Page 1
2SK2094
g
Transistors
4V Drive Nch MOS FET
2SK2094
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy .
zApplications
Switching
zPackaging specifications
CPT3
(1)Gate
(2)Drain
(3)Source
zInner circuit
6.5
5.1
0.75
0.9
2.3
(1)
(2)
Abbreviated symbol : K2094
2.3
0.5
1.5
5.5
0.9
0.65
2.3
(3)
1.5
2.5
0.8Min.
0.5
1.0
9.5
Type
2SK2094
Package
Code
Basic ordering unit
(pieces)
Tapin
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation(Tc=25
Channel temperature
Storage temperature
Pw ≤ 300µs, Duty cycle ≤ 2%
∗
Symbol Limits Unit
V
DSS
V
GSS
I
DP
I
DR
I
DRP
°C
)
P
Tch
Tstg
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
60 V
±
20
D
2I
∗
2
∗
D
8
10
150
−55 to +150
V
A
A8
A
A
W
°C
°C
Rev.A 1/4
Page 2
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time (Body Diode)
V
t
V
R
GSS
I
(BR)DSS
I
DSS
GS(th)
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
d(on)
r
t
d(off)
t
t
f
rr
t
Typ. Max. Unit Test Conditions
Min.
100
−
100
2.5
−
−
−
−
nA V
V
µA
V
Ω
S
pF
pF
pF
GS
= ±20V, V
I
D
=1mA, VGS=0V
V
DS
=60V, VGS=0V
V
DS
=10V, ID=1mA
I
D
=1A, VGS=10V
I
D
=1A, VGS=4V
DS
=10V, ID=1A
V
V
DS
=10V
GS
=0V
V
f=1MHz
±
−
−
60
1.0
−
−
−
−
0.3
−
− 0.4 0.5
1.0
−
400
−
150
−
50
−
0.35
− 10 − ID=1A, VDD=30Vns
− 20 − VGS=10Vns
− 100 − RL=30Ωns
− 40 − RG=10Ωns
− 100 − IDR=2A, VGS=0V, di/dt=50A/µsns
2SK2094
DS
=0V
Rev.A 2/4
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Transistors
0
a
5
s
s
e
e
0
)
0
e
0
e
e
)
zElectrical characteristics curve
10
5
(A)
2
D
1
Operation in this area
0.5
0.2
0.1
DRAIN CURRENT : I
0.05
0.02
Tc=25°C
Single pulse
0.01
0.1 0.2 0.5 1 2 5 10 20 50 10
(on)
DS
is limited by R
DRAIN-SOURCE VOLTAGE : V
1ms
P
W
=10ms
DC Operation
(V)
DS
Fig.1 Maximum Safe Operating Are
V
=
10V
(V
GS(th)
3
2
1
GATE THRESHOLD VOLTAGE : V
0
−50 254015
−25 50 75 100 125
CHANNEL TEMPERATURE : T
DS
lD=1mA
ch
(°C)
Fig.4 Gate Threshold Voltage
Fig.4 vs. Channel Temperature
Ta=25
0.6
(Ω)
0.5
DS(on)
0.4
0.3
ID=2A
1A
0.2
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
Fig.7
Static Drain-Source On-State Resistanc
Fig.7
vs. Gate-Source Voltage
502
10 15
GATE-SOURCE VOLTAGE : V
Pulsed
(V)
GS
°C
4
3
(A)
D
2
1
DRAIN CURRENT : I
0
Fig.2 Typical Output Characteristic
10
5
(Ω)
2
DS(on)
1
0.5
0.2
0.1
0.05
0.02
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.01
Fig.5
Static Drain-Source On-State Resistanc
Fig.5
vs. Drain Current ( Ι )
0.8
0.7
(Ω)
DS(on)
0.6
0.5
0.4
0.3
0.2
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
Fig.8
Static Drain-Source On-State Resistanc
Fig.8
vs. Channel Temperature
10V
8V
6V
4V
