Datasheet 2SK1628, 2SK1629 Datasheet (HIT)

2SK1628, 2SK1629

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-3PL

G

D

1

2

3

1. Gate

2. Drain

S

3. Source

2SK1628, 2SK1629

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1628 V

DSS

2SK1629 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

450 V

±30 V
30 A
120 A
30 A
200 W

2

2SK1628, 2SK1629

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1628 V

(BR)DSS

breakdown voltage 2SK1629 500
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage 2SK1628 I

GSS

DSS

drain current 2SK1629 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1628 R

GS(off)

DS(on)

on state resistance 2SK1629 — 0.22 0.27
Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V *
Input capacitance Ciss — 2800 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 780 — pF f = 1 MHz
Reverse transfer capacitance Crss — 90 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse test

450 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.20 0.25 Ω ID = 15 A, VGS = 10 V *

— 32 — ns ID = 15 A, VGS = 10 V,
— 140 — ns RL = 2 Ω
— 200 — ns
— 100 — ns
— 1.1 — V IF = 30 A, VGS = 0

— 600 — ns IF = 30 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

See characteristics curves of 2SK1169, 2SK1170

3

2SK1628, 2SK1629

300

Power vs. Temperature Derating

200

100

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

Normalized Transient Thermal Impedance vs. Pulse Width

(t)

3

S

D = 1

1

0.5

(°C)

C

Maximum Safe Operation Area

500
200

100

(A)

50

D

20

Operation in this area

10

is limited by R

5

Drain Current I

2

Ta = 25°C

1

0.5
1 3 30 300

DS (on)

PW = 10 ms (1 Shot)

DC Operation (T

C

= 25°C)

2SK1628
2SK1629

10 100 1,000

Drain to Source Voltage V

1 ms

10 µs

100 µs

DS

T

(V)

= 25°C

C

Normalized Transient Thermal Impedance γ

0.3

0.1

0.03

0.01
10 µ

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

θch–c (t) = γS (t) · θch–c
θch–c = 0.625°C/W, T

T

°C/W

PW

P

DM

= 25°C

C

D =

PW

T

4

Unit: mm

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

5.45 ± 0.5

20.0 ± 0.3
φ3.3 ± 0.2

1.4

3.0

2.2

+0.25

1.2

–0.1

5.45 ± 0.5

1.0

3.8

7.4

0.6

+0.25
–0.1

5.0 ± 0.2

2.8 ± 0.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-3PL
—
—

9.9 g

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