Datasheet 2SK168 Datasheet (HIT)

Silicon N-Channel Junction FET

Application

VHF Amplifier, Mixer, Local oscillator

Outline

TO-92 (2)

2SK168

1. Gate

2. Source

3. Drain

3

2

1

2SK168

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Gate to drain voltage V
Gate to source voltage V
Gate current I
Drain current I

GDO

GSS

G

D

Channel power dissipation Pch 200 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to drain breakdown

V

(BR)GDO

voltage
Gate cutoff current I
Drain current I
Gate to source cutoff voltage V

GSS

DSS

GS(off)

Forward transfer admittance |yfs|810—mSV
Input capacitance Ciss — 6.8 — pF V
Reverse transfer capacitance Crss — 0.1 — pF V
Power gain PG — 27 — dB V

Noise figure NF — 1.7 — dB V

Note: 1. The 2SK168 is grouped by I

DEF

4 to 8 6 to 12 10 to 20

–30 — — V IG = –100 µA, IS = 0

— — –10 nA VGS = –0.5 V, VDS = 0

1

*

4 — 20 mA VDS = 5 V, VGS = 0
— — –3.0 V V

as follows.

DSS

–30 V
–1 V
10 mA
20 mA

= 5 V, ID = 10 µA

DS

= 5 V, VGS = 0, f = 1 kHz

DS

= 5 V, VGS = 0, f = 1 MHz

DS

= 5 V, VGS = 0, f = 1 MHz

DS

= 5 V, VGS = 0,

DS

f = 100 MHz

= 5 V, VGS = 0,

DS

f = 100 MHz

2

2SK168

Maximum Channel Power

Dissipation Curve

300

200

100

Channel Power Dissipation Pch (mW)

0

50

100 150

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

10

VGS = 0

8

(mA)

D

6

–0.2 V

Typical Output Characteristics (1)

10

VGS = 0

8

(mA)

D

6

4

Drain Current I

2

0

10 20

Drain to Source Voltage V

Typical Transfer Characteristics

15

VDS = 5 V

10

(mA)

D

–0.2 V

–0.4

–0.6
–0.8

–1.0

Pch = 200 mW

30 40 50

(V)

DS

4

Drain Current I

2

0

12

Drain to Source Voltage V

–0.4
–0.6
–0.8

–1.0

345

(V)

DS

5

Drain Current I

0

–3.0 –2.0

Gate to Source Voltage V

F

E

D

–1.0 0

(V)

GS

3

2SK168

 (mS)

fs

Forward Transfer Admittance y

20

(pF)

iss

10

Forward Transfer Admittance vs.

Drain to Source Voltage

15

10

5

0

5

Drain to Source Voltage V

Input Capacitance vs.

Drain to Source Voltage

Ta = –25°C
25°C

75°C

VGS = 0
f = 1 kHz

10 15

DS

V

= 0

GS

f = 1 MHz

(V)

 (mS)

fs

Forward Transfer Admittance y

(pF)

rss

1.0

Forward Transfer Admittance vs.

Drain Current

50

20
10

5

2

1.0

0.5

0.5 1.0 20.2
Drain Current I

Reverse Transfer Capacitance vs.

Drain to Source Voltage

5

2

V

= 5 V

DS

f = 1 kHz

10520

(mA)

D

V

= 0

GS

f = 1 MHz

5

Input Capacitance C

2

0.2 0.5 1.00.1

Drain to Source Voltage V

5210

(V)

DS

0.5

0.2

0.1

Reverse Transfer Capacitance C

0.05

0.2 0.5 1.00.1

Drain to Source Voltage V

5210

(V)

DS

4

2SK168

Output Capacitance vs.

Drain to Source Voltage

200

100

(pF)

oss

50

20

10

5

Output Capacitance C

2

0.2 0.5 1.00.1

Drain to Source Voltage V

Power Gain vs. Drain Current

30

E

D

20

V

= 0

GS

f = 1 MHz

5210

(V)

DS

F

Power Gain vs.

Drain to Source Voltage

30

20

10

Power Gain PG (dB)

0

5

Drain to Source Voltage VDS (V)

Noise Figure vs.

Drain to Source Voltage

8

6

VGS = 0
f = 100 MHz

10 15

VGS = 0
f = 100 MHz

VDS = 5 V

10

0

f = 100 MHz
V

Variable

GS

468102

Power Gain PG (dB)

Drain Current I

(mA)

D

1412 16

4

2

Noise Figure NF (dB)

0

48

Drain to Source Voltage V

12 16

(V)

DS

5

2SK168

Input and Output Admittance

5

yis = gis+jb
yos = gos+jb

2

1.0

VDS = 5 V
I

= 10 mA

D

(mS)

(mS)

os

is

0.5

0.2

Input Admittance y

Output Admittance y

0.1

0.05
50

Input and Output Admittance

5

2

(mS)

(mS)

os

is

1.0

0.5

VDS = 5 V

0.2

0.1

0.05

f = 100 MHz

0.5 1.0

Input Admittance y

Output Admittance y

vs. Frequency

is

os

100 200
Frequency f (MHz)

vs. Drain Current

bis×10

yis = gis+jb
yos = gos+jb

gos is Negligible
Small at This Frequency

2 5 10 20

Drain Current I

(mA)

D

g

is

bis×10
bos×10

g

os

b

os

g

is

is

os

500

50

Transfer Admittance vs.

Frequency

50

VDS = 5 V
I

(mS)

(mS)

rs

fs

20

= 10 mA

D

g

fs

10

5

2

yfs = gfs+jb
yrs = grs+jb

–b

fs

fs

1.0

Forward Transfer Admittance y

Reverse Transfer Admittance y

0.5
50

100 200
Frequency f (MHz)

Transfer Admittance vs.

Drain Current

50

(mS)

(mS)

rs

fs

20

VDS = 5 V
f = 100 MHz

10

5

2

100 g

1.0

Forward Transfer Admittance y

Reverse Transfer Admittance y

0.5

0.5 1.0

yfs = gfs+jb
yrs = grs+jb

rs

fs
rs

2 5 10 20

Drain Current I

fs

(mA)

D

–10 b

10 g

g

fs

–b

fs

–100 b

rs

rs

500

rs

50

6

2SK168

Power Gain and Noise Figure

Test Circuit

Shield

SG Output

Impedance

50

5.4 3.0

C

1

S.G.

D.U.T.

L

4,700

C

L

1

2

2

1,000

50

V.V

Unit R : Ω

V

DD

C : pF

C1, C2 : 0 to 30 pF Variable Air
L1 : 3.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
L2 : 4.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.

7

Unit: mm

0.60 Max

0.45 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-92 (2)
Conforms
Conforms

0.25 g

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