Page 1
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• No secondary breakdown
• Suitable for Switching regulator
2SK1934
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
Page 2
2SK1934
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
1000 V
±30 V
8A
24 A
8A
150 W
2
Page 3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs|46—SI
Input capacitance Ciss — 2690 — pF VDS = 10 V
Output capacitance Coss — 920 — pF VGS = 0
Reverse transfer capacitance Crss — 375 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
1000 — — V ID = 10 mA, VGS = 0
±30 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 800 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 1.2 1.6 Ω ID = 4 A
V
= 10 V*
GS
= 4 A
D
V
= 20 V*
DS
1
1
— 35 — ns ID = 4 A
— 135 — ns VGS = 10 V
— 300 — ns RL = 7.5 Ω
— 205 — ns
— 0.9 — V IF = 8 A, VGS = 0
— 1600 — µsI
= 8 A, VGS = 0,
F
di
/ dt = 100 A / µs
F
2SK1934
3
Page 4
2SK1934
Power vs. Temperature Derating
150
100
50
Channel Dissipation Pch (W)
0
50 100 150
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8 V
Pulse Test
8
D
6
5 V
Maximum Safe Operation Area
50
30
10
D
3
Operation in this area
is limited by R
DS(on)
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
1
Drain Current I (A)
0.3
Ta = 25°C
0.1
0.05
1 3 10 30 100 300 1000
Drain to Source Voltage V (V)
Typical Transfer Characteristics
10
Pulse Test
8
V = 20 V
DS
D
6
1 ms
DS
10 s
µ
100 s
µ
4
Drain Current I (A)
2
10
0
V = 3.5 V
GS
20 30 40 50
Drain to Source Voltage V (V)
4 V
DS
Tc = 25°C
4
Drain Current I (A)
2
75°C
0
246810
Gate to Source Voltage V (V)
–25°C
GS
4
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2SK1934
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4
DS
V (on) (V)
5 A
2 A
0.2
I = 1 A
D
Drain to Source Saturation Voltage
0
4 8 12 16 20
Gate to Source Voltage V (V)
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
4
Ω
3
DS
I = 5 A
D
2
1
Resistance R (on) ( )
Static Drain to Source on State
0
–40 0 40 80 120 160
Case Temperature T (°C)
C
GS
1 A
2 A
Static Drain to Source on State
Resistance vs. Drain Current
50
Ω
20
10
DS
Pulse Test
5
2
V = 10 V
Resistance R (on) ( )
1
Static Drain to Source on State
GS
0.5
0.2 0.5 1 2 5 10 20
Drain Current I (A)
D
Forward Transfer Admittance
vs. Drain Current
50
20
Pulse Test
V = 20 V
DS
10
Tc = 25°C
5
fs
|y | (S)
2
1
Forward Transfer Admittance
–25°C
0.5
0.1
0.2 0.5 1 5 102
Drain Current I (A)
D
75°C
5
Page 6
2SK1934
Body to Drain Diode Reverse
Recovery Time
5000
µ
GS
2000
rr
di/dt = 100 A/ s, V = 0
Ta = 25°C
1000
500
200
100
Reverse Recovery Time t (ns)
50
0.2 0.5 1 2 5 10 20
Reverse Drain Current I (A)
Dynamic Input Characteristics
1000
800
DS
V = 250 V
DD
400 V
V
GS
600 V
600
V
DS
I = 8 A
D
400
200
Drain to Source Voltage V (V)
V = 250 V
DD
400 V
600 V
0 40 80 120 160 200
Gate Charge Qg (nc)
DR
Typical Capacitance
vs. Drain to Source Voltage
10000
1000
100
Capacitance C (pF)
V = 0 V
GS
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V (V)
Switching Characteristics
GS
500
200
20
16
100
12
50
8
20
4
0
Switching Time t (ns)
10
Gate to Source Voltage V (V)
5
V = 10 V, V = 30 V
GS
PW = 5 s, duty 1%
0.1 0.2 0.5 1 2 5 10
Drain Current I (A)
t (off)
d
t
f
t
r
t (on)
d
µ
Ciss
Coss
Crss
DD
DS
.
:
>
=
D
6
Page 7
DR
2SK1934
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
4
(t)
S
Normalized Transient Thermal Impedance γ
1.0
0.3
0.1
0.03
0.01
3
10 µ
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
2
V = 10 V
GS
0, –5 V
Reverse Drain Current I (A)
0.2
0
Source to Drain Voltage V (V)
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ 10 m 100 m 1 101 m
0.4 0.6 0.8
SD
Pulse Width PW (s)
1.0
TC = 25°C
θch–c (t) = γS (t) · θch–c
θch–c = 0.83°C/W, T
P
DM
PW
T
C
= 25°C
PW
D =
T
7
Page 8
2SK1934
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50 Ω
D.U.T.
Vout Monitor
R
L
V
DD
.
=
30 V
.
t
d (on)
Vin
Vout
Waveforms
10%
10%
90% 90%
t
r
td
(off)
90%
10%
t
f
8
Page 9
1.6
0.5
15.6 ± 0.3
φ3.2 ± 0.2
1.0
2.0
Unit: mm
4.8 ± 0.2
1.5
5.0 ± 0.3
19.9 ± 0.2
14.9 ± 0.2
0.3
1.4 Max
3.6
2.0
0.9
1.0
1.0 ± 0.2
5.45 ± 0.55.45 ± 0.5
18.0 ± 0.5
2.8
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-3P
—
Conforms
5.0 g
Page 10
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