Datasheet 2SK2075 Datasheet (HIT)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low Drive Current

• No secondary breakdown

• Suitable for Switching regulator

2SK2075

ADE-208-074

1st. Edition

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK2075

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

250 V
±30 V
20 A
80 A
20 A
100 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 9 14 — S ID = 10 A

Input capacitance Ciss — 2400 — pF VDS = 10 V
Output capacitance Coss — 970 — pF VGS = 0
Reverse transfer capacitance Crss — 145 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

250 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 200 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.105 0.13 Ω ID = 10 A

V

= 10 V*

GS

V

= 10 V*

DS

1

1

— 30 — ns ID = 10 A
— 110 — ns VGS = 10 V
— 220 — ns RL = 3 Ω
—95—ns
— 1.3 — V IF = 20 A, VGS = 0

— 330 — ns IF = 20 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK2075

3

2SK2075

160

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

50

Pulse Test

40

D

10 V

30

8 V

6 V

100

D

Maximum Safe Operation Area

30

PW = 10 ms (1shot)

DC Operation (Tc = 25 °C)

10

Operation in
this area is

3

limited by R

DS(on)

100 µs

1 ms

10 µs

1

Drain Current I (A)

0.3
Ta = 25 °C

0.1

1 3 10 30 100 300 1000

Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

40

V = 10 V

DS

Pulse Test

D

30

DS

20

Drain Current I (A)

10

0

246810

Drain to Source Voltage V (V)

5 V

4.5 V

V = 4 V

GS

DS

20

–25 °C

Drain Current I (A)

10

Tc = 25 °C

75 °C

0 246810

Gate to Source Voltage V (V)

GS

4

2SK2075

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

5

4

DS(on)

Pulse Test

3

I = 20 A

D

2

10 A

1

5 A

Drain to Source Voltage V (V)

048121620

Gate to Source Voltage V (V)

GS

Static Drain to Source on State Resistance

vs. Temperature

0.5

Ω

Pulse Test

0.4

DS(on)

R ( )

0.3
I = 20 A

D

0.2

10 A

5 A

0.1

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

5

Pulse Test

2

DS(on)

1

R ( )Ω

0.5

0.2

0.1

Drain to Source On State Resistance

0.05

V = 15 V

1 2 5 10 20 50 100

Drain Current I (A)

Forward Transfer Admittance vs.

Drain Current

100

30

–25 °C

10

3

Tc = 25 °C

75 °C

1

0.3

V = 10 V
Pulse Test

Forward Transfer Admittance |yfs| (S)

0.1

0.1 0.3 1 3 10 30 100
Drain Current I (A)

10 V

GS

D

DS

D

5

2SK2075

Body to Drain Diode Reverse

Recovery Time

500

200
100

50

20

di / dt = 100 A / µs
V = 0, Ta = 25 °C

GS

10

Reverse Recovery Time trr (ns)

5

0.05 0.1 0.2 0.5 10 20 50
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

500

I = 20 A

D

400

DS

300

200

100

Drain to Source Voltage V (V)

V

DS

V = 50 V

DD

100 V
200 V

V = 200 V

DD

100 V

50 V

V

GS

0 20406080100

Gate Charge Qg (nc)

Typical Capacitance vs.
Drain to Source Voltage

10000

1000

100

Capacitance C (pF)

V = 0

GS

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

GS

500

200

20

16

100

12

50

t

r

8

20

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

10

5

0.5 1 2 5 10 20 50
Drain Current I (A)

Ciss

Coss

Crss

DS

t

d(off)

t

f

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

D

6

DR

50

40

30

20

2SK2075

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

10

10 V

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

5 V

V = 0, –5 V

GS

SD

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.25 °C/W, Tc = 25 °C

P

DM

PW
T

100 m 1 10

Tc = 25°C

PW

D =

T

7

2SK2075

Switching Time Test Circuit Waveform

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

8

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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