Page 1
Power F-MOS FETs
2SK2130
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed: EAS > 15mJ
●V
= ±30V guaranteed
GSS
●High-speed switching: t
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
= 45ns
f
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
= 25°C)
C
Ratings
−55 to +150
900
±30
±3
±6
15
50
2
150
Unit
V
V
A
A
mJ
W
°C
°C
φ3.2±0.1
15.0±0.313.7
–0.2
+0.5
8.0±0.2
4.1±0.2
Solder Dip
7
9.9±0.3
231
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
unit: mm
4.6±0.2
2.9±0.2
2.6±0.1
0.7±0.1
1: Gate
2: Drain
3: Source
TO-220E Package
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
= 25°C)
Conditions
VDS = 720V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
IDR = 3A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A
VDD = 200V, RL = 100Ω
min
900
2
1.5
typ
3.8
2.2
600
90
30
40
40
45
100
max
0.1
±1
5
5
−1.6
2.5
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
1
Page 2
Power F-MOS FETs 2SK2130
Area of safe operation (ASO) PD Ta EAS T
100
10
)
I
DP
A
(
I
D
D
1
Drain current I
0.1
0.01
1 10 100 1000
Non repetitive pulse
=25˚C
T
C
1ms
10ms
Drain to source voltage VDS (V
ID V
DS
4
VGS=15V
10V
3
)
A
(
D
2
Drain current I
1
0
0 102030405060
6V
5.5V
Drain to source voltage VDS (V
t=100µs
DC
)
5V
50W
4.5V
)
60
)
W
(
50
D
40
30
20
10
Allowable power dissipation P
0
020
(1) TC=Ta
(2) Without heat sink
=2W)
(P
D
(1)
(2)
40 60 80 100 120 140 160
Ambient temperature Ta (˚C
ID V
GS
5
4
)
A
(
D
3
2
25˚C
=0˚C
T
150˚C
C
100˚C
Drain current I
1
0
012108264
Gate to source voltage VGS (V
VDS=25V
24
)
mJ
(
20
16
12
8
4
Avalanche energy capacity EAS
0
25 50
)
)
Junction temperature Tj (˚C
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
Case temperature TC (˚C
j
VDD=50V
I
=3A
D
75 100 125 150 175
)
Vth T
C
VDS=25V
=1mA
I
D
)
VDS V
80
70
)
V
(
60
DS
50
40
30
20
Drain to source voltage V
10
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V
2
GS
TC=25˚C
I
=6A
D
3A
1.5A
0.75A
10
)
Ω
(
8
DS(on)
6
4
2
Drain to source ON-resistance R
0
012345
)
Drain current ID (A
R
DS(on)
T
C
100˚C
25˚C
I
=150˚C
0˚C
D
VGS=10V
)
| Yfs | I
4.0
)
S
(
3.5
|
fs
3.0
2.5
2.0
1.5
1.0
0.5
Forward transfer admittance |Y
0
1234
0
D
Drain current ID (A
VDS=25V
=25˚C
T
C
)
Page 3
Power F-MOS FETs 2SK2130
C
, C
, C
iss
oss
10000
)
,
)
pF
(
rss
,C
Common source
(
1000
oss
,C
iss
C
)
100
, Output capacitance
)
Common source
(
Common source
(
10
Input capacitance
Reverse transfer capacitance
1
0 50 100 150 200 250
Drain to source voltage VDS (V
rss
V
DS
f=1MHz
=25˚C
T
C
C
C
C
1000
)
V
(
800
iss
oss
rss
DS
600
400
200
Drain to source voltage V
)
VDS, VGS Q
V
DS
V
GS
0
01020304050
Gate charge amount Qg (nC
g
ID=3A
=25˚C
T
C
20
16
12
8
4
0
)
t
, tr, tf, t
d(on)
250
)
)
V
ns
(
(
200
GS
d(off)
,t
f
,t
r
150
,t
d(on)
100
50
Gate to source voltage V
Switching time t
0
012345
Drain current ID (A
d(off)
I
VDD=200V
V
T
C
=10V
GS
=25˚C
)
t
t
t
t
D
d(off)
f
r
d(on)
3
Loading...