Page 1
Application
VHF amplifier
Outline
MPAK
2SK217
Silicon N-Channel Junction FET
3
1
2
1. Gate
2. Drain
3. Source
Page 2
2SK217
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Gate to drain current V
Drain current I
Gate current I
GDO
D
G
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Gate to drain breakdown
V
(BR)GDO
voltage
Gate cutoff current I
Gate to source cutoff voltage V
Drain current I
GSS
GS(off)
DSS
Forward transfer admittance |yfs| — 8.0 — mS V
Reverse transfer capacitance Crss — 0.1 — pF V
Note: 1. The 2SK217 is grouped by I
Grade C D E
Mark ZC ZD ZE
I
DSS
2.5 to 5 4 to 8 6 to 12
–30 — — V IG = –100 µA
— — –10 nA VGS = –0.5 V, VDS = 0
— — –2.5 V V
1
*
2.5 — 12 mA VDS = 5 V, VGS = 0
as follows.
DSS
–30 V
20 mA
10 mA
= 5 V, ID = 10 µA
DS
= 5 V, VGS = 0, f = 1 kHz
DS
= 5 V, VGS = 0, f = 1 MHz
DS
2
Page 3
2SK217
Maximum Channel Power
Dissipation Curve
150
100
50
Channel Power Dissipation Pch (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
10
VGS = 0
8
(mA)
D
6
–0.2 V
–0.4
4
–0.6
Drain Current I
2
–0.8
–1.0
Typical Output Characteristics (1)
10
= 0
V
GS
8
(mA)
D
6
–0.2 V
P
ch
= 150 mW
–0.4
4
Drain Current I
2
–0.6
–0.8
–1.0
0 1020304050
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
15
10
(mA)
D
VDS = 5 V
5
Drain Current I
E
D
C
0 12345
Drain to Source Voltage V
DS
(V)
0
–2–3 –1 0
Gate to Source Voltage V
GS
(V)
3
Page 4
2SK217
15
10
5
Forward Transfer Admittance yfs (mS)
0
20
10
Forward Transfer Admittance vs.
Drain to Source Voltage
Ta = –25°C
25
75
V
= 0
GS
f = 1 kHz
51015
Drain to Source Voltage V
DS
(V)
Input Capacitance vs.
Drain to Source Voltage
V
= 0
GS
f = 1 MHz
Forward Transfer Admittance vs.
Drain Current
50
20
10
5
2
1.0
0.5
Forward Transfer Admittance yfs (mS)
0.2 0.5 1.0 2 5 10 20
V
= 5 V
DS
f = 1 kHz
Drain Current I
(mA)
D
Reverse Transfer Capacitance vs.
Drain to Source Voltage
5
2
1.0
5
Input Capacitance Ciss (pF)
2
Drain to Source Voltage V
DS
(V)
0.5
V
= 0
GS
0.2
f = 1 MHz
0.1
0.05
Reverse Transfer Capacitance Crss (pF)
10521.00.50.20.1
0.1 0.2 0.5 1.0 2 5 10
Drain to Source Voltage VDS (V)
4
Page 5
2SK217
Output Capacitance vs.
Drain to Source Voltage
200
100
V
GS
f = 1 MHz
50
20
10
5
Output Capacitance Coss (pF)
2
0.1 0.2 0.5 1.0 2 5 10
Drain to Source Voltage V
8
6
= 0
(V)
DS
Noise Figure vs.
Drain to Source Voltage
30
20
10
Power Gain PG (dB)
0
Drain to Source Voltage V
VGS = 0
f = 100 MHz
Power Gain vs.
Drain to Source Voltage
V
= 0
GS
f = 100 MHz
51015
(V)
DS
SG Output
Impedance
Power Gain and Noise Figure
Test Circuit
Shield
5.4 3.0
50
C
L
1
S.G.
1
4
2
Noise Figure NF (dB)
0481216
D.U.T.
C
2
Drain to Source Voltage V
4.700
L
2
V
DD
50
V.V
Unit R : Ω
C : pF
C1, C2 :
(V)
DS
0 to 30pF Variable Air
L
3.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
:
1
:
4.5 T φ1 mm Copper Ribbon, Tin plated 10 mm Inside dia.
L
2
5
Page 6
Unit: mm
3 – 0.4
+ 0.10
– 0.05
0.95
1.9 ± 0.2
2.95 ± 0.2
0.95
0.65
+ 0.2
1.5 ± 0.15
0.65
0.3
+ 0.2
– 0.6
2.8
– 0.1
1.1
+ 0.10
0.16
– 0.06
0 – 0.1
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
MPAK
—
Conforms
0.011 g
Page 7
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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