Page 1
2SK1773
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator, DC-DC converter
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
Page 2
2SK1773
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
1000 V
±30 V
5A
15 A
5A
100 W
2
Page 3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
R
GSS
DSS
GS(off)
DS(on)
resistance
Forward transfer admittance |yfs| 3.2 5.0 — S ID = 3 A
Input capacitance Ciss — 1700 — pF VDS = 10 V
Output capacitance Coss — 700 — pF VGS = 0
Reverse transfer capacitance Crss — 315 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note 1. Pulse Test
1000 — — V ID = 10 mA, VGS = 0
±30 — — V IG = ±100 µA, VDS = 0
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 800 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 1.5 2.0 Ω ID = 3 A
V
= 10 V*
GS
V
= 20 V*
DS
1
1
— 25 — ns ID = 3 A
— 110 — ns VGS = 10 V
— 210 — ns RL = 10 Ω
— 135 — ns
— 0.85 — V IF = 5 A, VGS = 0
— 1050 — ns IF = 5 A, VGS = 0,
di
/ dt = 100 A / µs
F
2SK1773
3
Page 4
2SK1773
Power vs. Temperature Derating
160
120
Maximum Safe Operation Area
50
30
Operationm in this area
is limited by R (on)
10
D
3
DS
10 sµ
100 sµ
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
1 ms
80
40
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10
8
D
6
4
Drain Current I (A)
2
10 V
8 V
V = 3.5 V
GS
5.5 V
Pulse Test
5 V
4 V
1
Drain Current I (A)
0.3
Ta = 25°C
0.1
0.05
10
30 100 300 1000 3000
Drain to Source Voltage V (V)
Typical Transfer Characteristics
5
V = 10 V
DS
4
Pulse Test
D
3
2
Drain Current I (A)
Tc = 75°C
1
10000
DS
25°C
–25°C
0
10
Drain to Source Voltage V (V)
20 30 40 50
DS
02
Gate to Source Voltage V (V)
46810
GS
4
Page 5
2SK1773
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
16
12
8
DS
4
Drain to Source Saturation Voltage
V (on) (V)
0
4
Gate to Source Voltage V (V)
812
Static Drain to Source on State
Resistance vs. Temperature
10
5 A
2 A
I = 1 A
D
Pulse Test
16
GS
Static Drain to Source on State
Resistance vs. Drain Current
50
20
Ω
10
DS
Static Drain–Source on State
Resistance R (on) ( )
20
0.5
Pulse Test
5
V = 10 V
2
1
0.2 0.5 1 2 5 10 20
Drain Current I (A)
GS
D
Forward Transfer Admittance
vs. Drain Current
10
Pulse Test
8
V = 10 V
GS
Ω
6
DS
4
Static Drain–Source on State
Resistance R (on) ( )
2
0
–40 0
40 80 120
Case Temperature T (°C)
I = 5 A
D
2 A
C
1 A
160
5
2
1
fs
0.5
Forward Transfer Admittance
|y | (S)
0.2
0.1
0.05
Tc = – 25°C
V = 10 V
DS
Pulse Test
0.1 0.2 0.5 1 2 5
Drain Current I (A)
25°C
75°C
D
5
Page 6
2SK1773
Body to Drain Diode Reverse
Recovry Time
5000
2000
1000
500
200
V = 0, Ta =25°C
GS
µdi / dt = 100 A / s
Reverse Recovery Time trr (ns)
100
50
0.1
0.2 0.5 1 2 5
Reverse Drain Current I (A)
Dynamic Input Characteristics
1000
800
DS
V
DS
600
400
V = 600 V
200
Drain to Source Voltage V (V)
04080
DD
400 V
250 V
Gate Charge Qg (nc)
V
GS
V = 250 V
DD
400 V
600 V
120
DR
I = 5 A
D
160 200
10000
1000
Capacitance C (pf)
100
10
20
16
12
10
500
200
GS
100
50
8
Switing Time t (ns)
20
4
Gate to Source Voltage V (V)
10
0
Typical Capacitance vs. Drain
to Source Voltage
V = 0
GS
f = 1 MHz
010
20
30 40 50
Drain to Source Voltage V (V)
Switching Characteristics
td (off)
tf
tr
td (on)
.
V = 10 V, V 30 V
GS
PW = 2 s, duty < 1%
5
0.1
0.2 0.5 1 2 5 10
=
.
DD
µ
Drain Current I (A)
D
Ciss
Coss
Crss
DS
6
Page 7
Recerse Drain Current vs. Source
to Drain Voltage
10
2SK1773
8
DR
6
4
V = 10 V
Reverse Drain Current I (A)
GS
2
0 0.4 0.8 1.2
Normalized Transient Thermal Impedance vs. Pulse Width
3
γ
1.0
0.3
0.1
0.03
0.01
Normalized Transient Thermal Impedance s (t)
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
µ
10 100
1 shot Pulse
µ
1 m
Pulse Test
0, – 5 V
1.6
Source to Drain Voltage V (V)
10 m
SD
2.0
θch – c(t) = s(t) ch – c
ch – c = 1.25°C / W, Tc = 25°C
θ
P
100 m
γ
DM
T
Tc = 25°C
.
θ
PW
1
D =
PW
T
10
Pulse Width PW (S)
7
Page 8
2SK1773
Switching Time Test Circuit
Vin Monitor
Vin
10 V
Waveforms
Vout Monitor
D.U.T
R
L
Ω
50
.
=
.
V 30 V
DD
Vin
10 %
Vout
td (on) td (off)
10 %
90 %
tr
90 %
10 %
90 %
tf
8
Page 9
1.6
0.5
15.6 ± 0.3
φ3.2 ± 0.2
1.0
2.0
Unit: mm
4.8 ± 0.2
1.5
5.0 ± 0.3
19.9 ± 0.2
14.9 ± 0.2
0.3
1.4 Max
3.6
2.0
0.9
1.0
1.0 ± 0.2
5.45 ± 0.55.45 ± 0.5
18.0 ± 0.5
2.8
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-3P
—
Conforms
5.0 g
Page 10
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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