Datasheet 2SK2141 Specification

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK2141

DESCRIPTION

The 2SK2141 is N-channel Power MOS Field Effect Transis-

tor designed for high voltage switching applications.

FEATURES

Low On-state Resistance

•

RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A)
LOW Ciss Ciss = 1150 pF TYP.

•

High Avalanche Capability Ratings

•

Isolated TO-220 (MP-45F) Package

•

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSS 600 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) I
Drain Current (pulse) ID (pulse)* ±24 A
Total Power Dissipation (TC = 25 °C) PT1 35 W
Total Power Dissipation (T
Storage Temperature Tstg –55 to +150 °C
Channel Temperature Tch 150 °C
Single Avalanche Current I
Single Avalanche Energy EAS** 12 mJ

*PW ≤ 10 µs, Duty Cycle ≤ 1%
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0

a = 25 °C) PT2 2.0 W

D (DC) ±6.0 A

AS** 6.0 A

PACKAGE DIMENSIONS

(in millimeters)

15.0 ± 0.3

0.7 ± 0.1

2.54 TYP.

10.0 ± 0.3

123

123

φ3.2 ± 0.2

3 ± 0.1

4 ± 0.2

1.3 ± 0.2

1.5 ± 0.2

2.54 TYP.

12.0 ± 0.2

13.5 MIN.

0.65 ± 0.1

ISOLATED TO-220 (MP-45F)

Drain (D)

4.5 ± 0.2

2.7 ± 0.2

2.5 ± 0.1

1. Gate

2. Drain

3. Source

The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.

Document No. TC-2514

(O.D. No. TC–8073)
Date Published January 1995 P
Printed in Japan

Gate (G)

Source (S)

Body diode

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source On-state Resistance RDS(on) 0.8 1.1 Ω VGS = 10 V, ID = 3.0 A

Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance  yfs  2.0 S VDS = 10 V, ID = 3.0 A

Drain Leakage Current IDSS 100
Gate to Source Leakage Current IGSS ±100 nA VGS = ±30 V, VDS = 0

Input Capacitance Ciss 1150 pF VDS = 10 V

Output Capacitance Coss 260 pF VGS = 0

Reverse Transfer Capacitance Crss 60 pF f = 1 MHz

Turn-On Delay Time td(on) 15 ns VGS = 10 V

Rise Time tr 15 ns VDD = 150 V
Turn-Off Delay Time td(off) 75 ns ID = 3.0 A, RG = 10 Ω
Fall Time tf 13 ns RL = 37.5 Ω

Total Gate Charge QG 40 nC VGS = 10 V

Gate to Source Charge QGS 6.0 nC ID = 6.0 A

Gate to Drain Charge QGD 20 nC VDD = 480 V

Diode Forward Voltage VF(S-D) 1.0 V IF = 6.0 A, VGS = 0

Reverse Recovery Time trr 370 ns IF = 6.0 A

Reverse Recovery Charge Qrr 1.5

µ

A VDS = 600V, VGS = 0

µ

C di/dt = 50 A/µs

2SK2141

Test Circuit 1: Avalanche Capability Test Circuit 2: Switching Time

PG.

VGS = 20 → 0 V

R

G = 25 Ω

VDD

50 Ω

ID

D.U.T.

IAS

BVDSS

L

V

DD

VDS

Starting Tch

PG.

VGS
0

τ

µ

τ = 1 s

Duty Cycle ≤ 1%

RG

G = 10 Ω

R

D.U.T.

R

VDD

L

VGS
Wave
Form

I

D

Wave
Form

V

ID

Test Circuit 3: Gate Charge

D.U.T.

G = 2 mA

PG.

