Datasheet 2SK2096 Datasheet (HIT)

2SK2096

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

• Avalanche ratings

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK2096

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V
±20 V
45 A
180 A
45 A
45 A
173 mJ
100 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs|2537—SI

Input capacitance Ciss — 3530 — pF VDS = 10 V
Output capacitance Coss — 1480 — pF VGS = 0
Reverse transfer capacitance Crss — 300 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

60 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0

1.0 — 2.25 V ID = 1 mA, VDS = 10 V
— 0.018 0.022 Ω ID = 25 A

V

= 10 V*

GS

— 0.023 0.028 Ω ID = 25 A

V

= 4 V*

GS

= 25 A

D

V

= 10 V*

DS

1

1

1

— 33 — ns ID = 25 A
— 160 — ns VGS = 10 V
— 450 — ns RL = 1.5 Ω
— 230 — ns
— 1.3 — V IF = 45 A, VGS = 0

— 130 — ns IF = 45 A, VGS = 0,

di

/ dt = 50 A / µs

F

2SK2096

See characteristic curve of 2SK1911.

3

2SK2096

160

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

200

AR

160

120

500

Maximum Safe Operation Area

300

100

D

30

10

3

Drain Current I (A)

1

Operation in
this area is
limited by R

Ta = 25 °C

0.5

0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)

Maximun Avalanche Energy vs.

Channel Temperature Derating

I = 45 A

AP

V = 25 V

DD

duty < 0.1 %
Rg > 50

Ω

10 µs

100 µs

PW = 10 ms (1shot)

DC Operation (Tc = 25 °C)

DS(on)

1 ms

DS

80

40

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

4

2SK2096

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

Avalanche Test Circuit and Waveform

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.25 °C/W, Tc = 25 °C

P

DM

PW

T

D =

100 m 1 10

PW

T

Vin
15 V

V

DS

Monitor

Rg

50Ω

L

I

AP

Monitor

D. U. T

V

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

AR

1

2

I

AP

I

D

E = • L • I •

V

DD

V

DD

0

AP

2

5

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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5. This product is not designed to be radiation resistant.

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