Datasheet 2SK1527, 2SK1526 Datasheet (HIT)

2SK1526, 2SK1527

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

TO-3PL

G

D

1

2

3

1. Gate

2. Drain

S

3. Source

2SK1526, 2SK1527

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1526 V

DSS

2SK1527 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

450 V

±30 V
40 A
160 A
40 A
250 W

2

2SK1526, 2SK1527

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1526 V

(BR)DSS

breakdown voltage 2SK1527 500
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage 2SK1526 I

GSS

DSS

drain current 2SK1527 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1526 R

GS(off)

DS(on)

on state resistance 2SK1527 — 0.12 0.16
Forward transfer admittance |yfs| 20 30 — S ID = 20 A, VDS = 10 V *
Input capacitance Ciss — 5800 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1430 — pF f = 1 MHz
Reverse transfer capacitance Crss — 150 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

450 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.11 0.15 Ω ID = 20 A, VGS = 10 V *

— 60 — ns ID = 20 A, VGS = 10 V,
— 175 — ns RL = 1.5 Ω
— 420 — ns
— 160 — ns
— 1.2 — V IF = 40 A, VGS = 0

— 600 — ns IF = 40 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1526, 2SK1527

300

Power vs. Temperature Derating

200

100

Channel Dissipation Pch (W)

0 50 100 150

Ambient Temperature Ta (°C)

Typical Output Characteristics

50

10 V

6 V

Pulse Test

5 V

40

(A)

D

30

1,000

Maximum Safe Operation Area

300
100

(A)

D

30

Operation in this area

is limited by R

DS (on)

PW = 10 ms (1 Shot)

DC Operation (T

10

3

Drain Current I

1

0.3

Ta = 25°C

0.1
1 3 30 300

10 100 1,000

Drain to Source Voltage V

Typical Transfer Characteristics

50

V

= 10 V

DS

Pulse Test

40

(A)

D

30

10 µs

100 µs

1 ms

C

= 25°C)

2SK1526
2SK1527

DS

(V)

20

Drain Current I

10

0

41216

Drain to Source Voltage V

4.5 V
20

V

= 4 V

GS

820

(V)

DS

Drain Current I

10

0

Ta = 75°C

25°C

–25°C

268

4

Gate to Source Voltage V

GS

(V)

10

4

2SK1526, 2SK1527

Drain to Source Saturation Voltage

(V)

10

DS (on)

8

vs. Gate to Source Voltage

Pulse Test

6

4

2

2680

Drain to Source Saturation Voltage V

410

Gate to Source Voltage V

Static Drain to Source on State

Resistance vs. Temperature

0.5

V

= 10 V

GS

0.4

Pulse Test

ID = 50 A

0.3

(Ω)

DS (on)

0.2

R

ID = 50 A

20 A
10 A

(V)

GS

20 A

10 A

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

1

(Ω)

0.5

DS (on)

R

0.2
V

= 10 V, 15 V

GS

0.1

0.05

Static Drain to Source on State Resistance

5 20 1002

10 200

Drain Current I

D

50

(A)

Forward Transfer Admittance

vs. Drain Current

100

V

= 10 V

DS

50

Pulse Test

20

10

TC = –25°C

25°C

75°C

5

0.1

0

Static Drain to Source on State Resistance

–40

0 80 120

40 160

Case Temperature T

(°C)

C

2

Forward Transfer Admittance yfs (S)

1

0.5 2 10

150

Drain Current I

520

(A)

D

5

2SK1526, 2SK1527

Body to Drain Diode Reverse

Recovery Time

5,000

di/dt = 100 A/µs, VGS = 0

(ns)

2,000

rr

Pulse Test

1,000

500

200

100

Reverse Recovery Time t

50

220505

1

Reverse Drain Current I

Dynamic Input Characteristics

1,000

VDD = 100 V

(V)

DS

800

250 V
400 V

600

V

DS

400

200

Drain to Source Voltage V

0

VDD = 400 V

250 V
100 V

80 2400 320

160 400

Gate Charge Qg (nc)

Typical Capacitance vs.
Drain to Source Voltage

10,000

1,000

Ciss

Coss

100

Capacitance C (pF)

Crss

DS

(V)

10

DR

(A)

100

V

= 0

GS

f = 1 MHz

10

0

10 30 40

Drain to Source Voltage V

20 50

Switching Characteristics

20

ID = 30 A

V

GS

16

12

8

4

0

1,000

(V)

GS

500

200

t

100

r

50

Switching Time t (ns)

VGS = 10 V, PW = 2 µs

20

Gate to Source Voltage V

duty < 1%, V

10

0.5

1520

t

d (off)

t

f

t

d (on)

.

=

30 V

.

DD

250

Drain Current I

10

D

(A)

6

(A)

DR

2SK1526, 2SK1527

Reverse Drain Current vs.

Sourse to Drain Voltage

50

Pulse Test

40

30

20

(t)

S

Normalized Transient Thermal Impedance γ

3

1

0.3

0.1

0.03

0.01
10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

10

Reverse Drain Current I

0

0

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

10 V

VGS = 0, –5 V

0.4 0.8 1.6

1.2

Source to Drain Voltage V

Pulse Width PW (s)

SD

(V)

2.0

θch–c (t) = γ
θch–c = 0.5°C/W, T

T

°C/W

PW

P

DM

T

C

(t) · θch–c

S

= 25°C

= 25°C

C

D =

PW

T

Switching Time Test Circuit

Vin Monitor

D.U.T

50 Ω

Vin
10 V

Vout Monitor

R

L

V

DD

.

=

30 V

.

t

d (on)

Vin

Vout

10%

10%

Waveforms

90%

t

r

t

d (off)

90%

90%

10%

t

f

7

Unit: mm

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

5.45 ± 0.5

20.0 ± 0.3
φ3.3 ± 0.2

1.4

3.0

2.2

+0.25

1.2

–0.1

5.45 ± 0.5

1.0

3.8

7.4

0.6

+0.25
–0.1

5.0 ± 0.2

2.8 ± 0.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-3PL
—
—

9.9 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

For further information write to:

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX