102030405060
g
V
GS
Gate charge amount Qg (nC
12
)
V
10
(
GS
8
6
4
2
Gate to source voltage V
0
)
R
t
th(t)
3
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