Page 1
2SK1519, 2SK1520
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 120 ns)
• Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3PL
G
D
1
2
3
1. Gate
2. Drain
S
3. Source
Page 2
2SK1519, 2SK1520
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1519 V
DSS
2SK1520 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
450 V
±30 V
30 A
120 A
30 A
200 W
2
Page 3
2SK1519, 2SK1520
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1519 V
(BR)DSS
breakdown voltage 2SK1520 500
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage 2SK1519 I
GSS
DSS
drain current 2SK1520 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1519 R
GS(off)
DS(on)
on state resistance 2SK1520 — 0.12 0.16
Forward transfer admittance |yfs| 15 25 — S ID = 15 A, VDS = 10 V *
Input capacitance Ciss — 5800 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 1550 — pF f = 1 MHz
Reverse transfer capacitance Crss — 170 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
450 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.11 0.15 Ω ID = 15 A, VGS = 10 V *
— 65 — ns ID = 15 A, VGS = 10 V,
— 170 — ns RL = 2 Ω
— 415 — ns
— 200 — ns
— 1.1 — V IF = 30 A, VGS = 0
— 120 — ns IF = 30 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
Page 4
2SK1519, 2SK1520
300
Power vs. Temperature Derating
200
100
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
50
6 V
10 V
Pulse Test
5 V
40
(A)
D
30
1,000
Maximum Safe Operation Area
300
100
(A)
D
30
Operation in this area
is limited by R
10
DS (on)
PW = 10 ms (1 Shot)
DC Operation (T
3
Drain Current I
1
0.3
Ta = 25°C
0.1
1 3 30 300
10 100 1,000
Drain to Source Voltage V
Typical Transfer Characteristics
50
V
= 10 V
DS
Pulse Test
40
(A)
D
30
10 µs
100 µs
1 ms
C
= 25°C)
2SK1519
2SK1520
DS
(V)
20
Drain Current I
10
0
4
Drain to Source Voltage V
4.5 V
20
V
= 4 V
GS
12
DS
16
(V)
820
Drain Current I
10
0
TC = 75°C
25°C
–25°C
268
4
Gate to Source Voltage V
GS
(V)
10
4
Page 5
2SK1519, 2SK1520
Drain to Source Saturation Voltage
(V)
10
DS (on)
8
vs. Gate to Source Voltage
Pulse Test
ID = 50 A
6
4
20 A
2
2680
Drain to Source Saturation Voltage V
410
10 A
Gate to Source Voltage V
Static Drain to Source on State
Resistance vs. Temperature
0.5
V
= 10 V
GS
0.4
Pulse Test
0.3
(Ω)
DS (on)
0.2
R
(V)
GS
ID = 50 A
10 A
20 A
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
(Ω)
0.5
DS (on)
R
0.2
V
= 10 V, 15 V
0.1
0.05
Static Drain to Source on State Resistance
GS
5 20 1002
10
Drain Current I
D
50
(A)
Forward Transfer Admittance
vs. Drain Current
100
V
= 10 V
DS
50
Pulse Test
20
10
TC = –25°C
25°C
75°C
5
200
0.1
0
Static Drain to Source on State Resistance
–40
0 80 120
40 160
Case Temperature T
(°C)
C
2
Forward Transfer Admittance yfs (S)
1
0.5 2 10
150
Drain Current I
520
(A)
D
5
Page 6
2SK1519, 2SK1520
Body to Drain Diode Reverse
Recovery Time
1,000
di/dt = 100 A/µs, VGS = 0
500
(ns)
Pulse Test
rr
200
100
50
20
Reverse Recovery Time t
10
0.5 2 20 505
1
Reverse Drain Current I
Dynamic Input Characteristics
1,000
800
VDD = 100 V
250 V
400 V
(V)
DS
600
V
DS
400
200
Drain to Source Voltage V
0
VDD = 400 V
250 V
100 V
80 2400 320
160 400
Gate Charge Qg (nc)
V
GS
10
DR
ID = 30 A
Pulse Test
(A)
10,000
1,000
100
Capacitance C (pF)
10
(V)
GS
1,000
500
20
16
200
12
100
8
4
Gate to Source Voltage V
0
50
Switching Time t (ns)
20
10
0.5
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
V
= 0
GS
f = 1 MHz
20 50
10 30 40
0
Drain to Source Voltage V
DS
Switching Characteristics
t
d (off)
t
f
t
r
t
d (on)
VGS = 10 V, PW = 2 µs
duty < 1%, V
1520
.
=
30 V
.
DD
250
Drain Current I
10
D
(A)
(V)
6
Page 7
(A)
DR
2SK1519, 2SK1520
Reverse Drain Current vs.
Sourse to Drain Voltage
50
Pulse Test
40
30
(t)
S
Normalized Transient Thermal Impedance γ
3
1
0.3
0.1
0.03
0.01
10 µ
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
20
VGS = 0, –5 V
10
Reverse Dratin Current I
0
0
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ 10 m 100 m 1 101 m
10 V
0.4 0.8 1.6
1.2
Source to Drain Voltage V
Pulse Width PW (s)
SD
(V)
2.0
θch–c (t) = γ
θch–c = 0.625°C/W, T
P
DM
S
PW
T
T
= 25°C
C
(t) · θch–c
D =
= 25°C
C
PW
T
Switching Time Test Circuit
Vin Monitor
D.U.T
50 Ω
Vin
10 V
Vout Monitor
R
L
V
DD
.
=
30 V
.
t
d (on)
Vin
Vout
10%
10%
Waveforms
90%
t
r
t
d (off)
90%
90%
10%
t
f
7
Page 8
Unit: mm
6.0 ± 0.2
26.0 ± 0.3
20.0 ± 0.6
2.5 ± 0.3
5.45 ± 0.5
20.0 ± 0.3
φ3.3 ± 0.2
1.4
3.0
2.2
+0.25
1.2
–0.1
5.45 ± 0.5
1.0
3.8
7.4
0.6
+0.25
–0.1
5.0 ± 0.2
2.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
(reference value)
Weight
TO-3PL
—
—
9.9 g
Page 9
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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