Datasheet 2SK1837, 2SK1836 Datasheet (HIT)

2SK1836, 2SK1837

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switchingregulator, DC-DC converter

Outline

TO-3PL

G

D

1

2

3

1. Gate

2. Drain (Flange)

S

3. Source

2SK1836, 2SK1837

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage K1836 V

DSS

K1837 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

450 V

±30 V
50 A
200 A
50 A
250 W

2

2SK1836, 2SK1837

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source K1836 V
breakdown

K1837 500 — —

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate K1836 I
voltage drain

K1837 VDS = 400 V, VGS = 0

GSS

DSS

current
Gate to source cutoff voltage V
Static drain to K1836 R
source on state

K1837 — 0.085 0.11 VGS= 10 V*

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs|2235—SI

Input capacitance Ciss — 8150 — pF VDS = 10 V
Output capacitance Coss — 2100 — pF VGS = 0
Reverse transfer capacitance Crss — 180 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

450 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.08 0.10 Ω ID = 25 A

1

= 25 A

D

V

DS

= 10 V*

1

— 80 — ns ID = 25 A
— 250 — ns VGS = 10 V
— 550 — ns RL = 1.2 Ω
— 220 — ns
— 1.1 — V IF = 50 A, VGS = 0

— 620 — ns IF = 50 A, VGS = 0,

di

/ dt = 100 A / µs

F

3

2SK1836, 2SK1837

Power vs. Temperature

400

300

200

100

Channel Dissipation Pch (W)

0

50 100 150 200
Case Temperature Tc (°C)

Typical Output Characteristics

D

100

80

Pulse Test

60

8 V

10 V

6 V

5.5 V

Maximum Safe Operation Area

1000

Operation in this area
is limited by R (on)

300

100

30

D

10

3

Drain Current I (A)

1

Ta = 25°C

0.3

0.1
13

Drain to Source Voltage V (V)

Typical Transfer Characteristics

100

V = 20 V

DS

Pulse Test

80

D

60

DS

10 s

100 ms

1 ms

PW = 10 ms (1 shot)

DC Operation (Tc = 25°C)

K1836
K1837

10 30 100

DS

µ

300

1000

40

Drain Current I (A)

20

0

4812

Drain to Source Voltage V (V)

5 V

4.5 V

V = 4 V

GS

16

DS

40

Drain Current I (A)

20

Tc = 75°C

25°C

– 25°C

20

0

2

Gate to Source Voltage V (V)

4

6

810

GS

4

2SK1836, 2SK1837

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

5

4

3

2

DS

1

Drain to Source Saturation Voltage

V (on) (V)

0

4

Gate to Source Voltage V (V)

8

Static Drain to Source on State

Resistance vs. Temperature

0.5
Pulse Test

0.4

0.3

DS

0.2

Static Drain–Source on State

Resistance R (on) ( )Ω

0.1

0

–40 0 40

Case Temperature Tc (°C)

I = 50 A

D

Static Drain to Source on State

Resistance vs. Drain Current

1

0.5

0.2

0.1

DS

0.05

Resistance R (on) ( )Ω

0.02

0.01
510

Pulse Test

V = 10, 15 V

GS

20

50 100 200 500

Drain Current I (A)

D

50 A

Pulse Test

20 A

I = 10 A

D

12

16

GS

20

Static Drain–Source on State

Forward Transfer Admittance

vs. Drain Current

50

20

10

5

20 A

10 A

80

120

160

fs

2

Forward Transfer Admittance

|y | (S)

1

V = 20 V

DS

Pulse Test

0.5

0.5

12 5

Tc = – 25°C

10

Drain Current I (A)

D

25°C
75°C

20

50

5

2SK1836, 2SK1837

Body to Drain Diode Reverse

Recovry Time

1000

500

200

100

di / dt = 100 A / s

50

V = 0, Ta = 25°C

GS

Reverse Recovery Time trr (ns)

20

10

0.5 1 2
Reverse Drain Current I (A)

Dynamic Input Characteristics

500

V = 100 V

400

DS

300

V

200

100

Drain to Source Voltage V (V)

0

DD

DS

V = 400 V

DD

250 V
100 V

160 240

80

Gate Charge g (nc)

µ

5

250 V
400 V

Typical Capacitance

vs. Drain to Source Voltage

10000

Ciss

1000

Ciss

Capacitance C (pF)

100

Crss

30 40

DS

50

10

DR

20 50

V = 0

GS

f = 1 MHz

10

010

Drain to Source Voltage V (V)

20

Switching Characteristics

20

16

V

GS

12

8

I = 50 A

D

320 400

4

0

Q

5000

V = 10 V,V 30 V

GS

µ

PW = 2 s, duty 1 %

2000

GS

1000

500

200

Switching Time t (ns)

Gate to Source Voltage V (V)

100

50

0.5

tr

1

251020 50

Drain Current I (A)

.
=

.

DD

td (off)

tf

td (on)

D

6

Reverse Drain Current

vs. Source Drain Voltage

100

Pulse Test

80

DR

60

40

Reverse Drain Current I (A)

20

V = 10 V

GS

2SK1836, 2SK1837

0, – 5 V

0 0.4 0.8

Normalized Transient Thermal Impedance vs. Pulse Width

3

γ

0.3

0.1

0.03

0.01

Normalized Transient Thermal Impedance s (t)

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

1 shot Pulse

µ

10 100

µ

1.2 1.6 2.0

Source to Drain Voltage V (V)

1 m

Pulse Width PW (S)

10 m

SD

Tc = 25°C

.

γ

θ

PW

D =

T

PW

T

1

10

100 m

θch – c(t) = s(t) ch – c

ch – c = 0.5°C / W, Tc = 25°C

θ

P

DM

7

2SK1836, 2SK1837

Switching Time Test Circuit

Vin Monitor

D.U.T

Vin
10 V

Ω

50

Vout Monitor

R

L

.
=

.

V 30 V

DD

Waveforms

Vin

10 %

Vout

td (on) td (off)

10 %

90 %

tr

90 %

90 %

10 %

tf

8

Unit: mm

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

5.45 ± 0.5

20.0 ± 0.3
φ3.3 ± 0.2

1.4

3.0

2.2

+0.25

1.2

–0.1

5.45 ± 0.5

1.0

3.8

7.4

0.6

+0.25
–0.1

5.0 ± 0.2

2.8 ± 0.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-3PL
—
—

9.9 g

2SK1836, 2SK1837

When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.

3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.

4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.

5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.

6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.

Hitachi, Ltd.

Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo [phone]
Fax: [phone]

For further information write to:

Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Tel: [phone]
Fax: [phone]

Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: [phone]
Fax: [phone]

Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: [phone]
Fax: [phone]

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: [phone]
Fax: [phone]

Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: [phone]
Fax: [phone]

9

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX