Datasheet 2SK1835 Datasheet (HIT)

Application

High speed power switching

Features

2SK1835

Silicon N-Channel MOS FET

• High breakdown voltage (V

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switchingregulator

= 1500V)

DSS

Outline and Equivalent Circuit

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1835

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body to drain diode reverse drain current I Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

1500 V ±20 V 4A 10 A 4A 125 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage Gate to source leak current I Zero gate voltage drain current I Gate to source cutoff voltage V Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance Forward transfer admittance |yfs| 0.9 1.4 — S ID = 2 A

Input capacitance Ciss — 1700 — pF VDS = 10 V Output capacitance Coss — 230 — pF VGS = 0 Reverse transfer capacitance Crss — 100 — pF f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage Body to drain diode reverse

t

rr

recovery time Note 1. Pulse Test

1500 — — V ID = 10 mA, VGS = 0

——±1µAVGS = ±20 V, VDS = 0 — — 500 µAVDS = 1200 V, VGS = 0

2.0 — 4.0 V ID = 1 mA, VDS = 10 V — 4.6 7.0 Ω ID = 2 A

V

= 15 V*

GS

V

= 20V*

DS

1

— 25 — ns ID = 2A — 80 — ns VGS = 10 V — 230 — ns RL = 15 Ω —80—ns — 0.85 — V IF = 4 A, VGS = 0

— 2500 — ns IF = 4 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK1835

3

2SK1835

Power vs. Temperature Derating

200

150

Maximum Safe Operation Area

50 30

1 ms

100 sµ

10 s

µ

10

D

3

PW = 10 ms (1 shot)

DC Operation (Tc = 25°C)

100

50

Channel Dissipation Pch (W)

0

50 100 150 200 Case Temperature Tc (°C)

Typical Output Characteristics

5

Pulse Test

4

3

D

2

Drain Current I (A)

1

10 V

8 V

6 V

5 V

V = 4 V

GS

1

Drain Current I (A)

0.3

Operation in this area is ilmited by R (on)

DS

0.1 Ta = 25°C

0.05 10

30 100 300 1000

Drain to Source Voltage V (V)

Typical Transfer Characteristics

5

V = 20 V

DS

4

Pulse Test

D

3

2

Drain Current I (A)

1

3000

DS

Tc = –25°C

25°C

75°C

10000

0

10

20

Drain to Source Voltage V (V)

30 40 50

DS

02

Gate to Source Voltage V (V)

4

6810

GS

4

2SK1835

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

25

20

15

DS

10

V (on) (V)

5

Drain to Source Saturation Voltage

0

4

Gate to Source Voltage V (V)

8

Static Drain to Source on State

Resistance vs. Temperature

25

Pulse Test

3 A

2 A

I = 1 A

D

12 16 20

GS

Static Drain to Source on State

Resistance vs. Drain Current

50

Pulse Test

20

Ω

10

DS

5

2

Static Drain–Source on State

Resistance R (on) ( )

1

0.5

0.2 0.5 1 2 5 10 Drain Current I (A)

Forward Transfer Admittance

vs. Drain Current

10

V = 10 V

GS

D

15 V

20

Pulse Test

20

V = 15 V

GS

Ω

15

DS

10

Static Drain–Source on State

Resistance R (on) ( )

5

0

0–40 40 80 120 160

Case Temperature T (°C)

I = 3 A

D

C

1 A

2 A

5

Pulse Test V = 20 V

DS

2

1

fs

0.5

Forward Transfer Admittance

|y | (S)

0.2

0.1

0.05 0.1 0.2 0.5 1 2 5 Drain Current I (A)

Tc = –25°C

25°C

D

75°C

5

2SK1835

Body to Drain Diode Reverse

Recovery Time

5000

2000

1000

500

di / dt = 100 A / s V = 0, Ta = 25°C

GS

µ

200

Reverse Recovery Time trr (ns)

100

5

0.1

0.2

0.5

Reverse Drain Current I (A)

2510

1

DR

Dynamic Input Characteristics

1000

I = 4 A

V

DS

D

250 V

V = 600 V

DD

400 V

250 V

Gate Charge g (nc)

400 V

Q

V

GS

V = 600 V

DD

800

DS

600

400

200

Drain to Source Voltage V (V)

0 40 80 120 160 200

10000

1000

100

Capacitance C (pF)

10

0

20

16

12

1000

500

GS

200

100

8

50

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

20

10

0.05 0.1 0.2 0.5 1 2 5

Typical Capacitance vs. Drain

to Source Voltage

Ciss

Coss

Crss

V = 0

GS

f = 1 MHz

10 20 30

Drain to Source Voltage V

Switching Characteristics

td (off)

tf

tr

td (on)

V = 10 V, duty 1 %

GS

PW = 5 sµ

Drain Current I (A)

D

40 50

DS

6

Reverse Drain Current

vs. Source to Drain Voltage

5

2SK1835

4

DR

3

2

1

V = 15 V

Reverse Drain Current I (A)

GS

0

0.4 0.8

0

Normalized Transien Thermal Impedance vs. Pulse Width

3

γ

1.0

0.3

0.1

0.03

0.01

Normalized Transient Thermal Impedance s (t)

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

10 100

µ

1 shot Pulse

µ

1 m

Pulse Test

0,–5 V

1.2

Source to Drain Voltage V (V)

10 m

1.6

SD

2.0

θch – c(t) = s(t) ch – c

ch – c = 1.0°C / W, Tc = 25°C

θ

P

100 m

γ

DM

T

Tc = 25°C

.

θ

PW

1

D =

PW T

10

Pulse Width PW (S)

7

2SK1835

Switching Time Test Circuit

Vin Monitor

D.U.T

Vin 10 V

Ω

50

Vout Monitor

R

L

. =

.

V 30 V

DD

Waveforms

Vin

10 %

Vout

td (on) td (off)

10 %

90 %

tr

90 %

10 %

tf

8

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code JEDEC EIAJ Weight

(reference value)

TO-3P — Conforms

5.0 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.

Hitachi, Ltd.

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