Datasheet 2SK1968 Datasheet (HIT)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• No secondary breakdown

• Suitable for Switching regulator

• Low drive current

2SK1968

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1968

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body to drain diode reverse drain current I Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

600 V ±30 V 12 A 48 A 12 A 100 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage Gate to source breakdown

V

(BR)GSS

voltage Gate to source leak current I Zero gate voltage drain current I Gate to source cutoff voltage V Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance Forward transfer admittance |yfs| 5 10 — S ID = 6 A

Input capacitance Ciss — 1800 — pF VDS = 10 V Output capacitance Coss — 400 — pF VGS = 0 Reverse transfer capacitance Crss — 60 — pF f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage Body to drain diode reverse

t

rr

recovery time Note 1. Pulse Test

600 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0 — — 250 µAVDS = 500 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V — 0.68 0.88 Ω ID = 6 A

V

= 10 V*

GS

V

= 10 V*

DS

1

— 25 — ns ID = 6 A — 70 — ns VGS = 10 V — 145 — ns RL = 5 Ω —65—ns — 1.1 — V IF = 12 A, VGS = 0

— 670 — ns IF = 12 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK1968

3

2SK1968

200

Power vs. Temperature Derating

150

100

50

Power Dissipation Pch (W)

0 50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

20

10 V

16

D

12

6 V

Pulse test

5 V

4.5 V

8

100

Maximum Safe Operation Area

10 µs

30

10

D

PW = 10 ms(1 shot)

DC Operation (Tc = 25°C)

100 µs

1 ms

3

Operation in this area

1

is limited by R

DS(on)

Drain Current I (A)

0.3 Ta = 25°C

0.1

5 10 30 100 300 1000

Drain to Source Voltage V (V)

DS

Typical Transfer Characteristics

20

Pulse test V = 20 V

DS

16

D

12

Tc = 75°C

8

25°C

Drain Current I (A)

4

V = 4 V

GS

0 1020304050

Drain to Source Voltage V (V)

4

DS

Drain Current I (A)

4

0 246810

–25°C

Gate to Source Voltage V (V)

GS

2SK1968

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

20

Pulse test

16

DS(on)

V (V)

12

8

4

15 A

10 A

I = 5 A

D

Drain to Source Saturation Voltage

048121620

Gate to Source Voltage V (V)

GS

Static Drain to Source on State

Resistance vs. Temperature

2.0 Pulse test

Ω

V = 10 V

GS

1.6

DS(on)

R ( )

1.2

0.8

10 A

I = 5 A

D

0.4

Static Drain to Source on State

Resistance vs. Drain Current

5

2

DS(on)

R ( )Ω

V = 10 V

GS

1

0.5

0.2 Pulse test

0.1

Static Drain to Source on State Resistance

1 2 5 10 20 50 100

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

Pulse test

fs

V = 20 V

DS

20

10

5

2

Tc = –25°C

25°C

75°C

1

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Gate to Source Voltage V (V)

GS

0.5

Forward Transfer Admittance |y | (S)

0.1 0.2 0.5 1 2 5 10 Drain Current I (A)

D

20

5

2SK1968

Body to Drain Diode Reverse

Recovery Time

3000 2000

di/dt = 100 A/µs V = 0, Ta = 25°C

GS

rr

1000

500

200

Reverse Recovery Time t (ns)

100

0.1 0.2 0.5 1 2 5 10 Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

1000

I = 12 A

DS

800

D

V = 100 V

DD

250 V

V

GS

400 V

600

V

DS

400

V = 400 V

200

DD

250 V

Drain to Source Voltage V (V)

100 V

0 20406080100

Gate Charge Qg (nc)

Typical Capacitance vs. Drain to

5000

2000 1000

500

200 100

50

Capacitance C (pF)

20 10

20

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

300 200

16

GS

100

12

50

8

4

20

Switching Time t (ns)

Gate to Source Voltage V (V)

0

10

0.1 0.2 0.5 1 2 5 10 Drain Current I (A)

Source Voltage

Ciss

Coss

V = 0 f = 1 MHz

Crss

td(off)

tf

tr

V = 10 V, PW = 5 µs

GS

duty 1 %, V 30 V

td(on)

DD

D

GS

DS

20

6

Reverse Drain Current vs. Source to

Drain Voltage

20

Pulse test

16

DR

2SK1968

3

s (t)

1

γ

0.3

0.1

D = 1

0.5

0.2

0.1

0.05

12

V = 0, –5 V

GS

8

10 V

4

Reverse Drain Current I (A)

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Normal Transient Thermal Impedance vs. Pusle Width

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.25 °C/W, Tc = 25 °C

0.02

0.03

Normalized Transient Thermal Impedance

0.01

1 shot Pulse

0.01 10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

P

DM

PW

T

D =

100 m 1 10

PW

T

7

2SK1968

Switching Time Test Circuit and Waveform

90%

Vin Monitor

Vin 10 V

50Ω

D.U.T.

R

L

V = 30 V

Vout Monitor

DD

t

d(on)

Vin

10%

90%

t

r

t

d(off)

90%

10%Vout

t

f

8

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code JEDEC EIAJ Weight

(reference value)

TO-3P — Conforms

5.0 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223

Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533

Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX