Datasheet 2SK1948 Datasheet (HIT)

2SK1948

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low Drive Current

• No Secondary Breakdown

• Suitable for Switching regulator, Motor Control

Outline

TO-3PL

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1948

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body to drain diode reverse drain current I Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

250 V ±30 V 50 A 200 A 50 A 200 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage Gate to source breakdown

V

(BR)GSS

voltage Gate to source leak current I Zero gate voltage drain current I Gate to source cutoff voltage V Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance Forward transfer admittance |yfs|2030—SI

Input capacitance Ciss — 5830 — pF VDS = 10 V Output capacitance Coss — 2310 — pF VGS = 0 Reverse transfer capacitance Crss — 265 — pF f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage Body to drain diode reverse

t

rr

recovery time Note 1. Pulse Test

250 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0 — — 250 µAVDS = 200 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V — 0.047 0.06 Ω ID = 25 A

V

= 10 V*

GS

= 25 A

D

V

= 10 V*

DS

1

— 70 — ns ID = 25 A — 260 — ns VGS = 10 V — 430 — ns RL = 1.2 Ω — 190 — ns — 1.2 — V IF = 50 A, VGS = 0

— 450 — ns IF = 50 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK1948

3

2SK1948

Power vs. Temperature Derating

300

200

100

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature Tc (°C)

Typical Output Characteristics

100

10 V

8 V

Pulse Test

80

D

6 V

60

5.5 V

40

Drain Current I (A)

20

5 V

4 V

V = 3.5 V

GS

1000

Maximum Safe Operation Area

300 100

D

Operation in this area

in limited by R (on)

30

DS

PW = 10 ms (1 Shot)

DC Operation (Tc = 25°C)

10

3

Drain Current I (A)

1

0.3 Ta = 25°C

0.1

1 3 10 100

Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

Pulse Test

40

V = 10 V

DS

D

30

20

Drain Current I (A)

10

Tc = 25°C

–25°C

10 s

100 s

µ

1 ms

30 300 1000

DS

75°C

048121620

Drain to Source Voltage V (V)

DS

0

246810

Gate to Source Voltage V (V)

GS

4

2SK1948

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

5

4

Pulse Test

3

50 A

2

DS

V (on) (V)

1

20 A

I = 10 A

D

Drain to Source Saturation Voltage

4 8 12 16 200

Gate to Source Voltage V (V)

Static Drain to Source on State

Resistance vs. Temperature

0.2

Ω

DS

0.16

0.12

V = 10 V

GS

Pulse Test

0.08

Resistance R (on) ( )

0.04

Static Drain to Source on State

GS

I = 50 A

D

10 A, 20 A

Static Drain to Source on State

Resistance vs. Drain Current

0.5

0.2

Pulse Test

Ω

0.1

DS

0.05

V = 10 V

GS

0.02

Resistance R (on) ( )

0.01

Static Drain to Source on State

0.005 2

5 10 20 50 100 200

Drain Current I (A)

Forward Transfer Admittance

vs. Drain Current

100

V = 10 V

50 20

10

|yfs| (S)

DS

Pulse Test

Tc = 25°C

–25°C

5

Forward Transfer Admittance

2

D

75°C

0 –40 0 40 80 120

Case Temperature T (°C)

C

160

1

1 5 20 50

0.5 2 10 Drain Current I (A)

D

5

2SK1948

Body to Drain Diode Reverse

Recovery Time

5000

2000

rr

1000

di/dt = 100 A/ s, V = 0 Ta = 25°C

µ

500 200

100

Reverse Recovery Time t (ns)

50

1 5 20 100

21050

Reverse Drain Current I (A)

Dynamic Input Characteristics

DS

500

400

V = 200 V

DD

V

GS

100 V

300

V

50 V

DS

200

V = 200 V

100

Drain to Source Voltage V (V)

0

80 160 240 320 400

DD

100 V

50 V

Gate Charge Qg (nc)

GS

DR

I = 50 A

D

10000

1000

100

Capacitance C (pF)

V = 0

GS

f = 1 MHz

10

0

Drain to Source Voltage V (V)

GS

1000

500

200

20

16

12

100

8

50

4

Switching Time t (ns)

20

Gate to Source Voltage V (V)

0

10

0.5

Typical Capacitance vs. Drain to Source Voltage

Ciss

Coss

Crss

10 20 30 40 50

DS

Switching Characteristics

t (off)

d

t

DD

r

t (on)

d

=

:

t

f

V = 10 V, V 30 V

GS

PW = 5 s

µ

12 5102050

Drain Current I (A)

D

6

Reverse Drain Current vs.

Source to Drain Voltage

50

Pulse Test

40

DR

30

V = 10 V

20

GS

0, –5 V

10

Reverse Drain Current I (A)

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

2SK1948

(t)

S

Normalized Transient Thermal Impedance γ

0.3

0.1

0.03

0.01

3

1

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

TC = 25°C

θch–c (t) = γ θch–c = 0.625°C/W, T

P

DM

(t) · θch–c

S

PW

T

= 25°C

C

D =

PW

T

7

2SK1948

Switching Time Test Circuit

Vin Monitor

Vin 10 V

50 Ω

D.U.T.

Vout Monitor

R

L

.

=

V

30 V

.

DD

t

d (on)

Vin

Vout

Waveforms

10%

90% 90%

t

r

90%

10%

td

(off)

t

f

8

Unit: mm

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

5.45 ± 0.5

20.0 ± 0.3 φ3.3 ± 0.2

1.4

3.0

2.2

+0.25

1.2

–0.1

5.45 ± 0.5

1.0

3.8

7.4

0.6

+0.25 –0.1

5.0 ± 0.2

2.8 ± 0.2

Hitachi Code JEDEC EIAJ

(reference value)

Weight

TO-3PL — —

9.9 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

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