Page 1
Power F-MOS FETs
2SK2128
Silicon N-Channel Power F-MOS FET
■ Features
●Avalanche energy capacity guaranteed: EAS > 15mJ
●V
= ±20V guaranteed
GSS
●High-speed switching: t
●No secondary breakdown
■ Applications
●Contactless relay
●Diving circuit for a solenoid
●Driving circuit for a motor
●Control equipment
●Switching power supply
■ Absolute Maximum Ratings (T
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
= 35ns
f
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
*
EAS
P
D
T
ch
T
stg
= 25°C)
C
Ratings
−55 to +150
800
±30
±2
±4
15
40
2
150
Unit
V
V
A
A
mJ
W
°C
°C
φ3.2±0.1
15.0±0.313.7
–0.2
+0.5
8.0±0.2
4.1±0.2
Solder Dip
7
9.9±0.3
231
3.0±0.2
1.2±0.15
1.45±0.15
0.75±0.1
2.54±0.2
5.08±0.4
unit: mm
4.6±0.2
2.9±0.2
2.6±0.1
0.7±0.1
1: Gate
2: Drain
3: Source
TO-220E Package
■ Electrical Characteristics (T
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
C
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Yfs |
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
= 25°C)
Conditions
VDS = 640V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1A
VDS = 25V, ID = 1A
IDR = 2A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 1A
VDD = 200V, RL = 200Ω
min
800
2
0.7
typ
4.8
1.1
350
60
25
15
20
25
60
max
0.1
±1
5
7
−1.3
3.125
Unit
mA
µA
V
V
Ω
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
1
Page 2
Power F-MOS FETs 2SK2128
Area of safe operation (ASO) PD Ta EAS T
100
10
)
A
(
I
DP
D
I
D
1
Drain current I
0.1
0.01
1 10 100 1000
Non repetitive pulse
=25˚C
T
C
1ms
10ms
100ms
DC
Drain to source voltage VDS (V
ID V
DS
4
VGS=15V
3
)
A
(
D
2
Drain current I
1
0
10V
7V
6.5V
6V
0 102030405060
Drain to source voltage VDS (V
t=100µs
)
TC=25˚C
5.5V
5V
)
50
)
W
(
40
D
30
20
10
Allowable power dissipation P
0
020
(1) TC=Ta
(2) Without heat sink
(P
=2W)
D
(1)
(2)
40 60 80 100 120 140 160
Ambient temperature Ta (˚C
ID V
GS
5
4
)
A
(
D
3
2
=0˚C
C
T
25˚C
100˚C
Drain current I
1
0
012108264
Gate to source voltage VGS (V
VDS=25V
125˚C
30
)
mJ
(
25
20
15
10
5
Avalanche energy capacity EAS
0
25 50
)
)
Junction temperature Tj (˚C
6
)
5
V
(
th
4
3
2
1
Gate threshold voltage V
0
0 25 50 75 100 125 150
Case temperature TC (˚C
j
VDD=50V
I
=2A
D
75 100 125 150 175
)
Vth T
C
VDS=25V
=1mA
I
D
)
R
I
DS(on)
12
)
Ω
(
10
DS(on)
8
6
4
2
Drain to source ON-resistance R
0
012345
VGS=10V
15V
Drain current ID (A
2
D
2.0
)
S
(
|
fs
1.5
1.0
0.5
| Yfs | I
D
VDS=25V
=25˚C
T
C
,
)
Common source
(
, Output capacitance
)
Common source
(
C
, C
iss
10000
)
pF
(
rss
,C
1000
oss
,C
iss
C
)
100
Common source
(
10
oss
, C
rss
V
DS
f=1MHz
=25˚C
T
C
C
iss
C
oss
C
rss
Forward transfer admittance |Y
Input capacitance
Reverse transfer capacitance
0
12 4
0
)
Drain current ID (A
3
)
1
0 50 100 150 200
Drain to source voltage VDS (V
)
Page 3
Power F-MOS FETs 2SK2128
VDS, VGS Q
800
700
)
V
(
600
DS
500
V
V
DS
400
300
200
Drain to source voltage V
100
0
0 4 8 12 16 20 24
Gate charge amount Qg (nC
2
10
Notes: R
was measured at Ta=25˚C
th
)
˚C/W
(
(t)
th
10
and under natural convection.
(1) without heat sink
(2) with a 100 × 100 × 2mm Al heat sink
d=1
0.5
1
0.1
GS
g
ID=2A
=25˚C
T
C
16
14
)
V
(
12
GS
10
8
6
4
Gate to source voltage V
2
0
)
R
t
th(t)
t
, tr, tf, t
d(on)
120
)
ns
100
(
d(off)
80
,t
f
,t
r
,t
d(on)
60
40
20
Switching time t
0
0 0.5 1.0 1.5 2.0 2.5
d(off)
I
Drain current ID (A
(1)
(2)
D
VDD=200V
=10V
V
GS
T
=25˚C
C
t
d(off)
t
d(on)
)
t
f
t
r
–1
10
0.05
0.01
Thermal resistance R
–2
10
–4
10
–3
10
t
t
P
P
d=
T
–2
10
–1
10
Time t (s
11010210
)
T
3
3
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