Datasheet 2SK1772 Datasheet (HIT)

2SK1772

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device - - - can be driven from 5 V source.

• Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Outline

UPAK

G

1

2

3

4

D

1. Gate

2. Drain

3. Source

4. Drain

S

2SK1772

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)

3. Marking is "HY".

30 V
±20 V
1A
2A
1A
1W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Forward transfer admittance |yfs| 0.6 1.0 — S ID = 0.5 A

Input capacitance Ciss — 85 — pF VDS = 10 V
Output capacitance Coss — 65 — pF VGS = 0
Reverse transfer capacitance Crss — 20 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

30 — — V ID = 10 mA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±16 V, VDS = 0
——50µAVDS = 25 V, VGS = 0

1.0 — 2.0 V ID = 1 mA, VDS = 10 V
— 0.4 0.6 Ω ID = 0.5 A

V

= 10 V*

GS

— 0.6 0.85 Ω ID = 0.5 A

V

= 4 V*

GS

V

= 10 V*

DS

1

1

1

— 10 — ns ID = 0.5 A
— 15 — ns VGS = 10 V
— 40 — ns RL = 60 Ω
—30—ns
— 1.2 — V IF = 1 A, VGS = 0

— 30 — ns IF = 1 A, VGS = 0,

di

/dt = 50 A/µs

F

2SK1772

3

2SK1772

Power vs. Temparature Derating

2.0

1.5

1.0

0.5

Channel Dissipation Pch (W)

0 50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

2.0
10 V

4 V

3.5 V

5 V

1.6

Pulse test

D

1.2

3.0 V

0.8

Drain Current I (A)

0.4

2.5 V

10

Operation in this area is

3

D

1

limited by R

DS(on)

PW = 100 µs

PW = 1 ms

PW = 10 ms

DC Operation

0.3

0.1

Drain Current I (A)

0.03

Maximum Safe Operation Area

Ta = 25°C

0.01

0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)

DS

Typical Transfer Characteristics

1.0
V = 10 V

DS

Pulse test

0.8

D

0.6

75°C

0.4

Drain Current I (A)

0.2

Tc = 25°C

–25°C

V = 2 V

GS

012345

Drain to Source Voltage V (V)

DS

012345

Gate to Source Voltage V (V)

GS

4

2SK1772

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2.0
Pulse test

1.6

DS(on)

V (V)

1.2

0.8

0.4

Drain to Source Saturation Voltage

2 A

1 A

I = 0.5 A

D

0246810

Gate to Source Voltage V (V)

GS

Static Drain to Source on State

Resistance vs. Temperature

2.0
Pulse test

Ω

1.6

DS(on)

R ( )

1.2

0.8

V = 4 V

GS

2 A

0.5 A

0.4

V = 10 V

GS

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

I = 0.5 A, 1 A

D

Case Temperature Tc (°C)

1 A

2 A

Static Drain to Source on State

Resistance vs. Drain Current

10

Ω

Pulse test

5

DS(on)

2

R ( )

1

V = 4 V

GS

0.5
10 V

0.2

0.1

Static Drain to Source on State Resistance

0.05 0.1 0.2 0.5 1 2 5
Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

5.0

fs

2.0

–25°C

Tc = 25°C

1.0

0.5

75°C

0.2

0.1

V = 10 V

DS

Pulse test

Forward Transfer Admittance |y | (S)

0.05

0.02 0.05 0.1 0.2 0.5 1.0 2.0
Drain Current I (A)

D

5

2SK1772

Body-Drain Diode Reverse

Recovery Time

500

di/dt = 50 A/µs
V = 0

GS

Ta = 25°C

200

rr

100

50

20

10

Reverse Recovery Time t (ns)

5

0.02 0.05 0.1 0.2 0.5 1.0 2.0
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

50

I = 1 A

D

V

40

DS

V = 5 V

DD

GS

10 V

30

V

DS

20

10

Drain to Source Voltage V (V)

20 V

V = 5 V

DD

10V
20 V

0 0.8 1.6 2.4 3.2 4.0

Gate Charge Qg (nc)

Typical Capacitance vs. Drain to

1000

100

10

Capacitance C (pF)

1

0 1020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

500

200

GS

100

12

50

8

20

4

0

Switching Time t (ns)

10

Gate to Source Voltage V (V)

5

0.02 0.05 0.1 0.2 0.5 1.0 2.0
Drain Current I (A)

Source Voltage

Ciss

Coss

Crss

tf

td(off)

tr

D

V = 0

GS

f = 1 MHz

DS

V = 10 V

GS

V = 30 V

DD

PW = 2 µs
duty 1 %

≤

td(on)

6

2SK1772

Reverse Drain Current vs. Source to

2.0
Pulse test

1.6

DR

1.2

0.8

0.4

Reverse Drain Current I (A)

0 0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Drain Voltage

V = 10 V

GS

0, –5 V

SD

7

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

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