Datasheet 2SK2070 Datasheet (NEC)

DATA SHEET

7.0 MAX.

1.2

2.0

9.0 MAX.12.0 MIN.

0.55 ±0.1

0.8 ±0.1

0.6 ±0.1

3.0 MAX.

0.6 ±0.1

0.6 ±0.1

1.7 1.7

1.5

4.0 MAX.

G D S

Source (S)

Internal
diode

Gate
protection
diode

Gate (G)

Drain (D)

PIN CONNECTIONS

S: Source
D: Drain
G: Gate

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

2SK2070

The 2SK2070 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.

This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.

FEATURES

• New package intermediate between small-signal and power

models

• Can be directly driven by output of 5-V IC

• Low ON resistance

DS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A

R

RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A

PACKAGE DIMENSIONS (in mm)

EQUIVALENT CIRCUIT

Document No. D11227EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS VGS = 0 100 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±1.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±3.0 A

Total Power Dissipation PT 1.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

PARAMETER SYMBOL TEST CONDITIONS RATING UNIT

Duty cycle ≤ 50 %

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 100 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.2 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 1.0 A 2.0 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 10 V, VGS = 0, 530 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 30 pF
Turn-On Delay Time td(on) VDD = 10 V, ID = 1.0 A 5 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 15 ns

RDS(on)1 VGS = 4 V, ID = 1.0 A 0.28 0.45 Ω
RDS(on)2 VGS = 10 V, ID = 1.0 A 0.24 0.35 Ω

f = 1.0 MHz

VGS(on) = 10 V, RG = 10 Ω
RL = 10 Ω

150 pF

50 ns
90 ns

2SK2070

µ

A

µ

A

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

2SK2070

FORWARD BIAS SAFE OPERATING AREA

10

80

60

40

dT - Derating Factor - %

20

0 30 60 90 120 150

TA - Ambient Temperature - ˚C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

2.0

10 V

1.6

8 V

4 V

3 V

1.2

= 2 V

GS

V

0.8

ID - Drain Current - A

0.4

5

2

PW = 100 ms

1

0.5

ID - Drain Current - A

DC

0.2

0.1

0.5 1 5 10 50 100

220

V

DS - Drain to Source Voltage - V

TRANSFER CHARACTERISTICS

10

VDS = 10 V

1

0.1

ID - Drain Current - A

0.01

1 ms

10 ms

TA = 75 ˚C
25 ˚C

–25 ˚C

0 0.2 0.4 0.6 0.8 1.0

VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

DS = 10 V

V

1

TA = –25 ˚C

25 ˚C

75 ˚C

0.1

|yfs| - Forward Transfer Admittance - S

0.01

0.001 0.003 0.01 0.1 0.3 1

0.03

D - Drain Current - A

I

0.001
0 0.5 1 1.5 2 2.5

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

0.7
V

GS = 4 V

0.6

0.5

0.4

0.3

0.2

TA = 75 ˚C

25 ˚C

–25 ˚C

0.1

0

0.01 0.03 10.3 3 10

RDS(on) - Drain to Source On-State Resistance - Ω

0.1

D - Drain Current - A

I

3

2SK2070

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

0.7
V

GS

= 10 V

0.6

0.5

0.4

TA = 75 ˚C

0.3

0.2

0.1

- Drain to Source On-State Resistance - Ω

0

DS(on)

0.01 0.03 10.3 3 10

R

25 ˚C

–25 ˚C

0.1

D

- Drain Current - A

I

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

10

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

0.5

0.4

0.3

0.2

ID = 2 A

1 A

0.1

- Drain to Source On-State Resistance - Ω

DS(on)

0

R

5101520

GS

- Gate to Source Voltage - V

V

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

1000

500

C

iss

1

0.1

0.01

- Diode Forward Current - A

SD

I

0.001

0.60.40.2

SD

- Source to Drain Voltage - V

V

0.8 1 1.2

SWITCHING CHARACTERISTICS

100

t

f

t

d(off)

50

t

20

10

- Switching Time - ns

f

, t

5

d(off)

, t

r

, t

2

d(on)

t

1

0.1 0.2 21510

0.5

f

t

d(on)

200

100

- Capacitance - pF

oss

50

, C

rss

, C

iss

C

20

VGS = 0
f = 1 MHz

10

12 2010 50 100

5

DS

- Drain to Source Voltage - V

V

C

oss

C

rss

D

- Drain Current - A

I

4

2SK2070

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

2SK2070

[MEMO]

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a customer designated “quality assurance program“ for a specific application. The recommended applications
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device before using it in a particular application.

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audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

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Anti-radioactive design is not implemented in this product.

M4 94.11