Datasheet 2SK1933 Datasheet (HIT)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• No secondary breakdown

• Suitable for Switching regulator

2SK1933

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1933

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

900 V
±30 V
10 A
30 A
10 A
150 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 4.5 7 — S ID = 5 A

Input capacitance Ciss — 2620 — pF VDS = 10 V
Output capacitance Coss — 830 — pF VGS = 0
Reverse transfer capacitance Crss — 320 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body tp drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

900 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 720 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.9 1.2 Ω ID = 5 A

V

= 10 V*

GS

V

= 20 V*

DS

1

1

— 30 — ns ID = 5 A
— 140 — ns VGS = 10 V
— 285 — ns RL = 6 Ω
— 170 — ns
— 0.9 — V IF = 10 A, VGS = 0

— 1600 — ns IF = 10 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK1933

3

2SK1933

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0 10050 150

Case Temperature Tc (°C)

Typical Output Characteristics

10

10 V

6 V

Pulse Test

8

D

5 V

6

Maximum Safe Operation Area
50
30

10

D

3

Operation

in this area is

1

0.3

Drain Current I (A)

DS

limited by R (on)

0.1

0.05
3 10 300 1000

1 30 100

Drain to Source Voltage V (V)

Typical Transfer Characteristics

10

Pulse Test
V = 20 V

DS

8

D

6

Tc = 25°C

10 s

µ

100 s

1 ms

DS

µ

PW = 10 ms (1 Shot)

DC Operation (Tc = 25°C)

4

4 V

Drain Current I (A)

2

V = 3.5 V

GS

0 1020304050

Drain to Source Voltage V (V)

DS

4

75°C

Drain Current I (A)

2

–25°C

0246810

Gate to Source Voltage V (V)

GS

4

2SK1933

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

1.0

Pulse Test

0.8

0.6

DS

0.4

Voltage V (on) (V)

0.2

Drain to Source Saturation

0481216

Gate to Source Voltage V (V)

Static Drain to Source on State

Resistance vs. Temperature

2.5
Pulse Test

V = 10 V

Ω

2

GS

5 A

2 A

I = 1 A

D

GS

I = 5 A

D

2 A

20

Static Drain to Source on State

Resistance vs. Drain Current

10

Pulse Test

5

Ω

2

DS

1

V = 10 V

GS

0.5

Resistance R (on) ( )

0.2

Static Drain to Source on State

0.1

0.5 5

1 2 10 20

Drain Current I (A)

Forward Transfer Admittance

vs. Drain Current

50

Pulse Test
V = 20 V

20

DS

50

D

1.5

DS

1

0.5

Resestance R (on) ( )

Static Drain to Source on State

0

–40 0 40 80 120

Case Temperature Tc (°C)

1 A

160

10

5

fs

| y | (S)

2
1

Forward Transfer Admittance

Tc = 25°C

–25°C

0.5

0.1 0.2 0.5 1 5 102
Drain Current I (A)

75°C

D

5

2SK1933

Body to Drain Diode Reverse

Recovery Time

5000

2000

rr

1000

500

200

100

di/dt = 100 A/ s, V = 0

µ

GS

Ta = 25°C

Reverse Recovery Time t (ns)

50

0.1 0.2 0.5 1 2 5 10
Reverse Drain Current I (A)

Dynamic Input Characteristics

1000

800

DS

V = 250 V

DD

400 V

V

GS

600 V

V

600

DS

400

200

Drain to Source Voltage V (V)

0

V = 250 V

DD

400 V

600 V

40 80 120 160 200

Gate Charge Qg (nc)

DR

I = 8 A

D

Typical Capacitance

vs. Drain to Source Voltage

10000

1000

100

Capacitance C (pF)

V = 0

GS

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

GS

500

200

100

20

16

12

50

8

20

4

0

Switching Time t (ns)

Gate to Source Voltage V (V)

V = 10 V, V = 30 V

10

GS

PW = 5 s, duty 1%

5

0.2 0.5 1 2 5 10 20
Drain Current I (A)

Ciss

Coss

Crss

DS

t (off)

d

t

f

t

r

t (on)

d

:

DD

µ

<

=

D

6

Reverse Drain Current vs.

Source to Drain Voltage

10

Pulse Test

8

DR

6

4

V = 10 V

2

GS

Reverse Drain Current I (A)

2SK1933

0, –5 V

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

0.01

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

1 Shot Pulse

0

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

0.2 0.4 0.6 0.8 1.0

Source to Drain Voltage V (V)

Pulse Width PW (s)

SD

TC = 25°C

θch–c (t) = γ
θch–c = 0.83°C/W, T

P

DM

(t) · θch–c

S

PW

T

= 25°C

C

D =

PW

T

7

2SK1933

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
10 V

D.U.T

Vout Monitor

R

L

V

DD

.

=

30 V

.

Vin

Vout

t

d (on)

Waveforms

10%

10%

90% 90%

t

r

td

(off)

90%

10%

t

f

8

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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