Datasheet 2SK1971 Datasheet (HIT)

2SK1971

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No Secondary Breakdown

• Suitable for Switching regulator, DC - DC converter, Motor Control

Outline

TO-3PL

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1971

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

500 V
±30 V
35 A
140 A
35 A
200 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs|1624—SI

Input capacitance Ciss — 4320 — pF VDS = 10 V
Output capacitance Coss — 1120 — pF VGS = 0
Reverse transfer capacitance Crss — 130 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

500 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS =400 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.19 0.23 Ω ID = 18 A

V

= 10 V*

GS

= 18 A

D

V

= 10 V*

DS

1

1

— 50 — ns ID = 18A
— 170 — ns VGS = 10 V
— 320 — ns RL = 1.67Ω
— 130 — ns
— 1.1 — V IF =35 A, VGS = 0

— 530 — ns IF = 35 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK1971

3

2SK1971

Power vs. Temperature Derating

300

200

100

Channel Dissipation Pch (W)

0 10050 150

Case Temperature Tc (°C)

Typical Output Characteristics

50

10 V

40

D

30

6 V

5.5 V

Pulse Test

5 V

20

Drain Current I (A)

10

4.5 V

V = 4 V

GS

1000

Maximum Safe Operation Area

Operation in this area is
limited by R (on)

300

DS

100

D

30

DC Operation (Tc = 25°C)

10

3
1

Drain Current I (A)

0.3

Ta = 25°C

0.1
1 30 100

3 10 300 1000

Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

40

D

30

Tc = 25°C

20

75°C

Drain Current I (A)

10

10 s

PW = 10 ms (1 Shot)

100 s

µ

1 ms

DS

V = 20 V

DS

Pulse Test

–25°C

µ

0 1020304050

Drain to Source Voltage V (V)

DS

0246810

Gate to Source Voltage V (V)

GS

4

2SK1971

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

20

Pulse Test

16

12

8

DS

V (on) (V)

4

I = 10 A

D

Drain to Source Saturation Voltage

0481216

Gate to Source Voltage V (V)

Static Drain to Source on State

Resistance vs. Temperature

1.0

Ω

0.8

Pulse Test

V = 10 V

GS

50 A

20 A

GS

20

Static Drain to Source on State

Resistance vs. Drain Current

5

Ω

2

Pulse Test

1

DS

0.5
V = 10 V

0.2

GS

Resistance R (on) ( )

0.1

Static Drain to Source on State

0.05
2102050

5

Drain Current I (A)

Forward Transfer Admittance

vs. Drain Current

50

–25°C

20

Tc = 25°C

100 200

D

DS

0.6

0.4

Static Drain to Source on

0.2

State Resistance R (on) ( )

0

–40

0 40 80 120

Case Temperature Tc (°C)

I = 50 A

D

20 A

10 A

160

10

5

fs

| y | (S)

2
1

Forward Transfer Admittance

0.5
1 2 5 10 50 10020

Drain Current I (A)

75°C

V = 20 V

DS

Pulse Test

D

5

2SK1971

Body to Drain Diode Reverse

Recovery Time

1000

500

rr

200
100

50

di/dt = 100 A/ s, V = 0
Ta = 25°C

20

µ

GS

Reverse Recovery Time t (ns)

10

0.5 1 2 5 10 20 50
Reverse Drain Current I (A)

Dynamic Input Characteristics

1000

800

DS

V = 400 V

DD

250 V

V

100 V

600

V

DS

400

200

Drain to Source Voltage V (V)

0

V = 400 V

DD

250 V

100 V

40 80 120 160 200

Gate Charge Qg (nc)

DR

GS

I = 35 A

D

Typical Capacitance

vs. Drain to Source Voltage

10000

1000

100

Capacitance C (pF)

V = 0

GS

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

GS

1000

500

200

t

f

20

16

12

100

8

4

0

50

Switching Time t (ns)

Gate to Source Voltage V (V)

V = 10 V, V = 30 V

GS

20

µ

Pw = 5 s, duty 1%

10

0.5 1 2 5 10 20 50
Drain Current I (A)

DD

t (off)

d

:

<

=

Ciss

Coss

Crss

t

r

t (on)

d

D

DS

6

DR

50

40

30

2SK1971

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

(t)

S

Normalized Transient Thermal Impedance γ

3

1.0

0.3

0.1

0.03

0.01
10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

20

V = 0, –5 V

GS

V = 10 V

GS

10

Reverse Drain Current I (A)

0

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Width PW (s)

SD

TC = 25°C

θch–c (t) = γ
θch–c = 0.625°C/W, T

P

DM

(t) · θch–c

S

PW

T

= 25°C

C

D =

PW

T

7

2SK1971

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
10 V

D.U.T

Vout Monitor

R

L

V

DD

.

=

30 V

.

Vin

Vout

t

d (on)

Waveforms

10%

10%

90% 90%

t

r

td

(off)

90%

10%

t

f

8

Unit: mm

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

5.45 ± 0.5

20.0 ± 0.3
φ3.3 ± 0.2

1.4

3.0

2.2

+0.25

1.2

–0.1

5.45 ± 0.5

1.0

3.8

7.4

0.6

+0.25
–0.1

5.0 ± 0.2

2.8 ± 0.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-3PL
—
—

9.9 g

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