Datasheet 2SK2110 Datasheet (NEC)

DATA SHEET

Source (S)

Internal diode

Gate
protection
diode

Gate (G)

Drain (D)

PIN CONNECTIONS

S: Source
D: Drain
G: Gate

Marking: NT

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

2SK2110

The 2SK2110 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.

This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.

FEATURES

• Low ON resistance

RDS(on) = 1.5 Ω MAX. @VGS = 4.0 V, ID = 0.3 A

• High switching speed

on + toff < 100 ns

t

• Low parasitic capacitance

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PACKAGE DIMENSIONS (in mm)

4.5 ± 0.1

2.5 ± 0.1

4.0 ± 0.25

1.5 ± 0.1

+0.03

0.41

–0.05

0.42
±0.06

0.8 MIN.

1.6 ± 0.2

S

1.5

3.0

D

0.47
±0.06

G

0.42
±0.06

EQUIVALENT CIRCUIT

PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 100 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±0.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±1.0 A

Total Power Dissipation PT 16 cm2 × 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Document No. D11230EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan

Duty cycle ≤ 50 %

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 100 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.5 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 0.3 A 0.4 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 10 V, VGS = 0, 100 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 10 pF
Turn-On Delay Time td(on) VDD = 25 V, ID = 0.3 A 2 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 13 ns

RDS(on)1 VGS = 4.0 V, ID =0.3 A 0.95 1.5 Ω
RDS(on)2 VGS = 10 V, ID = 0.3 A 0.82 1.2 Ω

f = 1.0 MHz

VGS(on) = 10 V, RG = 10 Ω
RL = 83 Ω

38 pF

1.3 ns
38 ns

2SK2110

µ

A

µ

A

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2110

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Derating Factor - %

0 30 60 90 120 150

T

A

- Ambient Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

1.0

3.0 V

2.5 V

0.8

0.6

10 V

4.5 V

4.0 V

3.5 V

0.4

- Drain Current - A

D

I

0.2

VGS = 2.0 V

FORWARD BIAS SAFE OPERATING AREA

10

5

2

1

0.5

- Drain Current - A

D

I

0.2

0.1
1

2 5 20 50 100

V

DS

TRANSFER CHARACTERISTICS

1

VDS = 10 V

0.1

0.01

- Drain Current - A

D

0.001

I

1 ms

10 ms

PW = 100 ms

DC

10

- Drain to Source Voltage - V

TA = 75 ˚C

25 ˚C

–25 ˚C

0 0.4 0.8 1.2 1.6 2.0

V

DS

- Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

DS

= 10 V

V

1

A

= –25 ˚C

T

25 ˚C
75 ˚C

0.1

| - Forward Transfer Admittance - S

fs

0.01

|y

0.001 0.01 0.1 1
I

D

- Drain Current - A

0.0001

0.5 1 1.5 2 2.5 3
V

GS

- Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

1.5
TA = 75 ˚C

1

25 ˚C

–25 ˚C

0.5

- Drain to Source On-State Resistance - Ω

0

0.01 0.1 1 10

DS(on)

R

I

D

- Drain Current - A

VGS = 4 V

3

2SK2110

DRAIN TO SOURCE ON-STATERESISTANCE
vs. DRAIN CURRENT

1.5

TA = 75 ˚C

1

25 ˚C

–25 ˚C

0.5

0

0.01 0.1 1 10

RDS(on) - Drain to Source On-State Resistance - Ω

I

D - Drain Current - A

VGS = 10 V

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

500

VGS = 0
f = 1 MHz

200

100

50

Ciss

Coss

20

10

Ciss, Coss, Crss - Capacitance - pF

5

0.1 0.5 10 100
V

DS - Drain to Source Voltage - V

Crss

20 500.2 1 2 5

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

1.5
ID = 0.3 A

1

0.5

0 5 10 20

RDS(on) - Drain to Source On-State Resistance - Ω

V

GS - Gate to Source Voltage - V

15

SWITCHING CHARACTERISTICS

50

td(off)

20

tf

10

tr

5

2

td(on), tr, td(off), tf - Switching Time - ns

1

0.05 0.2 1 5

0.1 0.5 2
I

D - Drain Current - A

td(on)

VDD = 25 V
VGS(on) = 10 V

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

1

0.1

0.01

0.001

ISD - Diode Forward Current - A

0.0001

0.2 0.4 0.7 1
V

SD - Source to Drain Voltage - V

4

0.8

0.90.3 0.5 0.6

2SK2110

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

2SK2110

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M4 94.11