Datasheet 2SK1947 Datasheet (HIT)

2SK1947

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low Drive Current

• Built-In Fast Recovery Diode (trr = 140 ns)

• Suitable for Switching regulator, Motor Control

Outline

TO-3PL

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1947

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

250 V
±30 V
50 A
200 A
50 A
200 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs|2030—SI

Input capacitance Ciss — 5810 — pF VDS = 10 V
Output capacitance Coss — 2360 — pF VGS = 0
Reverse transfer capacitance Crss — 270 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

250 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 200 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.047 0.06 Ω ID = 25 A

V

= 10 V*

GS

= 25 A

D

V

= 10 V*

DS

1

1

— 75 — ns ID = 25 A
— 270 — ns VGS = 10 V
— 420 — ns RL = 1.2 Ω
— 200 — ns
— 1.2 — V IF = 50 A, VGS = 0

— 140 — ns IF = 50 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK1947

3

2SK1947

Power vs. Temperature Derating

300

200

100

Channel Dissipation Pch (W)

0

50 100 150

Case Temperature Tc (°C)

Typical Output Characteristics

100

8 V10 V

80

D

60

6 V

5.5 V

1000

Maximum Safe Operation Area

D

300
100

PW = 10 ms (1 shot)

DC Operation (Tc = 25°C)

100 s

1 ms

10 s

30
10

Operation in this
area is limited
by R (on)

3

Drain Current I (A)

1

0.3

DS

Ta = 25°C

0.1
1 3 10 30 100 300 1000

Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

V = 10 V

40

D

30

DS

Pulse Test

µ

µ

DS

40

Drain Current I (A)

20

0

4 8 12 16 20

Drain to Source Voltage V (V)

5 V

4 V

V = 3.5 V

GS

DS

20

Tc = 25°C

Drain Current I ( A )

10

75°C

0

2

Gate to Source Voltage V (V)

–25°C

46

810

GS

4

2SK1947

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

5

Pulse Test

4

3

50 A

2

DS

V (on) (V)

1

20 A

I = 10 A

D

Drain to Source Saturation Voltage

0

4

81216

Gate to Source Voltage V (V)

Static Drain to Source on State

Resistance vs. Temperature

0.20

Ω

DS

0.16

0.12

Pulse Test
V = 10 V

GS

I = 50 A

D

0.08

0.04

Resistance R (on) ( )

Static Drain to Source on State

0

–40 0

40

80

Case Temperature Tc (°C)

20

GS

10 A, 20 A

120

Static Drain to Source on State

Resistance vs. Drain Current

0.5
Pulse Test

0.2

Ω

0.1

DS

0.05

0.02

Resistance R (on) ( )

0.01

Static Drain to Source on State

0.005
2

Forward Transfer Admittance

100

Pulse Test
V = 10 V

50

DS

20
10

| yfs | (S)

5

2

Forward Transfer Admittance

1

160

0.5 1 2 5 10 20 50

V = 10 V

GS

5 10 20 50 100 200

Drain Current I (A)

D

vs. Drain Current

Tc = 25°C

–25°C

Drain Current I (A)

75°C

D

5

2SK1947

Body to Drain Diode Reverse

Recovery Time

500

rr

200

di/dt = 100 A/ s
V = 0, Ta = 25°C

GS

µ

100

50

20
10

Reverse Recovery Time t (ns)

5

1 2 5 10 20 50 100

Reverse Drain Current I (A)

Dynamic Input Characteristics

500

V = 200 V

DD

DS

400

300

100 V

50 V

I = 50 A

V

DS

200

Typical Capacitance

vs. Drain to Source Voltage

10000

1000

100

Ciss

Coss

Crss

Capacitance C (pF)

V = 0

GS

f = 1 MHz

10

0 1020304050

DR

Drain to Source Voltage V (V)

DS

Switching Characteristics

GS

1000

500

200

100

t (off)

d

t

t

f

r

t (on)

d

20

V

GS

16

D

12

8

50

V = 200 V

100

DD

100 V

Drain to Source Voltage V (V)

0

80 160 240 320 400

50 V

Gate Charge Qg (nc)

6

4

0

Switching Time t (ns)

Gate to Source Voltage V (V)

V = 10 V, V 30 V

20

PW = 2 s, duty 1%

10

0.5 1 2 5 10 20 50

GS

DD

µ

Drain Current I (A)

=

:

<

=

D

DR

(s)

50

40

30

20

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

V = 10 V

GS

2SK1947

(t)

S

Normalized Transient Thermal Impedance γ

0.3

0.1

0.03

0.01

3

1

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

10

0, –5 V

Reverse Drain Current I (A)

0

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

0.4 0.8 1.2 1.6

Source to Drain Voltage V (V)

Pulse Width PW

SD

2.0

θch–c (t) = γ
θch–c = 0.625°C/W, T

P

DM

T

TC = 25°C

(t) · θch–c

S

PW

= 25°C

C

D =

PW

T

7

2SK1947

Switching Time Test Circuit

Vin Monitor

Vin
10 V

50 Ω

D.U.T.

Vout Monitor

R

L

.

=

V

30 V

.

DD

Vin

Vout

t

d (on)

Waveforms

10%

10%

90% 90%

t

r

td

(off)

90%

10%

t

f

8

Unit: mm

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

5.45 ± 0.5

20.0 ± 0.3
φ3.3 ± 0.2

1.4

3.0

2.2

+0.25

1.2

–0.1

5.45 ± 0.5

1.0

3.8

7.4

0.6

+0.25
–0.1

5.0 ± 0.2

2.8 ± 0.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-3PL
—
—

9.9 g

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