Datasheet 2SK2007 Datasheet (HIT)

2SK2007

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No Secondary Breakdown

• Suitable for Switching regulator, DC - DC converter, Motor Control

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK2007

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

250 V
±30 V
20 A
80 A
20 A
100 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 9.0 14 — S ID = 10 A

Input capacitance Ciss — 2340 — pF VDS = 10 V
Output capacitance Coss — 1000 — pF VGS = 0
Reverse transfer capacitance Crss — 160 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

250 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS =200 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.12 0.15 Ω ID = 10 A

V

= 10 V*

GS

V

= 10 V*

DS

1

1

— 30 — ns ID = 10 A
— 125 — ns VGS = 10 V
— 190 — ns RL = 3 Ω
— 100 — ns
— 1.2 — V IF = 20 A, VGS = 0

— 120 — ns IF = 20 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK2007

3

2SK2007

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0

50 100 150

Case Temperature Tc (°C)

Typical Output Characteristics

50

10 V

8 V

40

D

30

Pulse Test

6 V

5.5 V

100

Maximum Safe Operation Area

100 s

30

D

10

DC Operation (Tc = 25°C)

1 ms

PW = 10 ms (1 shot)

3

Operation in this

1

Drain Current I (A)

area is limited
by R (on)

DS

0.3
Ta = 25°C

0.1

1 3 10 30 100 300 1000

Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

V = 10 V

DS

Pulse Test

40

D

30

10 s

µ

µ

DS

20

Drain Current I (A)

10

0

4 8 12 16 20

Drain to Source Voltage V (V)

5 V

V = 4 V

GS

DS

20

Drain Current I ( A )

10

0

2

Gate to Source Voltage V (V)

–25°C
Tc = 25°C
75°C

46

810

GS

4

2SK2007

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

5

4

Pulse Test

3

DS

2

V (on) (V)

20 A

10 A

1

I = 5 A

D

Drain to Source Saturation Voltage

0

4

81216

Gate to Source Voltage V (V)

Static Drain to Source On State

Resistance vs. Temperature

0.5

V = 10V

0.4

Ω

0.3

DS

GS

Pulse Test

I = 20 A

D

0.2

0.1

Resistance R (on) ( )

Static Drain to Source On State

0

–40 0

40

80

Case Temperature Tc (°C)

GS

5 A
10 A

120

20

160

Static Drain to Source On State

Resistance vs. Drain Current

5

2

Ω

1

DS

0.5

0.2

Resistance R (on) ( )

0.1

Static Drain to Source On State

0.05
2 5 10 20 50 100

1

Drain Current I (A)

Forward Transfer Admittance

vs. Drain Current

100

30

Tc = 25°C

10

3

| yfs | (S)

1

V = 10 V

DS

Pulse Test

0.3

Forward Transfer Admittance

0.1

0.1 0.3 1 3 10 30 100
Drain Current I (A)

V = 10 V

GS

D

–25°C

75°C

D

15 V

5

2SK2007

Body to Drain Diode Reverse

Recovery Time

500

µ

rr

di/dt = 100 A/ s
V = 0, Ta = 25°C

200

GS

100

50

20

10

Reverse Recovery Time t (ns)

5

0.5 1 2 5 10 20 50
Reverse Drain Current I (A)

Dynamic Input Characteristics

500

I = 20 A

D

400

DS

V = 50 V

DD

100 V

300

200 V

200

V = 200 V

100

Drain to Source Voltage V (V)

DD

100 V

50 V

0

0 20406080100

Gate Charge Qg (nc)

DR

10000

1000

100

Capacitance C (pF)

V = 0

GS

f = 1 MHz

1

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

GS

500

200

20

16

100

12

50

t

r

8

20

4

Switching Time t (ns)

10

Gate to Source Voltage V (V)

0

5

0.5 1 2 5 10 20 50

Typical Capacitance vs.

Drain to Source Voltage

Ciss

Coss

Crss

DS

t (off)

d

t

f

t (on)

d

=

V = 10 V, V 30 V

GS DD

PW = 5 s, duty 1%

µ

Drain Current I (A)

:

<

=

D

6

50

2SK2007

Reverse Drain Current vs.

Source to Drain Voltage

(t)

S

Normalized Transient Thermal Impedance γ

3

1.0

0.3

0.1

0.03

0.01
10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

DR

40

Pulse Test

30

20

10

Reverse Drain Current I (A)

0

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

10 V

V = 0, –5 V

GS

0.4 0.8 1.2 1.6

Source to Drain Voltage V (V)

Pulse Width PW (s)

SD

2.0

θch–c (t) = γ
θch–c = 1.25°C/W, T

P

DM

S

PW

T

(t) · θch–c

T

C

= 25°C

= 25°C

C

D =

PW

T

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
10 V

D.U.T

Vout Monitor

R

L

V

DD

.

=

30 V

.

t

d (on)

Vin

Vout

10%

10%

Waveforms

90%

t

r

t

d (off)

90%

90%

10%

t

f

7

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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