Datasheet 2SK1522, 2SK1521 Datasheet (HIT)

2SK1521, 2SK1522

Silicon N-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• Built-in fast recovery diode (trr = 120 ns)

• Suitable for motor control, switching regulator, DC-DC converter

Outline

TO-3PL

G

D

1

2

3

1. Gate

2. Drain

S

3. Source

2SK1521, 2SK1522

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1521 V

DSS

2SK1522 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

450 V

±30 V
50 A
200 A
50 A
250 W

2

2SK1521, 2SK1522

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1521 V

(BR)DSS

breakdown voltage 2SK1522 500
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage 2SK1521 I

GSS

DSS

drain current 2SK1522 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1521 R

GS(off)

DS(on)

on state resistance 2SK1522 — 0.085 0.11
Forward transfer admittance |yfs| 22 35 — S ID = 25 A, VDS = 10 V *
Input capacitance Ciss — 8700 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 2400 — pF f = 1 MHz
Reverse transfer capacitance Crss — 235 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

450 — — V ID = 10 mA, VGS = 0

±30——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0

2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.08 0.10 Ω ID = 25 A, VGS = 10 V *

— 85 — ns ID = 25 A, VGS = 10 V,
— 250 — ns RL = 1.2 Ω
— 600 — ns
— 250 — ns
— 1.1 — V IF = 50 A, VGS = 0

— 120 — ns IF = 50 A, VGS = 0,

di

/dt = 100 A/µs

F

1

1

3

2SK1521, 2SK1522

Power vs. Temperature Derating

300

200

100

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature TC (°C)

Typical Output Characteristics

100

(A)

D

80

60

Pulse Test

8 V

10 V

6 V

5.5 V

1,000

Maximum Safe Operation Area

300
100

(A)

D

Operation in this area

30

is limited by R

10

3

Drain Current I

1

0.3
Ta = 25°C

0.1

1

3 10 30 100 300

Drain to Source Voltage V

Typical Transfer Characteristics

100

V

DS

Pulse Test

80

(A)

D

60

DS (on)

PW = 10 ms (1 Shot)

DC Operation (T

= 20 V

100 µs

1 ms

C

= 25°C)

2SK1521
2SK1522

10 µs

DS

1,000

(V)

40

Drain Current I

20

Drain to Source Voltage V

5 V

4.5 V

V

= 4 V

GS

412160

820

(V)

DS

40

Drain Current I

20

TC = 75°C

Gate to Source Voltage V

25°C
–25°C

2680

410

(V)

GS

4

2SK1521, 2SK1522

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

5

DS (on)

4

50 A

Pulse Test

3

2

1

412160

Drain to Source Saturation Voltage V

820

20 A

ID = 10 A

Gate to Source Voltage VGS (V)

Static Drain to Source on State

Resistance vs. Temperature

0.5
Pulse Test

0.4

0.3

(Ω)

DS (on)

0.2

R

0.1

0

Static Drain to Source on State Resistance

–40

Case Temperature T

ID = 50 A

10 A

0 80 120

40 160

(°C)

C

20 A

Static Drain to Source on State

Resistance vs. Drain Current

1

Pulse Test

0.5

0.2

(Ω)

0.1

DS (on)

R

0.05

V

GS

= 10, 15 V

0.02

0.01

Static Drain to Source on State Resistance

5

10 20 50 100 200

Drain Current I

D

(A)

Forward Transfer Admittance

vs. Drain Current

50

20

TC = –25°C

10

5

2

VDS = 20 V

1

Pulse Test

Forward Transfer Admittance yfs (S)

0.5

0.5 1 2 5 10 20
Drain Current I

D

(A)

500

25°C
75°C

50

5

2SK1521, 2SK1522

Body to Drain Diode Reverse

Recovery Time

500

(ns)

200

rr

100

50

di/dt = 100 A/µs, Ta = 25°C

20

V

= 0

GS

Pulse Test

10

Reverse Recovery Time t

5

0.5

12 51020

Reverse Drain Current I

Dynamic Input Characteristics

500

(V)

400

DS

VDD = 100 V

250 V
400 V

300

V

DS

200

100

Drain to Source Voltage V

VDD = 400 V
250 V
100 V

80 240 3200

160 400

Gate Charge Qg (nc)

(A)

DR

V

GS

ID = 50 A

10,000

1,000

Capacitance C (pF)

50

20

16

12

(V)

GS

5,000

2,000

1,000

8

4

Switching Time t (ns)

Gate to Source Voltage V

0

100

500

200

100

50

Typical Capacitance vs.
Drain to Source Voltage

VGS = 0
f = 1 MHz

10

0

10 30 40

Drain to Source Voltage V

Switching Characteristics

V
PW = 2 µs, duty < 1%

t

f

t

r

0.5

1510220

Drain Current I

Ciss

Coss

Crss

20 50

(V)

DS

= 10 V, V

GS

t

d (off)

DD

t

d (on)

=

.

.

30 V

50

(A)

D

6

Reverse Drain Current vs.

Source to Drain Voltage

100

Pulse Test

80

(A)

DR

60

40

V

= 0, –5 V

GS

20

Reverse Drain Current I

0.8 2.0

0

0.4 1.2 1.6

Source to Drain Voltage V

10 V

SD

2SK1521, 2SK1522

(V)

(t)

S

Normalized Transient Thermal Impedance γ

0.3

0.1

0.03

0.01

3

D = 1

1

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

10 µ

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
10 V

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γ
θch–c = 0.5°C/W, T

P

DM

Pulse Width PW (s)

Waveforms

Vout Monitor

D.U.T

R

L

V

DD

.

=

30 V

.

Vin

Vout

t

d (on)

10%

10%

90% 90%

t

r

(t) · θch–c

S

PW

T

td

(off)

TC = 25°C

= 25°C

C

D =

90%

PW

10%

t

f

T

7

Unit: mm

6.0 ± 0.2

26.0 ± 0.3

20.0 ± 0.6

2.5 ± 0.3

5.45 ± 0.5

20.0 ± 0.3
φ3.3 ± 0.2

1.4

3.0

2.2

+0.25

1.2

–0.1

5.45 ± 0.5

1.0

3.8

7.4

0.6

+0.25
–0.1

5.0 ± 0.2

2.8 ± 0.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-3PL
—
—

9.9 g

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