Datasheet 2SK1880-S Datasheet (HIT)

2SK1880(L), 2SK1880(S)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• No secondary breakdown

• Suitable for Switching regulator

Outline

1

2

3

1

2

3

4

4

DPAK-1

1. Gate

2. Drain

3. Source

4. Drain

D

G

S

2SK1880(L), 2SK1880(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

600 V

Gate to source voltage V

GSS

±30 V

Drain current I

D

1.5 A

Drain peak current I

D(pulse)

*

1

3.0 A

Body to drain diode reverse drain current I

DR

1.5 A

Channel dissipation Pch*

2

20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

2SK1880(L), 2SK1880(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown
voltage

V

(BR)DSS

600 — — V ID = 10 mA, VGS = 0

Gate to source breakdown
voltage

V

(BR)GSS

±30 — — V IG = ±100 µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±25 V, VDS = 0

Zero gate voltage drain current I

DSS

— — 100 µAV

DS

= 500 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

2.0 — 3.0 V ID = 1 mA, VDS = 10 V

Static drain to source on state
resistance

R

DS(on)

— 6.5 8.0 Ω ID = 1 A

V

GS

= 10 V*

1

Forward transfer admittance |yfs| 0.85 1.4 — S ID = 1 A

V

DS

= 20 V*

1

Input capacitance Ciss — 250 — pF VDS = 10 V
Output capacitance Coss — 55 — pF VGS = 0
Reverse transfer capacitance Crss — 8 — pF f = 1 MHz
Turn-on delay time t

d(on)

— 10 — ns ID = 1 A

Rise time t

r

— 25 — ns VGS = 10 V

Turn-off delay time t

d(off)

— 35 — ns RL = 30 Ω

Fall time t

f

—30—ns

Body to drain diode forward
voltage

V

DF

— 0.95 — V IF = 1.5 A, VGS = 0

Body to drain diode reverse
recovery time

t

rr

— 350 — µsI

F

= 1.5 A, VGS = 0,

di

F

/ dt = 100 A / µs

Note 1. Pulse Test

2SK1880(L), 2SK1880(S)

4

30

20

10

50 100 150

Case Temperature Tc (°C)

Power vs. Temperature Derating

Channel Dissipation Pch (W)

0

Drain Current I (A)

Drain to Source Voltage V (V)

DS

D

1 ms

PW = 10 ms (1 shot)

100 s

µ

10 s

µ

Operation in this

area is limited

by R (on)

DS

Maximum Safe Operation Area

0.1 0.3 1 3 10 300 1000

Ta = 25°C

DC Operation (Tc = 25°C)

10

3
1

0.3

0.1

0.03

0.01

Typical Output Characteristics

2.0

1.6

1.2

0.8

0.4

Drain Current I (A)

D

GS

V = 3.5 V

Drain to Source Voltage V (V)

DS

10 V

5 V

4.5 V

4 V

10 20 30 40 50

Pulse Test

0

Typical Transfer Characteristics

DS

V = 20 V

Pulse Test

Drain Current I ( A )

D

2.0

1.6

1.2

0.8

0.4

2

Gate to Source Voltage V (V)

GS

Tc = 25°C

–25°C

75°C

468100

2SK1880(L), 2SK1880(S)

5

Pulse Test

0

4

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Drain to Source Saturation Voltage

V (on) (V)

DS

20

16

12

8

4

I = 1.5 A

D

1 A

0.5 A

812 2016

Static Drain to Source on State

Resistance vs. Drain Current

Static Drain to Source on State

Resistance R (on) ( )

DS

Drain Current I (A)

D

V = 10 V

GS

Ω

0.1 0.2 0.5 1 2 5

100

0.05

50

20
10

5

2
1

Pulse Test

Static Drain to Source on State

Resistance vs. Temperature

Static Drain to Source on State

Resistance R (on) ( )

DS

Ω

20

16

12

8

4

I = 1 A

D

–40

Case Temperature Tc (°C)

0.5 A

0 40 80 120 160

Forward Transfer Admittance

vs. Drain Current

Forward Transfer Admittance

| yfs | (S)

Drain Current I (A)

D

Tc = –25°C

75°C

5

2
1

0.5

0.2

0.1

0.05

25°C

Pulse Test
V = 20 V

DS

0.02 0.05 0.1 0.2 0.5 1 2

2SK1880(L), 2SK1880(S)

6

Body to Drain Diode Reverse

Recovery Time

Reverse Recovery Time t (ns)

Reverse Drain Current I (A)

DR

di/dt = 100 A/ s
V = 0
Ta = 25°C
Pulse Test

5000

0.1 0.2 0.5 1 2 5 10

GS

µ

rr

2000
1000

500

200
100

50

Typical Capacitance vs.

Drain to Source Voltage

Capacitance C (pF)

1000

100

10

1

Ciss

Coss

Crss

V = 0
f = 1 MHz

GS

0 1020304050

Drain to Source Voltage V (V)

DS

Dynamic Input Characteristics

1000

800

600

400

200

Drain to Source Voltage V (V)

Gate Charge Qg (nc)

Gate to Source Voltage V (V)

DS

GS

20

16

12

8

4

0

I = 1.5 A

D

V = 100 V

250 V

400 V

DD

0 4 8 121620

V = 100 V

250 V

400 V

DD

V

GS

V

DS

Switching Characteristics

Switching Time t (ns)

Drain Current I (A)

D

t (on)

t

t

t (off)

500

200
100

50

20
10

5

0.1 0.2 0.5 1 2 5 10

V = 10 V
PW = 2 s
duty 1%
V 30 V

GS

DD

µ

=

:

<

=

d

r

f

d

2SK1880(L), 2SK1880(S)

7

Reverse Drain Current vs.

Source to Drain Voltage

2.0

1.6

1.2

0.8

0.4

Reverse Drain Current I (A)

DR

SD

0.4 0.8 1.2 1.6

2.0

Source to Drain Voltage V (A)

GS

Pulse Test

V = 10 V

0 V, –5 V

0

10 100

1 m

10 m

100 m

10

0.01

0.03

0.1

0.3

1.0

3

Pulse Width PW (S)

Normalized Transient Thermal Impedance s (t)

γ

µ

µ

D = 1

0.5

0.2

0.1

0.05

0.02

1 shot Pulse

Tc = 25°C

0.01

1

θch – c(t) = s(t) ch – c

ch – c = 6.25°C / W. Tc = 25°C

P

D =

PW
T

PW

T

DM

γ

.

θ

θ

Normalized Transient Thermal Impedance vs. Pulse Width

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

DPAK (L)-(1)
—
Conforms

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

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