Datasheet 2SK1666 Datasheet (HIT)

2SK1666

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• Low voltage drive device
 Can be driven from 4 V

• Suitable for motor drive, solenoid drive , DC-DC converter and etc.

Outline

TO-3PFM

G

D

1

2

3

1. Gate

2. Drain

S

3. Source

2SK1666

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

60 V
±20 V
45 A
180 A
45 A
60 W

2

2SK1666

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

60——V I

voltage
Gate to source breakdown

V

(BR)GSS

±20——V I

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

——±10 µAVGS = ±16 V, VDS = 0
— — 250 µAVDS = 50 V, VGS = 0

1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 0.016 0.02 Ω ID = 20 A, VGS = 10 V *

resistance

— 0.022 0.035 Ω ID = 20 A, VGS = 4 V *
Forward transfer admittance |yfs| 20 32 — S ID = 20 A, VDS = 10 V *
Input capacitance Ciss — 3950 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1920 — pF f = 1 MHz
Reverse transfer capacitance Crss — 360 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

— 30 — ns ID = 20 A, VGS = 10 V,

— 180 — ns RL = 1.5 Ω

— 630 — ns

— 290 — ns

— 1.3 — V IF = 45 A, VGS = 0
voltage

Body to drain diode reverse

t

rr

— 140 — ns IF = 45 A, VGS = 0,
recovery time

Note: 1. Pulse test

= 10 mA, VGS = 0

D

= ±100 µA, VDS = 0

G

di

/dt = 50 A/µs

F

1

1

1

3

2SK1666

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

Typical Output Characteristics

100

(A)

D

80

60

10 V

8 V

Pulse Test

(°C)

C

5 V

4.5 V

4 V

500

Maximum Safe Operation Area

300

100

(A)

D

30

PW = 10 ms (1 shot)

DC Operation (T

10

3

Drain Current I

Ta = 25°C

Operation in this area
is limited by

1

0.5

0.1 0.3 3 30

R

(on)

DS

1 10 100

Drain to Source Voltage V

Typical Transfer Characteristics

50

V

= 10 V

DS

40

Pulse Test

(A)

D

30

C

= 25°C)

100 µs

1 ms

DS

10 µs

(V)

40

Drain Current I

20

Drain to Source Voltage VDS (V)

3.5 V

V

= 3 V

GS

2680

410

20

Drain Current I

10

0 1 3452

Gate to Source Voltage VGS (V)

75°C

25°C

TC = –25°C

4

2SK1666

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

2.0

DS (on)

1.6

Pulse Test

1.2

0.8
30 A

0.4

20 A

ID = 10 A

02 10648

Drain to Source Saturation Voltage V

Gate to Source Voltage VGS (V)

Static Drain to Source on State

Resistance vs. Temperature

0.1

0.08

Pulse Test

Static Drain to Source on State

Resistance vs. Drain Current

0.5

Pulse Test

0.2

0.1

(Ω)

0.05

DS (on)

R

0.02

V

= 4 V

GS

V

0.01

0.005

Static Drain to Source on State Resistance

5 20 1002

10 200

Drain Current I

D

50

(A)

Forward Transfer Admittance

vs. Drain Current

100

Ta = –25°C

50

GS

= 10 V

0.06

(Ω)

DS (on)

R

0.04

V

= 4 V

GS

ID = 30 A

20 A

0.02

V

= 10 V

GS

0

Static Drain to Source on State Resistance

–40

0 80 120

40 160

10 A, 20 A

Case Temperature TC (°C)

10 A
30 A

20

10

5

Pulse Test
V

2

Forward Transfer Admittance yfs (S)

1

0.5 2 10

= 10 V

DS

12050

Drain Current I

25°C

75°C

5

(A)

D

5

2SK1666

Body-Drain Diode Reverse

Recovery Time

500

di/dt = 50 A/µs
V

= 0, Ta = 25°C

GS

200

100

50

20

10

Reverse Recovery Time trr (ns)

5

2

10 200

5 20 100

Reverse Drain Current I

Dynamic Input Characteristics

100

80

ID = 35 A

(V)

DS

60

V

DS

40

20

Drain to Source Voltage V

V

DD

25 V
10 V

= 50 V

0 40 20080 160120

Gate Charge Qg (nc)

50

V

DD

25 V
10 V

(A)

DR

= 10 V

1,000

100

10

Capacitance C (pF)

(V)

GS

1,000

500

200

20

16

12

100

8

4

Gate to Source Voltage V

0

50

Switching Time t (ns)

20
10

0.5

Typical Capacitance vs.
Drain to Source Voltage

Ciss

Coss

Crss

V

= 0

GS

f = 1 MHz

1

0

20

10 4030 50

Drain to Source Voltage V

Switching Characteristics

t

d (off)

t

f

t

r

t

d (on)

.

V

= 10 V, V

GS

PW = 2 µs, duty ≤ 1%

250

1520

Drain Current I

DD

=

.

30 V

10

D

(A)

DS

(V)

6

100

80

(A)

DR

60

40

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

V

= 10 V

GS

2SK1666

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 shot pulse

20

Reverse Drain Current I

0

Source to Drain Voltage V

4 V

0.8 2.0

0.4 1.2 1.6

SD

(V)

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

0, –5 V

TC = 25°C

θch–c (t) = γS (t) · θch–c
θch–c = 2.08°C/W, T

P

DM

PW

T

C

= 25°C

PW

D =

T

7

Unit: mm

4.0

2.6

1.4 Max

5.45 ± 0.5

15.6 ± 0.3

+ 0.4

φ3.2

– 0.2

5.0 ± 0.3

2.7

1.6

1.4 Max

1.0 ± 0.2

5.45 ± 0.5

5.0

5.5 ± 0.3

19.9 ± 0.3

3.2

21.0 ± 0.5

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3PFM
—
—

5.6 g

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