Datasheet 2SK1573 Datasheet (HIT)

2SK1573

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SK1573

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

600 V
±30 V
15 A
60 A
15 A
125 W

2

2SK1573

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 9 14 — S ID = 8 A, VDS = 10 V *
Input capacitance Ciss — 3150 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 700 — pF f = 1 MHz
Reverse transfer capacitance Crss — 90 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse test

600 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 500 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.35 0.50 Ω ID = 8 A, VGS = 10 V *

— 35 — ns ID = 8 A, VGS = 10 V,
— 105 — ns RL = 3.75 Ω
— 250 — ns
—90—ns
— 1.0 — V IF = 15 A, VGS = 0

— 680 — ns IF = 15 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1573

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Transfer Characteristics

20

10 V 8 V

5 V

16

(A)

D

12

Pulse Test

100

Maximum Safe Operation Area

30

(A)

10

D

Operation in this area

is limited by R

3

1

Drain Current I

0.3
Ta = 25°C

0.1

1

3 1,00030010010 30

Drain to Source Voltage V

Typical Transfer Characteristics

20

V

= 10 V

DS

Pulse Test

16

(A)

D

12

PW = 10 ms (1 Shot Pulse)

DS (on)

100 µs

1 ms

DC Operation (T

C

= 25°C)

DS

10 µs

(V)

8

Drain Current I

4

412160

820

Drain to Source Voltage VDS (V)

4.5 V

V

GS

= 4 V

8

Ta = 75°C

Drain Current I

25°C

4

–25°C

2680

Drain to Source Voltage V

410

(V)

GS

4

2SK1573

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

10

DS (on)

Pulse Test

ID = 20 A

8

6

4

2

2680

Drain to Source Saturation Voltage V

410

Gate to Source Voltage V

10 A

5 A

GS

Static Drain to Source on State

Resistance vs. Temperature

2.0
Pulse Test

= 10 V

V

GS

1.6

(V)

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

1

(Ω)

0.5

DS (on)

R

V

GS

= 10, 15 V

0.2

0.1

0.05

Static Drain to Source on State Resistance

1

2 5 10 20 50

Drain Current I

D

(A)

Forward Transfer Admittance

vs. Drain Current

50

VDS = 10 V
Pulse Test

20

TC = –25°C

100

1.2

(Ω)

DS (on)

0.8

R

ID = 20 A

0.4

0

Static Drain to Source on State Resistance

–40

0 80 120

40 160

Case Temperature TC (°C)

10 A

5 A

10

Forward Transfer Admittance yfs (S)

0.5

5

2

1

0.2

0.5 1 2 5 10
Drain Current I

D

(A)

25°C
75°C

20

5

2SK1573

Body to Drain Diode Reverse

Recovery Time

5,000

(ns)

2,000

rr

1,000

500

200

100

Reverse Recovery Time t

di/dt = 100 A/µs, Ta = 25°C
V

= 0

GS

Pulse Test

50

0.5

12 51020

Reverse Drain Current I

Dynamic Input Characteristics

1,000

(V)

DS

800

VDD = 100 V

250 V
400 V

600

V

DS

400

200

Drain to Source Voltage V

VDD = 400 V
250 V
100 V

40 120 1600

80 200

Gate Charge Qg (nc)

V

GS

(A)

DR

ID = 15 A

10,000

1,000

100

Capacitance C (pF)

50

20

16

12

(V)

GS

500

200

100

50

8

20

4

Switching Time t (ns)

Gate to Source Voltage V

10

0

Typical Capacitance vs.
Drain to Source Voltage

Ciss

Coss

VGS = 0
f = 1 MHz

10

0

10 30 40

Drain to Source Voltage V

Crss

20 50

(V)

DS

Switching Characteristics

t

d (off)

t

t

f

t

d (on)

r

V

= 10 V, PW = 2 µs

GS

duty < 1% V

= 30 V

DD

•

•

5

0.5

1510220

Drain Current I

D

(A)

50

6

Reverse Drain Current vs.

Source to Drain Voltage

20

Pulse Test

16

(A)

DR

12

8

V

= 10 V

GS

4

Reverse Drain Current I

0.8 2.0

0

0.4 1.2 1.6

Source to Drain Voltage V

0, –5 V

SD

2SK1573

(V)

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

0.01

10 µ

Normalized Transient Thermal Impedance vs. Pulse Width

D = 1

0.5

0.2

0.1

0.05

0.02

1 Shot Pulse

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit

Vin Monitor

D.U.T

50 Ω

Vin
10 V

Pulse Width PW (s)

Vout Monitor

R

L

V

DD

.

=

30 V

.

Vin

Vout

t

d (on)

θch–c (t) = γ
θch–c = 1.0°C/W, T

P

Waveforms

10%

10%

90% 90%

t

r

DM

td

(off)

S

PW

T

(t) · θch–c

= 25°C

C

90%

10%

t

D =

f

PW

T

7

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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