Datasheet 2SK1761 Datasheet (HIT)

2SK1761

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switchingregulator, DC-DC converter

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SK1761

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

250 V
±30 V
12 A
48 A
12 A
75 W

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 5.0 8.0 — S ID = 6 A

Input capacitance Ciss — 1100 — pF VDS = 10 V
Output capacitance Coss — 440 — pF VGS = 0
Reverse transfer capacitance Crss — 68 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse Test

250 — — V ID = 10 mA, VGS = 0

±30 — — V IG = ±100 µA, VDS = 0

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 200 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.23 0.35 Ω ID = 6 A

V

= 10 V*

GS

V

= 10 V*

DS

1

1

— 20 — ns ID = 6 A
— 65 — ns VGS = 10 V
— 100 — ns RL = 5 Ω
—44— ns
— 1.0 — V IF = 12 A, VGS = 0

— 200 — ns IF = 12 A, VGS = 0,

di

/ dt = 100 A / µs

F

2SK1761

3

2SK1761

Power vs. Temperature Derating

160

120

Maximum Safe Operation Area

100

30

10

D

PW = 10 ms (1 shot)

DC Operation (Tc = 25°C)

1 ms

100 µs

10 s

µ

80

40

Channel Dissipation Pch (W)

0

50 100 150 200
Case Temperature Tc (°C)

Typical Output Characteristics

20

10 V

16

D

12

8

Drain Current I (A)

4

6 V

5.5 V

5 V

4.5 V

V = 4 V

GS

Pulse Test

3

Drain Current I (A)

1

0.3

0.1

Ta = 25°C

Operation in this area
is limited by R (on)

13

Drain to Source Voltage V (V)

Typical Transfer Characteristics

10

V = 10 V

DS

8

Pulse Test

D

6

4

Drain Current I (A)

2

DS

10 30 100

Tc = 75°C
25°C
– 25°C

1000

300

DS

0

48

Drain to Source Voltage V (V)

12

16

DS

20

0

2

Gate to Source Voltage V (V)

468

GS

10

4

2SK1761

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

5

4

3

2

DS

1

Drain to Source Saturation Voltage

V (on) (V)

0

4812

Gate to Source Voltage V (V)

Static Drain to Source on State

Resistance vs. Temperature

1.0

Pulse Test

0.8

V = 10 V

GS

Ω

0.6

DS

0.4

Static Drain–Source on State

Resistance R (on) ( )

0.2

I = 10 A

D

Pulse Test

10 A

5 A

I = 2 A

D

16

GS

2 A

5 A

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

1

0.5

DS

0.2

Static Drain–Source on State

Resistance R (on) ( )Ω

0.1

20

0.05

0.5

2

1

Drain Current I (A)

5

V = 10 V

GS

10 20

D

15 V

50

Forward Transfer Admittance

vs. Drain Current

50

V = 10 V

DS

Pulse Test

20

10

5

fs

2

Forward Transfer Admittance

|y | (S)

1

Tc = –25°C

75°C

25°C

0

– 40

40 80 120 160

0

Case Temperature Tc (°C)

0.5

0.1 0.2 0.5

12

Drain Current I (A)

D

5

10

5

2SK1761

Body to Drain Diode Reverse

Recovery Time

500

di / dt = 100 A / s
V = 0, Ta = 25°C

GS

200

100

50

20

Reverse Recovery Time trr (ns)

10

5

0.2

0.5
Reverse Drain Current I (A)

µ

12 51020

Dynamic Input Characteristics

500

I = 12 A

D

400

DS

300

V

DS

200

Drain to Source Voltage V (V)

100

0

0816

V = 200 V

DD

100 V

50 V

Gate Charge Qg (nc)

DR

V = 200 V

DD

100 V

50 V

24 32

Typical Capacitance vs. Drain

to Source Voltage

10000

V = 0

GS

f = 1 MHz

1000

Ciss

Coss

Capacitance C (pF)

100

Crss

10

0

10

Drain to Source Voltage V (V)

20

30 40

DS

50

Switching Characteristics

20

16

V

GS

12

8

4

0

40

500

V = 10 V,V 30 V

GS

PW = 2 s, duty 1 %

200

GS

DD

µ

100

50

tr

20

Switching Time t (ns)

Gate to Source Voltage V (V)

10

5

0.2

0.1

0.5 1

Drain Current I (A)

.
=

.

td (off)

tf

td (on)

2

D

10

5

6

2SK1761

Reverse Drain Current vs. Source

to Drain Voltage

20

Pulse Test

16

DR

12

8

Reverse Drain Current I (A)

4

V = 10 V

GS

0, – 5 V

0

0.4

Source to Drain Voltage V (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

γ

D = 1

1.0

0.5

0.8

1.2 1.6

SD

2.0

Tc = 25°C

0.3

0.2

0.1

0.1

0.05

0.02

0.03

0.01

Normalized Transient Thermal Impedance s (t)

µ

10 100

0.01

1 shot Pulse

µ

1 m

10 m

Pulse Width PW (S)

DM

γ

PW

T

110

θch – c(t) = s(t) ch – c

ch – c = 1.67°C / W, Tc = 25°C

θ

P

100 m

.

θ

PW

D =

T

7

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.1

-0.08

+0.2

6.4

–0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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