Datasheet 2SK1579 Datasheet (HIT)

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Suitable for low voltage operation

Outline

2SK1579

UPAK

G

1

2

3

4

D

1. Gate

2. Drain

3. Source

4. Drain

S

2SK1579

Absolute Maximum Ratings (Ta = 25°C unless otherwise specified.)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel power dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 100 µs, duty cycle ≤ 10%

2. Value on the almina ceramic board (12.5 × 20 × 0.7 mm)

12 V
±7V
2A
4A
2A
1W

2

2SK1579

Electrical Characteristics (Ta = 25°C unless otherwise specified.)

Item Symbol Min Typ Max Unit Test conditions

Drain to source cutoff current I
Gate to source cutoff current I
Gate to source cutoff voltage V
Drain to source on resistance

R

DSS

GSS

GS(off)

DS(on)

(1)
Drain to source on resistance

R

DS(on)

(2)
DC forward transfer admittance |yfs| 1 2.5 — S VDS = 5 V, ID = 1 A,

Input capacitance Ciss — 110 — pF VDS = 5 V, VGS = 0,
Reverse transfer capacitance Crss — 30 — pF f = 1 MHz
Output capacitance Coss — 150 — pF
Turn-on time t
Turn-off time t

(on)

(off)

Note 1. Marking is “DY”.

——1 µAVDS = 8 V, VGS = 0
——±5µAVGS = ±6.5 V, VDS = 0

0.4 — 1.4 V VDS = 5 V, ID = 100 µA

1 — 0.36 0.7 Ω VGS = 2.2 V, ID = 0.5 A

2 — 0.25 0.35 Ω VGS = 4 V, ID = 1 A

∆V

= 0.1 V

GS

— 500 — ns ID = 0.2 A, VGS = 0,
— 1500 — ns Vin = 4 V, RL = 51 Ω

3

2SK1579

Power vs. Temperature Derating

1.5

1.0

0.5

Channel Dissipation Pch (W)

0 50 100 150

Ambient Temperature Ta (°C)

Typical Output Characteristics

5

4

(A)

D

3

4 V

3.5 V
3 V

Ta = 25°C
Pulse Test

2.5 V

Maximum Safe Operation Area

50
20

10

(A)

5

D

2
1

Operation in this area

is limited by R

0.5

Drain Current I

0.2

0.1
Ta = 25°C

0.05

0.1 0.2 1 20

DS (on)

DC Operation (T

C

= 25°C)

0.5 10 50

2 5 100

Drain to Source Voltage V

Typical Transfer Characteristics

5

4

(A)

D

3

PW = 10 ms
1 Shot

(V)

DS

Ta = –25°C

25°C
75°C

2

Drain Current I

1

0

268

Drain to Source Voltage V

2

Drain Current I

1

V

GS

2 V

= 1.5 V

410

(V)

DS

V

DS

Pulse Test

1340

2

Gate to Source Voltage V

= 5 V

(V)

GS

5

4

2SK1579

Drain to Source on State Resistance

(Ω)

0.5

DS (on)

0.4

vs. Gate to Source Voltage

ID = 0.1 A

0.2 A

0.3

0.2

Ta = 25°C

0.1

Pulse Test

25

Drain to Source on State Resistance R

1340

Gate to Source Voltage V

0.5 A

GS

(V)

Static Drain to Source on State

Resistance vs. Temperature

1.0

Pulse Test

0.8

0.6

(Ω)

DS (on)

0.4

R

ID = 1 A

0.5 A

ID = 0.5 A

V

GS

V

GS

0.2
1 A

2 A

0

Static Drain to Source on State Resistance

–25

Case Temperature T

25 100

05075

(°C)

C

1 A

= 2 V

= 4 V

Static Drain to Source on State

Resistance vs. Drain Current

5

Ta = 25°C
Pulse Test

2

2 V

V

= 3 V

GS

4 V

(Ω)

0.5

DS (on)

R

0.2

1

0.1

0.05

Static Drain to Source on State Resistance

0.5 2 100.2

120

Drain Current I

D

5

(A)

Forward Transfer Admittance

vs. Drain Current

50

V

= 5 V

DS

Pulse Test

20

10

Ta = –25°C

5

25°C
75°C

2

1

Forward Transfer Admittance yfs (S)

0.05

0.2 1 5

0.5 20
Drain Current I

210

(A)

D

5

2SK1579

Reverse Drain Current vs.

Sourse to Drain Voltage

5

Pulse Test

(A)

4

DR

3

2

VGS = 2 V

1

Reverse Dratin Current I

0

0

Source to Drain Voltage V

1.0

VGS = 0

5,000

2,000

1,000

2.0

(V)

SD

Switching Characteristics

VGS = 4 V, VDD = 10 V
PW = 2 µs, Duty cycle = 1%

t

d (off)

Typical Capacitance vs.

Drain to Source Voltage

500

200

100

50

20

Capacitance C (pF)

V

= 0

GS

10

f = 1 MHz

5

0.2 1 5

0.1

0.5 10

Drain to Source Voltage V

Coss

Ciss

Crss

2

DS

(V)

500

t

f

200

Switching Time t (ns)

100

50

0.1 0.5 2

0.05

0.2 5

Drain Current I

t

r

t

d (on)

1

D

(A)

6

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

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