Datasheet 2SK216, 2SK215, 2SK213, 2SK214 Datasheet (HIT)

2SK213, 2SK214, 2SK215, 2SK216

Silicon N-Channel MOS FET

Application

High frequency and low frequency power amplifier, high speed switching.

Complementary pair with 2SJ76, J77, J78, J79

Features

• Suitable for direct mounting

• High forward transfer admittance

• Excellent frequency response

• Enhancement-mode

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Source
(Flange)

3. Drain

2SK213, 2SK214, 2SK215, 2SK216

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK213 V

DSX

2SK214 160
2SK215 180

2SK216 200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I

GSS

D

DR

Channel dissipation Pch 1.75 W

1

Pch*
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C

Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

140 V

±15 V
500 mA
500 mA

30 W

Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK213 V

(BR)DSX

140 — — V ID = 1 mA, VGS = –2 V

breakdown voltage 2SK214 160 — — V

2SK215 180 — — V
2SK216 200 — — V

Gate to source breakdown

V

(BR)GSS

±15——V I

= ±10 µA, VDS = 0

G

voltag
Gate to source voltage V
Drain to source saturation

V

GS(on)

DS(sat)

0.2 — 1.5 V ID = 10 mA, VDS = 10 V *
— — 2.0 V ID = 10 mA, VGD = 0 *

1

voltage
Forward transfer admittance |yfs|2040—mSI

= 10 mA, VDS = 20 V *

D

Input capacitance Ciss — 90 — pF ID = 10 mA, VDS = 10 V,
Reverse transfer capacitance Crss — 2.2 — pF f = 1 MHz

Note: 1. Pulse test

1

1

2

2SK213, 2SK214, 2SK215, 2SK216

Power vs. Temperature Derating

60

(W)

40

20

Channel Dissipation Pch

50 1000

Case Temperature T

Typical Output Characteristics

50

TC = 25°C

40

(mA)

D

30

C

(°C)

0.8

0.7

0.6

150

500

Typical Output Characteristics

400

(mA)

D

300

200

Drain Current I

100

Drain to Source Voltage V

Typical Transfer Characteristics

500

VDS = 20 V

400

(mA)

D

300

3.5

= –25°C

C

T

12

25

TC = 25°C

3.0

2.5

2.0

1.5

1.0

V

= 0.5 V

GS

1684020

(V)

DS

75

20

Drain Current I

10

Drain to Source Voltage V

60

0.5

0.4

0.3

0.2

VGS = 0.1V

8040200 100

(V)

DS

200

Drain Current I

100

0

Gate Source Voltage V

3

42105

(V)

GS

3

2SK213, 2SK214, 2SK215, 2SK216

Typical Transfer Characteristics

100

VDS = 20 V

80

(mA)

D

60

40

Drain Current I

20

0

Gate Source Voltage V

25

= –25°C

C

T

1.2

75

500

100

1.60.80.40 2.0
(V)

GS

Forward Transfer Admittance

vs. Frequency

200

100

50

20

10

Forward Transfer Admittance yfs (mS)

Forward Transfer Admittance

vs. Drain Current

5

Drain Current I

TC = 25°C

= 20 V

V

DS

20

D

50

(mA)

1001052 200

10

1.0

0.1

0.05

Forward Transfer Admittance yfs (mS)

5 k

TC = 25°C
V

DS

= 10 mA

I

D

10 k

= 20 V

100 k

Frequency f (H

1 M

50 M

10 M

Z)

4

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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