Page 1
DATA SHEET
2.0 ±0.2
5.7 ±0.1
3.65 ±0.1
1.0
0.5 ±0.1
0.55
2.1
4.2
0.5 ±0.1
0.85
±0.1
SDG
5.4 ±0.25
1.5 ±0.1
0.4 ±0.05
Marking: NA1
)
MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2053 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• New package intermediate between small signal and
power types
• Gate can be driven by 1.5 V
• Low ON resistance
DS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A
R
DS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A
R
PACKAGE DIMENSIONS (in mm)
EQUIVALENT CURCUIT
Drain (D)
PIN
CONNECTIONS
Source
Gate (G)
Gate
protection
diode
Internal
diode
Source (S
S:
D:
G:
Drain
Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 16 V
Gate to Source Voltage VGSS VDS = 0 ±7.0 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, duty cycle ≤ 50 % ±10.0 A
Total Power Dissipation PT 7.5 cm2 × 0.7 mm ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Operating Temperature Topt –20 to +60 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 16 V, VGS = 0 1.0
Gate Leakage Current IGSS VGS = ±7.0 V, V DS = 0 ±3.0
Gate Cut-Off Voltage VGS(off) VDS = 3 V, ID = 1 mA 0.5 0.8 1.1 V
Forward Transfer Admittance |yfs|VDS = 3 V, ID = 2.5 A 4 S
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance Ciss VDS = 3 V, VGS = 0, f = 1.0 MHz 730 pF
Output Capacitance Coss 640 pF
Reverse Transfer Capacitance Crss 230 pF
Turn-ON Delay Time td(on) VDD = 3 V, ID = 2.5 A, VGS(on) = 3 V, 85 ns
Rise Time tr
Turn-OFF Delay Time td(off) 280 ns
Fall Time tf 310 ns
RDS(on)1 VGS = 1.5 V, ID = 0.5 A 0.19 0.40 Ω
RDS(on)2 VGS = 2.5 V, ID = 2.5 A 0.08 0.15 Ω
RDS(on)3 VGS = 4.0 V, ID = 2.5 A 0.06 0.12 Ω
RG = 10 Ω, RL = 1.2 Ω
450 ns
2SK2053
µ
A
µ
A
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2053
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
- Derating Factor - %
T
d
20
0
A
- Ambient Temperature - ˚C
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
5
4
4.0 V
3.0 V
2.5 V
2.0 V
1.8 V
12030 60 90 150
FORWARD BIAS SAFE OPERATING AREA
10
5
2
1
0.5
- Drain Current - A
D
I
0.2
Single
pulse
0.1
1
2 5 10 20 50 100
V
TRANSFER CHARACTERISTICS
10
VDS = 3 V
1
PW = 1 ms
10 ms
100 ms
DC
DS
- Drain to Source Voltage - V
3
2
- Drain Current - A
D
I
1
0
0.2 0.4 0.6 0.8 1.0
DS
- Drain to Source Voltage - V
V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 3 V
3
1
TA = –25 ˚C
25 ˚C
0.3
0.1
| - Forward Transfer Admittance - S
0.03
fs
|y
0.01
0.001
0.003
0.01 0.03 0.1 0.3 1
D
- Drain Current - A
I
GS
V
= 1.5 V
75 ˚C
0.1
- Drain Current - A
D
I
0.01
0.001
0
0.5 1 1.5 2 2.5
V
GS
- Gate to Source Voltage - V
TA = 75 ˚C
25 ˚C
–25˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.7
VGS = 1.5 V
0.6
0.5
0.4
0.3
TA = 75 ˚C
0.2
0.1
RDS(on) - Drain to Source On-State Resistance - Ω
0
0.01
25 ˚C
–25 ˚C
0.10.03 0.3 1 3 10
I
D
- Drain Current - A
3
Page 4
2SK2053
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.7
VGS = 2.5 V
0.6
0.5
0.4
0.3
0.2
TA = 75 ˚C
25 ˚C
–25 ˚C
0.1
0
RDS(on) - Drain to Source On-State Resistance - Ω
0.01
0.03 0.1 0.3 1 3 10
D - Drain Current - A
I
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.5
0.4
ID = 1 A, 2.5 A
0.3
5 A
0.2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.7
VGS = 4.0 V
0.6
0.5
0.4
0.3
TA = 75 ˚C
0.2
25 ˚C
–25 ˚C
0.1
0
RDS(on) - Drain to Source On-State Resistance - Ω
0.01
0.03 0.1 0.3 1 3 10
D - Drain Current - A
I
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
1
0.1
0.1
RDS(on) - Drain to Source On-State Resistance - Ω
0
V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1 000
500
200
100
50
Ciss, Crss, Coss - Capacitance - pF
20
10
1
2 5 10 20 50 100
V
246
GS - Gate to Source Voltage - V
Ciss
Coss
Crss
GS = 0
V
f = 1 MHz
DS - Drain to Source Voltage - V
0.01
ISD - Diode Forward Current - A
0.001
0.2
0.4 0.6 0.8 1.0 1.2
SD - Source to Drain Voltage - V
V
SWITCHING CHARACTERISTICS
1 000
500
200
100
50
20
td(on), tr, td(off), tf - Switching Time - ns
10
0.1
0.2 0.5 1 2 5 10
D - Drain Current - A
I
tr
tf
td(off)
td(on)
VDD = 3 V
GS(on) = 3 V
V
4
Page 5
2SK2053
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
5
Page 6
2SK2053
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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