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2SK2232
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2232
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance : R
High forward transfer admittance : |Y
Low leakage current : I
Enhancement mode : V
Maximum Ratings
Characteristics Symbol Rating Unit
Drain−source voltage V
Drain−gate voltage (RGS = 20 kΩ) V
Gate−source voltage V
Drain current
Drain power dissipation (Tc = 25°C) PD 35 W
Single pulse avalanche energy
(Note 2)
Avalanche current IAR 25 A
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150 °C
Storage temperature range T
(Ta = 25°C)
DC (Note 1) ID 25 A
Pulse (Note 1) I
= 100 µA (max) (VDS = 60 V)
DSS
= 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
th
DSS
DGR
GSS
DP
E
AS
stg
= 36 m (typ.)
DS (ON)
| = 16 S (typ.)
fs
60 V
60 V
±20 V
100 A
156 mJ
−55~150 °C
Thermal Characteristics
Unit: mm
JEDEC ―
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C..
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
= 25 V, Tch = 25°C (initial), L = 339 µH, RG = 25 Ω, IAR = 25 A
DD
R
3.57 °C / W
th (ch−c)
62.5 °C / W
th (ch−a)
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2SK2232
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut−off current I
Drain−source breakdown
voltage
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V
Drain−source ON resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 12 A 10 16 — S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr — 20 —
Turn−on time ton — 30 —
Switching time
Fall time tf — 55 —
Turn−off time t
(Ta = 25°C)
GSS
DSS
V
(BR) DSS
DS (ON)
— 1000 —
iss
— 200 —
rss
oss
— 130 —
off
VGS = ±16 V, VDS = 0 V — — ±10 µA
VDS = 60 V, VGS = 0 V — — 100 µA
ID = 10 mA, VGS = 0 V 60 — — V
VGS = 4 V, ID = 12 A — 0.057 0.08
V
= 10 V, ID = 12 A — 0.036 0.046
GS
= 10 V, VGS = 0 V, f = 1 MHz
V
DS
— 550 —
Ω
pF
ns
Total gate charge (Gate−source
plus gate–drain)
Gate−source charge Qgs — 25 —
Gate−drain (“miller”) charge Qgd
— 38 —
Q
g
≈ 48 V, VGS = 10 V, ID = 25 A
V
DD
— 13 —
nC
Source−Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode) V
Reverse recovery time trr — 50 — ns
Reverse recovered charge Qrr
— — — 25 A
I
DR
I
— — — 100 A
DRP
IDR = 25 A, VGS = 0 V — — −1.8 V
DSF
= 25 A, VGS = 0 V, dI
I
DR
(Ta = 25°C)
/ dt = 50 A / µs
DR
— 35 — µC
Marking
K2232
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SK2232
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2SK2232
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2SK2232
VDSS
−
⎞
⎟
VB
DDVDSS
⎠
R
= 25
G
V
= 25 V, L = 339 µH
DD
1
E
AS
IL
2
B
⎛
2
⋅⋅⋅=
⎜
⎝
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2SK2232
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
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2004-07-06
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