Datasheet 2SK2125 Datasheet (Panasonic)

Power F-MOS FETs

2SK2125

Silicon N-Channel Power F-MOS FET

■ Features

●Avalanche energy capacity guaranteed: EAS > 15.6mJ

●V

= ±30V guaranteed

GSS

●High-speed switching: t

●No secondary breakdown

■ Applications

●Contactless relay

●Diving circuit for a solenoid

●Driving circuit for a motor

●Control equipment

●Switching power supply

■ Absolute Maximum Ratings (T

Parameter

Drain to Source breakdown voltage
Gate to Source voltage

Drain current

Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature

*

L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse

= 35ns

f

DC
Pulse

TC = 25°C
Ta = 25°C

Symbol

V

DSS

V

GSS

I

D

I

DP

*

EAS

P

D

T

ch

T

stg

= 25°C)

C

Ratings

±2.5

15.6

−55 to +150

500
±30

±10

40

2

150

Unit

V
V
A
A

mJ

W

°C
°C

φ3.2±0.1

15.0±0.313.7

–0.2

+0.5

8.0±0.2

4.1±0.2

Solder Dip

7

9.9±0.3

231

3.0±0.2

1.2±0.15

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

unit: mm

4.6±0.2

2.9±0.2

2.6±0.1

0.7±0.1

1: Gate
2: Drain
3: Source

TO-220E Package

■ Electrical Characteristics (T

Parameter

Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case

C

Symbol

I

DSS

I

GSS

V

DSS

V

th

R

DS(on)

| Yfs |
V

DSF

C

iss

C

oss

C

rss

t

d(on)

t

r

t

f

t

d(off)

R

th(ch-c)

= 25°C)

Conditions

VDS = 400V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 1.5A
VDS = 25V, ID = 1.5A
IDR = 2.5A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VGS = 10V, ID = 1.5A
VDD = 150V, RL = 100Ω

min

500

2

1

typ

3.2

1.5

330

55
20
15
25
30
55

max

0.1
±1

5
4

−1.5

3.125

Unit

mA

µA

V
V

Ω

S

V
pF
pF
pF

ns
ns
ns
ns

°C/W

1

Power F-MOS FETs 2SK2125

Area of safe operation (ASO) PD  Ta EAS  T

10

I

DP

)

A

I

(

3

D

D

1

0.3

Drain current I

0.1
Non repetitive pulse

=25˚C

T

C

10ms
100ms

100µs

DC

30 30010 100

Drain to source voltage VDS (V

ID  V

DS

4.0

3.5

VGS=10V

7V

3.0

)

A

(

2.5

D

2.0

1.5

Drain current I

1.0

0.5

0

6.5V

6V

5.5V

0 102030405060

Drain to source voltage VDS (V

t=10µs

1ms

T

C

40W

=25˚C

5V

50

)
W

(

40

D

30

20

10

Allowable power dissipation P

0

020

)

Ambient temperature Ta (˚C

5

4

)
A

(

D

3

2

Drain current I

1

0

012108264

)

Gate to source voltage VGS (V

(1) TC=Ta
(2) Without heat sink

(P

=2W)

D

(1)

(2)

40 60 80 100 120 140 160

)

ID  V

GS

VDS=25V

TC=0˚C

150˚C

100˚C25˚C

)

24

)
mJ

(

20

16

12

8

4

Avalanche energy capacity EAS

0

25 50

Junction temperature Tj (˚C

6

)

5

V

(

th

4

3

2

1

Gate threshold voltage V

0

0 25 50 75 100 125 150

Case temperature TC (˚C

j

VDD=50V
I

=2.5A

D

75 100 125 150 175

)

Vth  T

C

VDS=25V

=1mA

I

D

)

R

 I

DS(on)

12

)

Ω

(

10

DS(on)

8

6

4

2

Drain to source ON-resistance R

0

012345

T

C

100˚C

25˚C

=150˚C

0˚C

Drain current ID (A

2

D

VGS=10V

| Yfs |  I

3.0

)
S

(

2.5

|

fs

2.0

1.5

1.0

0.5

D

VDS=25V
T

=25˚C

C

100

)
A

(

10

DR

1

0.1

Drain reverse current I

IDR  V

DSF

VGS=0

=25˚C

T

C

Forward transfer admittance |Y

0

012345

)

Drain current ID (A

)

0.01
0 0.5 1.0 1.5 2.0

Diode forward voltage V

DSF

(V

)

Power F-MOS FETs 2SK2125

C

, C

, C

iss

oss

10000

)

,

)

pF

(

rss

,C

Common source

(

1000

oss

,C

iss

C

)

100

, Output capacitance

)

Common source

(

Common source

(

10

Input capacitance

Reverse transfer capacitance

1

0 50 100 150 200 250

Drain to source voltage VDS (V

2

10

Notes: Rth was measured at Ta=25˚C

)

˚C/W

(

(t)

th

10

and under natural convection.
(1) without heat sink
(2) with a 100 × 100 × 2mm Al heat sink

d=1

0.5

1

0.1

rss

 V

DS

f=1MHz

=25˚C

T

C

C

iss

C

oss

C

rss

400

350

)
V

(

300

DS

250

200

150

100

Drain to source voltage V

50

)

R

th(t)

VDS, VGS  Q

VDS=150V

V

0

0 4 8 12 16 20 24

g

250V

GS

V

DS

Gate charge amount Qg (nC

 t

(1)

(2)

16

14

12

10

8

6

4

2

0

)

)
V

ns

(

(

GS

,t
,t
,t

Gate to source voltage V

Switching time t

)

150

125

d(off)

100

f
r

d(on)

t

d(on)

75

50

25

0

0 0.5

Drain current ID (A

, tr, tf, t

1.0 1.5 2.0 2.5 3.0

d(off)

 I

VDD=150V
V

GS

=25˚C

T

C

D

=10V

t

t
t

t

d(off)

f
r

d(on)

)

–1

10

0.05

0.01

Thermal resistance R

–2

10

–4

10

–3

10

t

t

P

P

d=

T

T

–2

10

–1

10

Time t (s

11010210

)

3

3