Datasheet 2SK2109 Datasheet (NEC)

DATA SHEET

Source (S)

Internal diode

Gate protection
diode

Gate (G)

Drain (D)

PIN CONNECTIONS

S: Source
D: Drain
G: Gate

Marking: NS

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

2SK2109

The 2SK2109 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.

This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuator, such as motors
and DC/DC converters.

FEATURES

• Low ON resistance

RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A

• High switching speed

on + toff < 100 ns

t

• Low parasitic capacitance

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PACKAGE DIMENSIONS (in mm)

4.5 ± 0.1

2.5 ± 0.1

4.0 ± 0.25

1.5 ± 0.1

+0.03

0.41

–0.05

0.42
±0.06

0.8 MIN.

1.6 ± 0.2

S

1.5

3.0

D

0.47
±0.06

G

0.42
±0.06

EQUIVALENT CIRCUIT

Document No. D11229EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan

PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 60 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±0.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±1.0 A

Duty cycle ≤ 50 %
Total Power Dissipation PT 16 cm2 × 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 60 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.5 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 0.3 A 0.4 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 10 V, VGS = 0, 111 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 19 pF
Turn-On Delay Time td(on) VDD = 25 V, ID = 0.3 A 2.2 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 19 ns

RDS(on)1 VGS = 4.0 V, ID =0.3 A 0.55 1.0 Ω
RDS(on)2 VGS = 10 V, ID = 0.3 A 0.41 0.8 Ω

f = 1.0 MHz

VGS(on) = 10 V, RG = 10 Ω
RL = 83 Ω

55 pF

1.5 ns
35 ns

2SK2109

µ

A

µ

A

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2109

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

- Derating Factor - %

T

d

20

0

30

A

- Ambient Temperature - ˚C

T

DRAIN CURRENT vs.

10 V

DRAIN TO SOURCE VOLTAGE

1.0
10 V

0.8

0.6

0.4

- Drain Current - A

D

I

0.2

60 90 120 150

3.0 V

4.5 V

4.0 V

3.5 V

2.5 V

VGS = 2.0 V

FORWARD BIAS SAFE OPERATING AREA

10

5

2

1

0.5

- Drain Current - A

D

I

0.2
Single pulse

0.1

0

2 5 10 20 50 100

V

TRANSFER CHARACTERISTICS

1

V

DS

= 10 V

0.1

0.01

- Drain Current - A

D

I

0.001

PW = 100 ms

DC

DS

- Drain to Source Voltage - V

TA = 75 ˚C

1 ms

10 ms

25 ˚C

–25 ˚C

0

0.4 0.8 1.2 1.6 2.0

DS

- Drain to Source Voltage - V

V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

VDS = 10 V

1

TA = –25 ˚C

0.1

| - Forward Transfer Admittance - S

fs

y

|

0.01

0.001

0.01 0.1 1

D

- Drain Current - A

I

25 ˚C
75 ˚C

0.0001

0.5

1 1.5 2 2.5 3

GS

- Gate to Source Voltage - V

V

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

1

V

GS

= 4 V

TA = 75 ˚C

25 ˚C

0.5

–25 ˚C

- Drain to Source On-State Resistance - Ω

0

DS(ON)

R

0.01

0.1 1 10

D

- Drain Current - A

I

3

2SK2109

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT

1

V

GS

= 10 V

TA = 75 ˚C

0.5
25 ˚C

–25 ˚C

- Drain to Source On-State Resistance - Ω

0

DS(on)

R

0.01 0.1 1 10

D

- Drain Current - A

I

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

500

200

100

50

- Capacitance - pF

rss

, C

20

oss

, C

iss

C

10

5

0.2 2 5 20 100

0.1
V

0.5 1 10 50

DS

- Drain to Source Voltage - V

C

C

oss

C

rss

VGS = 0
f = 1 MHz

iss

DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE

1.5
I

D

= 0.3 A

1

0.5

- Drain to Source On-State Resistance - Ω

DS(on)

R

0101520

5

GS

- Gate to Source Voltage - V

V

SWITCHING CHARACTERISTICS

50

t

d(off)

20

10

- Switching Time - ns

f

5

, t

d(off)

, t

r

, t

2

d(on)

t

1

0.5

0.1 0.2 1 5

0.5 2

D

- Drain Current - A

I

t

f

t

r

t

d(on)

VDD = 25 V
V

GS(on)

= 10 V

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

1

0.1

0.01

0.001

- Diode Forward Current - A

SD

I

0.0001

0.2

0.3 0.5 0.6 0.8 0.9 1

0.4 0.7

SD

- Source to Drain Voltage - V

V

4

2SK2109

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

2SK2109

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device before using it in a particular application.

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audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

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Anti-radioactive design is not implemented in this product.

M4 94.11