I

50 Ω

RL

VDD

GS

GS (on)

10 %

0

10 %

0

td(on) tr td (off) tf

V

90 %

ID

ton toff

90 %

90 %

10 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK2141

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 140 160

6040 80 100 120

T

C

- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

100

I

D (pulse)

DS (on)

R

(at V

Limited

= 20 V)

GS

I

D (DC)

Power Dissipation Limited

10 ms

200 ms

10

PW = 10 s

100 s

µ

1 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

80

60

40

20

- Total Power Dissipation - W

T

P

0

20 140 160

6040 80 100 120

T

C

- Case Temperature - °C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

12

10

µ

8

10 V

12 V

8 V

Pulsed

6

1.0

- Drain Current - A

D

I

TC = 25 °C
Single Pulse

0.1

1.0

V

DS

- Drain to Source Voltage - V

DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE

100

50

Tch = 125 °C

75 °C
25 °C

–25 °C

10

5.0

- Drain Current - A

D

I

1.0
0

V

GS

- Gate to Source Voltage - V

10 100 1 000

VDS = 10 V
Pulsed

510

4

- Drain Current - A

D

I

2

0

416812

V

DS

- Drain to Source Voltage - V

V

GS

= 6 V

20

3

2SK2141

1 000

100

10

1.0

0.1

0.01

- Transient Thermal Resistance - °C/W

th (t)

r

0.001
10 100 1 m 10 m 100 m 1 10 100 1 000

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

Tch = –25 °C

25 °C
75 °C

125 °C

1.0

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

th (ch-a)

= 62.5 °C/W

R

th (ch-c)

= 3.57 °C/W

TC = 25 °C
Single Pulse

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

2.0

1.0

Pulsed

ID = 6.0 A

3.0 A

1.2 A

VDS = 10 V
Pulsed

0.1

yfs - Forward Transfer Admittance - S

0.1

I

D

1.0 10

- Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

2.0

1.6

VGS = 10 V

1.2
20 V

0.8

0.4

- Drain to Source On-State Resistance - Ω

0

1.0 10 100

DS (on)

R

D

- Drain Current - A

I

Pulsed

- Drain to Source On-State Resistance - Ω

DS (on)

R

0

0

412

V

GS

82016

- Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE

5.0

4.0

3.0

2.0

1.0

- Gate to Source Cutoff Voltage - V

VDS = 10 V

ID = 1 mA

GS (off)

0

V

– 50 0 50 100 150

T

ch

- Channel Temperature - °C

4

2SK2141

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

3.0
VGS = 10 V

Pulsed

2.0

ID = 6 A

3 A

1.0

- Drain to Source On-State Resistance - Ω

0
–50 0 50 100 150

DS (on)

R

Tch - Channel Temperature - °C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

C

1 000

iss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

50

10

VGS = 10 V

1.0

0.1

0.01

- Diode Forward Current - A

SD

I

SD

- Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1 000

100

VGS = 0 V

1.00.50

Pulsed

1.5

t

r

t

f

t

d (off)

- Capacitance - pF

rss

, C

oss

, C

iss

C

100

TC = 25 °C
Single Pulse

10

1.0

C

10 100 1 000

DS

- Drain to Source Voltage - V

V

C

oss

rss

DYNAMIC INPUT CHARACTERISTICS

800

ID = I

D (DC)

V

600

VDD = 450 V

300 V

GS

120 V

400

200

- Drain to Source Voltage - V

DS

V

V

DS

0 20406080

g

- Gate Charge - nC

Q

- Switching Time - ns

f

, t

d (off)

, t

r

, t

d (on)

t

16

14

12

10

8

6

4

- Gate to Source Voltage - V

GS

2

V

- Reverse Recovery Time - ns

rr

t

0

t

d (on)

10

VDD = 150 V
V

GS

= 10 V

G

= 10 Ω

R

1.0

1.0 10 100

D

- Drain Current - A

I

REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT

800

di/dt = 50 A/ s

GS

= 10 V

V

600

400

200

0

0.1

1.0 10 100

Diode Forward Current - A

µ

5

2SK2141

SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD

50

10

IAS = 6.0 A

R

G

= 25 Ω

1.0

DD

= 150 V

V

- Single Avalanche Current - A

AS

GS

= 20 V → 0

V

I

Starting T

0.5
10

µµ

ch

100

L - Inductance - H

E

AS

= 12 mJ

1 m 10 m

SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE

14

12

I

D (peak

= I

D (DC)

VDD = 150 V

10

8

6

4

2

- Single Avalanche Energy - mJ

AS

E

0

25 50 75 125 150100

Starting Tch-Starting Channel Temperature - °C

6

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

2SK2141

7

2SK2141

[MEMO]

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M4 94.11