Page 1
2SK1515, 2SK1516
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 120 ns)
• Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3P
G
D
1
2
3
1. Gate
2. Drain
S
(Flange)
3. Source
Page 2
2SK1515, 2SK1516
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SK1515 V
DSS
2SK1516 500
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T
= 25°C
C
450 V
±30 V
10 A
30 A
10 A
100 W
2
Page 3
2SK1515, 2SK1516
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1515 V
(BR)DSS
breakdown voltage 2SK1516 500
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage 2SK1515 I
GSS
DSS
drain current 2SK1516 VDS = 400 V, VGS = 0
Gate to source cutoff voltage V
Static Drain to source 2SK1515 R
GS(off)
DS(on)
on state resistance 2SK1516 — 0.7 0.9
Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A, VDS = 10 V *
Input capacitance Ciss — 1100 — pF VDS = 10 V, VGS = 0,
Output capacitance Coss — 310 — pF f = 1 MHz
Reverse transfer capacitance Crss — 50 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward
V
d(on)
r
d(off)
f
DF
voltage
Body to drain diode reverse
t
rr
recovery time
Note: 1. Pulse test
450 — — V ID = 10 mA, VGS = 0
±30——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±25 V, VDS = 0
— — 250 µAVDS = 360 V, VGS = 0
2.0 — 3.0 V ID = 1 mA, VDS = 10 V
— 0.6 0.8 Ω ID = 5 A, VGS = 10 V *
— 15 — ns ID = 5 A, VGS = 10 V,
— 65 — ns RL = 6 Ω
—95—ns
—55—ns
— 1.0 — V IF = 10 A, VGS = 0
— 120 — ns IF = 10 A, VGS = 0,
di
/dt = 100 A/µs
F
1
1
3
Page 4
2SK1515, 2SK1516
Power vs. Temperature Derating
120
80
40
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
20
10 V
(A)
D
7 V
16
12
6 V
Pulse Test
Maximum Safe Operation Area
50
20
10
(A)
5
D
Operation in this area
is limited by R
2
1
0.5
Drain Current I
0.2
Ta = 25°C
0.1
0.05
1
3 10 30 100 300 1,000
Drain to Source Voltage V
Typical Transfer Characteristics
20
VDS = 20 V
Pulse Test
16
(A)
D
12
1 ms
C
= 25°C)
100 µs
PW = 10 ms (1 shot pulse)
DS (on)
DC Operation (T
2SK1515
2SK1516
–25°C
Ta = 25°C
10 µs
DS
75°C
(V)
8
Drain Current I
4
10 30 400
Drain to Source Voltage V
5 V
VGS = 4 V
20 50
(V)
DS
8
Drain Current I
4
2680
Gate to Source Voltage V
410
(V)
GS
4
Page 5
2SK1515, 2SK1516
Drain to Source Saturation Voltage
(V)
10
vs. Gate to Source Voltage
Pulse Test
DS (on)
8
10 A
6
4
2
820
Drain to Source Saturation Voltage V
412160
5 A
ID = 2 A
Gate to Source Voltage V
Static Drain to Source on State
Resistance vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6
1.2
(Ω)
DS (on)
0.8
R
ID = 10 A
0.4
GS
2, 5 A
(V)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1
(Ω)
0.5
DS (on)
R
0.2
0.1
0.05
Static Drain to Source on State Resistance
0.5 2 5 20 50
1
Drain Current I
10
D
(A)
Forward Transfer Admittance
vs. Drain Current
50
V
= 20 V
DS
Pulse Test
20
10
TC = –25°C
25°C
75°C
5
2
1
15 V
0
Static Drain to Source on State Resistance
–40
Case Temperature T
40 160
0 80 120
(°C)
C
Forward Transfer Admittance yfs (S)
0.5
0.1 1
0.2 10
0.5 5
Drain Current I
2
D
(A)
5
Page 6
2SK1515, 2SK1516
Body to Drain Diode Reverse
Recovery Time
5,000
di/dt = 100 A/µs, Ta = 25°C
V
2,000
(ns)
rr
= 0
GS
Pulse Test
1,000
500
200
100
Reverse Recovery Time t
50
0.5 10
150.2
Reverse Drain Current I
Dynamic Input Characteristics
500
(V)
400
DS
V
DS
V
300
200
100
Drain to Source Voltage V
0
VDD = 400 V
250 V
100 V
82432
16 40
Gate Charge Qg (nc)
2
= 100 V
DD
250 V
400 V
(A)
DR
V
GS
ID = 7 A
5,000
1,000
100
Capacitance C (pF)
20
20
16
(V)
GS
500
200
100
12
8
Switching Time t (ns)
4
Gate to Source Voltage V
0
Typical Capacitance vs.
Drain to Source Voltage
10
5
0
10 30 40
Drain to Source Voltage V
Switching Characteristics
V
= 10 V VDD = 30 V
GS
PW = 2 µs, duty < 1%
50
20
t
f
t
r
10
5
0.50.2 1
Drain Current ID (A)
V
= 0
GS
f = 1 MHz
Ciss
Coss
Crss
20 50
(V)
DS
•
•
t
d (off)
t
d (on)
210520
6
Page 7
(A)
DR
2SK1515, 2SK1516
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
(t)
S
Normalized Transient Thermal Impedance γ
1.0
0.3
0.1
0.03
0.01
3
10 µ
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
8
15 V
10 V
4
Reverse Drain Current I
V
= 0, –10 V
GS
0.8 2.0
0
0.4 1.2 1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ 10 m 100 m 1 101 m
Pulse Width PW (s)
TC = 25°C
θch–c (t) = γS (t) · θch–c
θch–c = 1.25°C/W, T
P
DM
PW
T
C
= 25°C
PW
D =
T
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50 Ω
D.U.T.
Vout Monitor
R
L
V
DD
.
=
30 V
.
Vin
Vout
t
d (on)
Waveforms
10%
10%
90% 90%
t
r
90%
10%
td
(off)
t
f
7
Page 8
1.6
0.5
15.6 ± 0.3
φ3.2 ± 0.2
1.0
2.0
Unit: mm
4.8 ± 0.2
1.5
5.0 ± 0.3
19.9 ± 0.2
14.9 ± 0.2
0.3
1.4 Max
3.6
2.0
0.9
1.0
1.0 ± 0.2
5.45 ± 0.55.45 ± 0.5
18.0 ± 0.5
2.8
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-3P
—
Conforms
5.0 g
Page 9
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