DRAIN-SOURCE VOLTAGE : V
Ta=25
Pulsed
V
=3V
GS
43210
DS
V
=
GS
Pulsed
Ta=125°C
75°C
25°C
−25°C
DRAIN CURRENT : I
D
(A)
V
I
Pulsed
−25 25 75 125
0−50 15
50 100
CHANNEL TEMPERATURE : Tch
10V
250.005 0.01 0.02 0.05 0.1 0.2 0.5 1
GS
D
(V)
=
(°C)
°C
5
2
Ta=125°C
1
(A)
D
0.5
0.2
0.1
0.05
DRAIN CURRENT : I
0.02
0.01
0.005
1 345678
GATE-SOURCE VOLTAGE : V
Fig.3 Typical Transfer Characteristic
10
5
(Ω)
DS(on)
2
1
0.5
0.2
0.1
0.05
0.02
ON-STATE RESISTANCE : R
STATIC DRAIN-SOURCE
0.01
0.005 0.2
0.01 50.05 0.1 0.5
Fig.6
Static Drain-Source On-State Resistanc
Fig.6
vs. Drain Current ( ΙΙ )
10
=
10V
1A
(S
fS
5
Ta= −25°C
2
1
0.5
0.2
0.1
0.05
0.02
0.01
FORWARD TRANSFER ADMITTANCE : Y
Fig.9 Forward Transfer Admittanc
Fig.9 vs. Drain Current
2SK2094
75°C
25°C
−25°C
20
Ta=125°C
75°C
25°C
−25°C
0.02 1 2
DRAIN CURRENT : I
25°C
75°C
125°C
DRAIN CURRENT : I
(A)
D
VDS=10V
Pulsed
(A)
D
V
DS
Pulsed
(V)
GS
V
GS
Pulsed
=
10V
=
4V
250.005 0.01 0.02 0.05 0.1 0.2 0.5 1
Rev.A 3/4
Page 4
Transistors
.5
.5
0
d
5
h
0
S
5
(A)
2
DR
Ta=125°C
1
75°C
0.5
0.2
0.1
0.05
0.02
REVERSE DRAIN CURRENT : I
0.01
0.005
25°C
−25°C
0
Fig.10
Fig.10
0.5 1 1
SOURCE-DRAIN VOLTAGE : V
Reverse Drain Current
vs. Source-Drain Voltage ( Ι )
VGS=0V
Pulsed
(V)
SD
5
(A)
DR
2
1
0.5
0.2
0.1
0.05
0.02
REVERSE DRAIN CURRENT : I
0.01
01
SOURCE-DRAIN VOLTAGE : V
Fig.11
Fig.11
500
200
100
(ns)
50
20
10
SWITCHING TIME : t
5
2
0.05 0.1 0.2 0.5 1 2
0.02
DRAIN CURRENT : I
t
d(off)
Ta=25°C
V
V
R
Pulsed
t
f
t
r
t
d(on)
D
(A)
Fig.13 Switching characteristics
DD
GS
G
=30V
=10V
=10Ω
10
D=1
( t )
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r
0.001
10µ
Fig.14
Normalized Transient Thermal Resistance vs . Pulse Widt
(See Figure. 15 and 16 for
the measurement circuit an
resultant waveforms)
zSwitching characteristics measurement circuit
Ta=25
=10V
GS
V
0V
0.5 1
Pulsed
(V)
SD
Reverse Drain Current
vs. Source-Drain Voltage ( ΙΙ )
0.01
Single pulse
100
µ 1m 10m
PULSE WIDTH : PW
Pulse Width
°C
Tc=25°C
θ
θ
100
(s)
2SK2094
2000
1000
(pF)
500
200
100
CAPACITANCE : C
50
20
120
510 50
210
DRAIN-SOURCE VOLTAGE : V
Fig.12 Typical Capacitance
Fig.12 vs. Drain-Source Voltage
th(ch-c)
(t)=r (t) θ
th(ch-c)
PW
th (ch-c)
=6.25°C/W
PW
D=
T
T
m 1 1
Ta=25
f=1MHz
V
GS
Pulsed
C
iss
C
oss
C
rss
DS
=
(V)
°C
0V
V
GS
R
G
D.U.T.
I
D
R
V
Fig.15 Switching Time Test Circuit
L
DD
V
D
V
V
50%
GS
10%
DS
10%
90%
t
t
d(on)
r
t
on
Fig.16 Switching Time Waveforms
90%
t
d(off)
50%
10%
90%
t
f
t
off
Rev.A 4/4
Page 5
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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