Datasheet 2SK1931 Datasheet (Shindengen)

SHINDENGEN

Item

Symbol

Conditions

Ratings

Unit

T

-55〜150

℃

V

200

V

ID5

IS5

VR Series Power MOSFET

2SK1931

( F5E20 )

200V 5A

FEATURES

● Applicable to 4V drive.

● The static Rds(on) is small.

● Built-in ZD for Gate Protection.

APPLICATION

● DC/DC converters

● Power supplies of DC 12-24V input

● Product related to

Integrated Service Digital Network

N-Channel Enhancement type

OUTLINE DIMENSIONS

Case : E-pack

(Unit : mm)

RATINGS

●AbsoluteMaximumRatings（Tc=25℃）

StorageTemperature
Channel Temperature T
Drain-SourceVoltage
Gate-SourceVoltage V
ContinuousDrainCurrent（DC）
ContinuousDrainCurrent（Peak) I
ContinuousSourceCurrent（DC）
TotalPowerDissipation P

stg

ch
DSS
GSS

DP

T

150

±30

10 A
20 W

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

VR Series Power MOSFET

●Electrical Characteristics Tc = 25℃

Item Symbol Conditions Min. Typ. Max. Unit

V

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time

(BR)DSSID

R

DS(ON)ID

V

θjc

C

I

DSS

I

GSS

g

fs

THID

V

SDIS

Qg

C

iss

C

rss

oss

t

on

t

off

= 1mA, VGS = 0V

VDS = 200V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 2.5A, VDS = 10V

= 2.5A, VGS = 10V

= 1mA, VDS = 10V

= 2.5A, VGS = 0V

junction to case
VGS = 10V, ID = 5A, VDD = 150V

VDS = 10V, VGS = 0V, f = 1MH

ID = 2.5A, VGS = 10V, RL = 40Ω

Z

2SK1931 ( F5E20 )

200 V

250 μA

±0.1

0.9 1.8 S

0.45 0.65 Ω

234V

1.5

6.25 ℃/Ｗ

11 nC

360

45 pF

190

55 110ns
75 150

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

10

2SK1931 Transfer Characteristics

Tc = −55°C

8

25°C

100°C

[A]

D

6

4

150°C

Drain Current I

2

VDS = 10V
pulse test

TYP

0

0 5 10 15 20

Gate-Source Voltage VGS [V]

2SK1931

[Ω]

DS(ON)

1

Static Drain-Source On-state Resistance

ID = 2.5A

0.1

Static Drain-Source On-state Resistance R

-50 0 50 100 150

Case Temperature Tc [°C]

VGS = 10V
pulse test

TYP

[V]

TH

2SK1931

5

4

3

2

Gate Threshold Voltage

Gate Threshold Voltage V

1

0

-50 0 50 100 150

Case Temperature Tc [°C]

VDS = 10V
ID = 1mA
TYP

10

2SK1931

Safe Operating Area

100µs

R

DS(ON)

[A]

D

limit

1

Drain Current I

0.1

Tc = 25°C

Single Pulse

200µs

1ms

10ms

100ms

DC

1 10 100

Drain-Source Voltage VDS [V]

0

10

-1

10

Transient Thermal Impedance

2SK1931

10

-2

10

-3

10

-4

1

0.1

10

Transient Thermal Impedance θjc(t) [°C/W]

Time t [s]

1000

0.005

Tc=25°C

TYP

Ciss

Coss

Crss

Drain-Source Voltage VDS [V]

2SK1931

Capacitance

100

Capacitance Ciss Coss Crss [pF]

10

0 20 40 60 80 100

2SK1931 Power Derating

100

80

60

40

Power Derating [%]

20

0

0 50 100 150

Case Temperature Tc [°C]