Datasheet 2SK2054 Datasheet (NEC)

DATA SHEET

2.0 ±0.2

5.7 ±0.1

3.65 ±0.1

1.0

0.5 ±0.1

0.55

2.1

4.2

0.5 ±0.1

0.85
±0.1

SDG

5.4 ±0.25

1.5 ±0.1

0.4 ±0.05

Marking: NA2

Source (S)

Internal
diode

Gate
protection
diode

Gate (G)

Drain (D)

PIN CONNECTIONS

S:
D:
G:

Source
Drain
Gate

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

2SK2054

The 2SK2054 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.

This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.

FEATURES

• New package intermediate between small-signal and power

models

• Can be directly driven by output of 5-V IC

• Low ON resistance

DS(on) = 0.25 Ω MAX. @VGS = 4 V, ID = 1.5 A

R

RDS(on) = 0.20 Ω MAX. @VGS = 10 V, ID = 1.5 A

PACKAGE DIMENSIONS (in mm)

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 60 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±3.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±6.0 A

Total Power Dissipation PT 7.5 cm2 × 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Document No. D11225EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

Duty cycle ≤ 50 %

1996

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 60 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.3 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 1.5 A 2.0 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 10 V, VGS = 0, 530 pF
Output Capacitance Coss
Reverse Transfer Capacitance Crss 50 pF
Turn-On Delay Time td(on) VDD = 10 V, ID = 1.5 A 6 ns
Rise Time tr
Turn-Off Delay Time td(off)
Fall Time tf 25 ns

RDS(on)1 VGS = 4 V, ID = 1.5 A 0.18 0.25 Ω
RDS(on)2 VGS = 10 V, ID = 1.5 A 0.15 0.20 Ω

f = 1.0 MHz

VGS(on) = 10 V, RG = 10 Ω
RL = 6 Ω

200 pF

80 ns
70 ns

2SK2054

µ

A

µ

A

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

2SK2054

FORWARD BIAS SAFE OPERATING AREA

10

PW = 1 ms

5

10 ms

60

40

dT - Derating Factor - %

20

0

30 60 90 120 150

A - Ambient Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

2.5

2.0

1.5

1.0

ID - Drain Current - A

0.5

10 V

8 V

4 V

3 V

2

100 ms

1

0.5

DC

ID - Drain Current - A

0.2
Single
Pulse

0.1

0

2 5 10 20 50 100

DS - Drain to Source Voltage - V

V

TRANSFER CHARACTERISTICS

10

DS = 10 V

V

1

0.1

TA = 75 ˚C

25 ˚C

–25 ˚C

ID - Drain Current - A

= 2 V

GS

V

0.01

0

0.2 0.4 0.6 0.8 1.0

DS - Drain to Source Voltage - V

V

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

10

DS = 10 V

V

3

1

TA = –25 ˚C

0.3

25 ˚C

0.1

0.03

|yfs| - Forward Transfer Admittance - S

0.01

0.001

0.010.003 0.03 0.1 0.3 1

D - Drain Current - A

I

75 ˚C

0.001
0

0.5 1 1.5 2 2.5

GS - Gate to Source Voltage - V

V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

0.7

GS = 4 V

V

0.6

0.5

0.4

0.3
TA = 75 ˚C

0.2

25 ˚C

–25 ˚C

0.1

0

RDS(on) - Drain to Source On-State Resistance - Ω

0.03 0.1 0.3 1 3 10

0.01

D - Drain Current - A

I

3

2SK2054

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

0.7
V

GS = 10 V

0.6

0.5

0.4

0.3

TA = 75 ˚C

25 ˚C

–25 ˚C

0.10.03 0.3 1 3 10

I

D - Drain Current - A

- Drain to Source On-State Resistance - Ω

DS(on)

R

0.2

0.1

0

0.01

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

10

1

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

0.5

0.4

0.3

ID = 3 A

1.5 A

0.2

0.1

- Drain to Source On-State Resistance - Ω

DS(on)

R

0

5101520

GS - Gate to Source Voltage - V

V

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE

1 000

500

200

Ciss

0.1

0.01

ISD - Diode Forward Current - A

0.001

0.2

0.4 0.6 0.8 1.0 1.2

SD - Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

100

50

20

10

5

2

td(on), tr, td(off), tf - Switching Time - ns

1

0.1

0.2 10.5 2 5 10

D - Drain Current - A

I

tr

td(off)

td(on)

VDD = 10 V

GS(on) = 10 V

V

100

Coss

50

Ciss, Crss, Coss - Capacitance - pF

20

10

GS = 0

V
f = 1 MHz

1

2 5 10 5020 100

DS - Drain to Source Voltage - V

V

Crss

tf

4

2SK2054

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E

5

2SK2054

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard:Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11